Semikron Elektronik Gmbh &co.kg

Sven Teuber

Marco Lederer

Christian Göbl

Roland Bittner

Thomas Frank

Wolfgang-Michael Schulz

Matthias Spang

Bernhard Kalkmann

Liane Müller-Schmidt

Boris Rosensaft

Uwe Schilling

A semiconductor diode includes a semiconductor body, having a first main area formed from an inner area, on which a first contact layer is arranged, and from an edge area, a current path from the first contact layer to a second contact layer arranged on a second main area situated opposite the first main area, wherein the semiconductor diode, by virtue of the configuration of the first contact layer or of the semiconductor body, is formed such that upon current flow, such current flows through a current path having the greatest heating per unit volume, and which proceeds from a further partial area of the inner area, wherein the further partial area is arranged on the other side of a boundary of an inner partial area of the inner area, said inner partial area preferably being arranged centrally, with respect to an outer partial area adjoining said inner partial area.

Semiconductor diode and electronic circuit arrangement herewith

An arrangement comprising a power semiconductor module, a capacitor, a DC-voltage busbar and a connection device. The module has two flat DC-voltage connection conductors each having a contact section. The DC-voltage connection conductors are arranged closely adjacent to one another on and close to the respective contact sections in the normal direction. The capacitor has two flat capacitor connection conductors each having a contact section. The DC-voltage busbar has two partial busbars each having a contact section. The connection device has a yoke with a die and a bearing. The respective contact sections of the DC-voltage connection conductors are clamped flat above one another between the die and the bearing. The contact sections, of the capacitor or the DC-voltage busbar, are arranged closely adjacent to one another on and close to the respective contact sections in the normal direction, and are thus force-fittingly and electrically conductively connected to one another.

Arrangement with a power semiconductor module, having a DC-voltage busbar and a capacitor

A power component device includes a heat sink having a recess with a base surface and a first side surface. The first side surface of the recess is at a generally acute angle relative to the base surface. The power component device includes a first passive electrical component with a support element, having a first side surface which faces the first side surface of the recess, and is at generally the same angle relative to the base surface as the first side surface of the recess is relative to the base surface. A pressure transmission element has a first side surface which is averted from the first side surface of the support element. The base surface is at a generally acute angle relative to the first pressure transmission element side surface. A pressure generating apparatus presses the support element against the first side surface of the recess.

Power component device

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Winkelhaid, Germany

Sven Teuber