Texas Instruments Corporation

Texas Instruments Incorporated Deutschland, Gmbh

Swaminathan Sankaran

Baher S Haroun

Bradley Allen Kramer

Benjamin Stassen Cook

Mark William Morgan

Juan Alejandro Herbsommer

Hassan Omar Ali

Siraj Akhtar

Sachin Kalia

Tolga Dinc

Nirmal Chindhu Warke

Gerd Schuppener

Bichoy Bahr

Salvatore Luciano Finocchiaro

Timothy M Schmidl

Adam Joseph Fruehling

Tobias Bernhard Fritz

Lutz Albrecht Naumann

Nathan Brooks

Anand Ganesh Dabak

Srinath Mathur Ramaswamy

Anant Shankar Kamath

Gianpaolo Lisi

Kumar Anurag Shrivastava

Keith Edmund Kunz

Gerard G Socci

Russell Carlton McMullan

Subramanian Jagdish Narayan

Brad Kramer

Binu Kamblath Pushkarakshan

Tolga Dine

Sudipto Chakraborty

Brian Paul Ginsburg

Thomas Dyer Bonifield

Robert Floyd Payne

Gregory Eric Howard

Ralf Peter Brederlow

Ali Djabbari

Mikhail Valeryevich Ivanov

Venkatesh Srinivasan

Eunyoung Seok

Vijaya Bhaskar Rentala

Rajaram Subramonian

Kishalay Datta

Bharadvaj Bhamidipati

Mahmoud Abdelmoneim Abdelmoneim Elgenedy

Klaas De Haan

Srinath Hosur

Marco Corsi

Michael Henderson Perrott

Anindya Poddar

Vikas I Gupta

Per Torstein Roine

Ernst Georg Muellner

Argyrios Dellis

Mark Edward Wentroble

Vijay B Rentala

Vijaylaxmi Gumaste Khanolkar

Martin J Izzard

Suvadip Banerjee

Franck Seigneret

Rakesh Hariharan

Rajaram Subramoniam

Dibyajat Mishra

Athena Lin

Rr Manikandan

Sanjay Mohan

Richard George Wallace

Udit Rawat

Ashwin Raghunathan

Seyed Miaad Seyed Aliroteh

Gurumurti Kailaschandra Avhad

Ernst Gerog Muellner

An example apparatus includes a first transformer winding having a first proximal end and a first distal end and a second transformer winding having a second proximal end and a second distal end, the first proximal end having a first distance from the second proximal end and the first distal end having a second distance from the second distal end, the first distance less than the second distance.

Methods and apparatus for power amplifier transformers

In a described example, an apparatus includes: a semiconductor device mounted to a device side surface of a package substrate, the package substrate having a board side surface opposite the device side surface; an antenna module mounted to the package substrate and coupled to the semiconductor device; and mold compound covering the semiconductor device and a portion of the package substrate.

Microelectronic device package with integral antenna module and semiconductor device

An apparatus includes a controller having differential modulation control outputs and is configured to provide differential modulation signals having a particular frequency at the differential modulation control outputs. A differential modulator circuit is coupled between first differential terminals and second differential terminals. The differential modulator circuit has differential modulation control inputs coupled to the differential modulation control outputs. The differential modulator circuit is configured to: modulate first differential signals at the first differential terminals with the differential modulation signals having the particular frequency, provide the modulated first differential signals at the second differential terminals, modulate second differential signals at the second differential terminals with the differential modulation signals having the particular frequency, and provide the modulated second differential signals at the first differential terminals.

Bidirectional data transmission over isolation medium

An oscillator circuit includes a first BAW oscillator, a first coupling stage, a second BAW oscillator, and a second coupling stage. The first BAW oscillator is configured to generate a first output signal at a frequency. The first coupling stage is coupled to the first BAW oscillator, and is configured to amplify the first output signal. The second BAW oscillator is coupled to the first coupling stage, and is configured to generate a second output signal at the frequency. The second output signal differs in phase from the first output signal. The second coupling stage is coupled to the first BAW oscillator and the second BAW oscillator, and is configured to amplify the second output signal and drive the first BAW oscillator.

Multi-phase oscillators

Described embodiments include a circuit having a quadrature phase generator circuit having differential generator inputs, in-phase differential generator outputs and quadrature-phase differential generator outputs. A first frequency multiplier circuit has first differential multiplier inputs and a first multiplier output, wherein the first differential multiplier inputs are coupled to the in-phase differential generator outputs. A second frequency multiplier circuit has second differential multiplier inputs and a second multiplier output. The second multiplier differential inputs are coupled to the quadrature-phase differential generator outputs. A transformer includes a primary inductor and a secondary inductor, wherein the primary inductor is coupled between the first and second multiplier outputs, and the second inductor is coupled between an output voltage terminal and a ground terminal.

