Picosun Oy

Asm International N.v.

Asm America, Inc.

Asm Microchemistry Oy

Asm IP Holding B.v.

Neste Oy

Fortum Oil & Gas Oy

Mikrokemia Oy

Sven Lindfors

Pekka T Soininen

Tuomo Suntola

Juhana Kostamo

Wei-Min Li

Timo Malinen

Vaino Kilpi

Juha A Kustaa-Adolf Poutiainen

Ivo Johannes Raaijmakers

Pekka Knuuttila

Hilkka R Knuuttila

Outi Krause

Eeva-Liisa Lakomaa

Väinö Kilpi

Niklas Bondestam

Väino Sammelselg

Jaakko Hyvarinen

Lauri Aarik

Jaan Aarik

Peter Adam

Jaako Hyvarinen

Willi Bayerl

Jan Von Zweygbergk

Marko J Kukkonen

Juho Poutiainen

Juha Allan Kustaa-Adolf Poutiainen

Pekka J Soininen

Väino Kilpi

The invention relates to methods and apparatus in which precursor vapor is guided along at least one in-feed line into a reaction chamber of a deposition reactor, and material is deposited on surfaces of a batch of vertically placed substrates by establishing a vertical flow of precursor vapor in the reaction chamber and having it enter in a vertical direction in between said vertically placed substrates.

Atomic layer deposition reactor comprising a top-loading reaction chamber configured to carry a batch of vertically oriented substrates

The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.

Atomic layer deposition with plasma source

An apparatus and method for protecting a gas container interior, where an inlet and exhaust manifold include a port assembly attachable to a port of the gas container is provided, the gas container interior is exposed to sequential self-saturating surface reactions by sequential inlet of reactive gases via the port assembly and the port into the gas container interior, and reaction residue is pumped via the port and the port assembly out from the gas container.

Protecting an interior of a gas container with an ALD coating

A method and apparatus for depositing thin films onto a substrate is provided. The apparatus includes a gas injection structure that is positioned within a reaction chamber that has a platform. The gas injection structure may be positioned above or below the platform and comprises a first gas injector and a second gas injector. The first gas injector is in fluid communication with a first reactant source and a purge gas source. Similarly, the second gas injector is in fluid communication with a second reactant source and a purge gas source. The first and second injectors include hollow tubes with apertures opening to the reaction chamber. In one configuration, the tubes are in the form of interleaved branching tubes forming showerhead rakes. Methods are provided for deposition, in which multiple pulses of purge and reactant gases are provided for each purge and reactant step.

Method and apparatus for depositing thin films on a surface

A deposition reactor includes an in-feed part that defines an expansion space which leads reactants as a top to bottom flow from a plasma source towards a reaction chamber, the expansion space widening towards the reaction chamber, and a lifting mechanism for loading at least one substrate to the reaction chamber from the top side of the reaction chamber. The deposition reactor deposits material on the at least one substrate in the reaction chamber by sequential self-saturating surface reactions.

Deposition reactor with plasma source

System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor

The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being configured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf, and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question.

Atomic layer deposition apparatus and loading methods

A method includes depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions, controlling feeding of precursor vapor from a precursor source to a reaction chamber including the reactor containing the substrate with a first pulsing valve embedded into the precursor source, and conveying inactive gas to a precursor cartridge attached to the precursor source to raise pressure of the precursor cartridge and to ease subsequent flow of a mixture of precursor vapor and inactive gas towards the reaction chamber.

Method of depositing material using a deposition reactor

An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Also various other apparatus and methods are presented.

Apparatus and methods for deposition reactors

The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space () is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses. By virtue of transporting the different starting material species at different times through the apparatus effectively isolates the starting materials from each other thus preventing their premature mutual reactions.

Method for growing thin films

An apparatus for depositing conformal thin films by sequential self saturating chemical reactions on heated surfaces is disclosed. The apparatus comprises a movable single or dual-lid system that has a substrate holder attached to a reaction chamber lid. In other embodiments, the apparatus comprises an exhaust flow plug, a gas distribution insert, a local heater or a minibatch system. Various methods suitable for ALD (Atomic Layer Deposition) are also enclosed.

Apparatuses and methods for deposition of material on surfaces

The present invention concerns a method and an apparatus for removing substances from gases discharged from gas phase reactors. In particular, the invention provides a method for removing substances contained in gases discharged from an ALD reaction process, comprising contacting the gases with a 'sacrificial' material having a high surface area kept at essentially the same conditions as those prevailing during the gas phase reaction process. The sacrificial material is thus subjected to surface reactions with the substances contained in the gases to form a reaction product on the surface of the sacrificial material and to remove the substances from the gases. The present invention diminishes the amount of waste produced in the gas phase process and reduces wear on the equipment.

Method and apparatus for removing substances from gases

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Espoo, Finland

Sven Lindfors