Qorvo Us, Inc.

Rf Micro Devices, Inc.

Swaminathan Muthukrishnan

Nathaniel Peachey

Christian Rye Iversen

Walter Anthony Wohlmuth

Cody Hale

Jason Yuxin Li

Randy Naylor

Peng Cheng

David Antopolsky

Ralph Williamson

Jeremiah J Smith

Nicholas Liu

David Robbins

Nancy Schaefer

Aspects disclosed herein include electrostatic discharge (ESD) protection in an electronic switching circuit. An electronic switching circuit includes switching circuitry configured to provide interconnectivity between a common port in at least one common branch and an input/output (I/O) port in at least one I/O branch. The common branch and the I/O branch each include a blocking capacitor element that is inherently incapable for ESD discharging. As such, an ESD clamp is disposed in parallel to the blocking capacitor element to provide a low-impedance ESD discharging path around the blocking capacitor element. By disposing the ESD clamp in parallel to the blocking capacitor element, it is possible to minimize detrimental parasitic effects of the ESD clamp, thus improving performance and reliability of the electronic switching circuit, especially for high power switching circuits such as a radio frequency (RF) switching circuits.

Electrostatic discharge (ESD) protection in an electronic switching circuit

Voltage regulator circuitry includes a first gain stage, a second gain stage, and a feedback stage. Feedback is provided between the feedback stage, the second gain stage, and the first gain stage in order to tightly regulate an output voltage of the voltage regulator circuitry such that the output voltage is independent of process variations present in the devices therein. The voltage regulator circuitry is fabricated using a pseudomorphic high electron mobility transistor (pHEMT) process in order to reduce the size thereof and provide short turn-on times and low quiescent current.

High loop-gain pHEMT regulator for linear RF power amplifier

An electro-static discharge (ESD) protection circuit utilizes a gate-drain breakdown characteristic of high electron mobility transistors (HEMTs) in a dual stacked configuration to provide a discharge path for electro-static discharges, while having a minimal effect on the associated circuit which is being protected.

Clamp based ESD protection circuits

Antenna switching circuitry comprises a plurality of communication ports, an antenna port, a plurality of switches, and an ESD protection device. The plurality of switches are adapted to selectively couple one or more of the communication ports to the antenna port in order to transmit or receive a signal. The ESD protection device is coupled between one of the plurality of communication ports and ground, and is adapted to form a substantially low impedance path to ground during an ESD event. Upon the occurrence of an ESD event, a received electrostatic charge passes through one or more of the plurality of switches to the ESD protection device, where it is safely diverted to ground. By using only one ESD protection device, desensitization of the antenna switching circuitry due to the parasitic loading of the ESD protection device is avoided. Further, the area of the antenna switching circuitry is minimized.

Multiple port RF switch ESD protection using single protection structure

The present invention relates to an electrostatic discharge (ESD) clamp circuit that is used to protect other circuitry from high voltage ESD events. The ESD clamp circuit may include a field effect transistor (FET) element as a clamping element, which is triggered by using a drain-to-gate capacitance and a drain-to-gate resistance of the FET element and a resistive element as a voltage divider to divide down an ESD voltage to provide a triggering gate voltage of the FET element. In its simplest embodiment, the ESD clamp circuit includes only an FET element, a resistive element, a source-coupled level shifting diode, and a reverse protection diode. Therefore, the ESD clamp circuit may be small compared to other ESD protection circuits. The simplicity of the ESD clamp circuit may minimize parasitic capacitances, thereby maximizing linearity of the ESD clamp circuit over a wide frequency range.

Depletion-mode field effect transistor based electrostatic discharge protection circuit

The present invention relates to an electrostatic discharge (ESD) clamp circuit that is used to protect other circuitry from high voltage ESD events. The ESD clamp circuit may include a field effect transistor (FET) element as a clamping element, which is triggered by using a drain-to-gate capacitance, a drain-to-gate resistance, or both of the FET element, and a resistive element as a voltage divider to divide down an ESD voltage to provide a triggering gate voltage of the FET element. In its simplest embodiment, the ESD clamp circuit includes only an FET element and a resistive element. Therefore, the single FET element ESD clamp circuit may be small compared to other ESD protection circuits. The simplicity of the ESD clamp circuit may minimize parasitic capacitances, thereby maximizing linearity of the ESD clamp circuit over a wide frequency range.

Enhancement-mode field effect transistor based electrostatic discharge protection circuit

Methods and apparatus for ESD protection of pseudomorphic high electron mobility transistor (pHEMT) circuitry are described. In one method, an ESD surge is detected at a trigger circuit. An ESD protection circuit is triggered. Current flow within the trigger circuit is limited and ESD energy is dispersed to a ground plane via the ESD protection circuit.

Growing community of inventors

Greensboro, NC, United States of America

Swaminathan Muthukrishnan