Broadband frequency multiplier with harmonic suppression

In an example apparatus, a first transistor has a base terminal, a first current terminal and a second current terminal. The base terminal is coupled to an input voltage node. A second transistor has a control terminal, a third current terminal and a fourth current terminal. The third current terminal is coupled to the second current terminal. The fourth current terminal is coupled to a first resistor. A second resistor is coupled to the control terminal. An inductor is coupled between the first resistor and a ground terminal.

Methods and apparatus for voltage buffering

An electronic device has a substrate and first and second metallization levels with a resonant circuit. The first metallization level has a first dielectric layer on a side of the substrate, and a first metal layer on the first dielectric layer. The second metallization level has a second dielectric layer on the first dielectric layer and the first metal layer, and a second metal layer on the second dielectric layer. The electronic device includes a first plate in the first metal layer, and a second plate spaced apart from the first plate in the second metal layer to form a capacitor. The electronic device includes a winding in one of the first or second metal layers and coupled to one of the first or second plates in a resonant circuit.

Resonant inductive-capacitive isolated data channel

An oscillator circuit includes a bulk acoustic wave resonator, a differential active inductor circuit, and a gain circuit. The differential active inductor circuit is configured to bias the bulk acoustic wave resonator. The differential active inductor circuit is coupled between the bulk acoustic wave resonator and a power supply terminal. The gain circuit is coupled to the bulk acoustic wave resonator.

Oscillator with active inductor

An example apparatus includes: an on-off keying (OOK) modulator including: a first transistor including a first control terminal; a second transistor including a first current terminal, a second current terminal, and a second control terminal, the first current terminal coupled to the first control terminal; a third transistor including a third current terminal, a fourth current terminal, and a third control terminal, the third current terminal coupled to the first control terminal; a fourth transistor including a fifth current terminal, the fifth current terminal coupled to the second current terminal; and a fifth transistor including a sixth current terminal, the sixth current terminal coupled to the fourth current terminal.

Methods and apparatus to reduce variations for on-off keying transmissions

An example apparatus includes: a compensation circuit including: a current compensation output, a first transistor with a first current terminal and a first control terminal, the first current terminal coupled to the current compensation output, and a resistor ladder with a tap terminal coupled to the first control terminal, a current mirror circuit having a mirror input and a mirror output, the mirror input coupled to the current compensation output, and a rectification circuit having an input coupled to the mirror output.

Methods and apparatus to implement compensation circuitry in an envelope detector

An interposer acts as a buffer zone between a transceiver IC and a dielectric waveguide interconnect and establishes two well-defined reference planes that can be optimized independently. The interposer includes a block of material having: a first interface region to interface with an antenna coupled to an integrated circuit (IC); and a second interface region to interface to the dielectric waveguide. An interface waveguide is formed by a defined region positioned within the block of material between the first interface region and the second interface region.

Interposer between an integrated circuit antenna interface and an external waveguide interface including an internal waveguide coupled between these interfaces

In described examples of a signal equalizer, a first filter stage is configured to perform adaptive equalization of crosstalk between a first signal component and a second signal component of a complex signal. A second filter stage is coupled serially to the first filter stage. The second equalizer stage is configured to perform separate adaptive equalization of the first signal component and separate adaptive equalization of the second signal component.

Decomposed real-imaginary equalizer

In an example, a system includes a BAW resonator. The system also includes a first heater configured to heat the BAW resonator, where the first heater is controlled by a first control loop. The system includes a circuit coupled to the BAW resonator. The system also includes a second heater configured to heat the circuit, where the second heater is controlled by a second control loop.

Oven controlled MEMS oscillator with multiple temperature control loops

A system includes a first differential amplifier and a first transformer with a primary coil coupled to an output of the first differential amplifier and with a secondary coil coupled to a load. The system also includes a second differential amplifier and a second transformer with a primary coil coupled to an output of the second differential amplifier and with a secondary coil coupled in series with the secondary coil of the first transformer. The system also includes a tuning network coupled to a center tap node between the secondary coil of the first transformer and the secondary coil of the second transformer.

Power amplifier with series transformer combiners and harmonic tuning

An antenna integrated in a device package is formed such that at least a portion of the antenna is elevated with respect to a substrate of the device package. The entire antenna and its functionality are positioned within a space extending vertically upwardly from a footprint of the substrate that contains circuitry of the device. The boundary of the space is defined by the perimeter of an over mold positioned on the substrate and encapsulating the circuitry.

Compact high-performance device-integrated antennas

Growing community of inventors

Allen, TX, United States of America

Swaminathan Sankaran