Asea Brown Boveri Ag

Sven Klaka

Horst Gruning

Jan Voboril

Philippe Maibach

Jochen Rees

Bjorn Odegard

Thomas Keller

Alexander Klett

Norbert Galster

A semiconductor component including a housing for a semiconductor substrate, an anode, a cathode, an annular gate electrode flange, which laterally protrudes from the housing and concentrically surrounds the housing, and an annular auxiliary cathode flange, which protrudes from the housing and makes contact with the cathode.

Gate controlled thyristor driven with low-inductance

The present invention discloses a power semiconductor component 1 having a special pressure contact system which is suitable, for example, for circuit-breakers, rectifiers, or the like in industrial drives. A pressure-equalizing element 9 in the form of a box 10, 15 with a flowable or plastically deformable medium 12 is inserted between a pressure plunger 7a and a power semiconductor 2. Because of the hydrostatic pressure in the box 10, an inhomogeneous pressure delivered at one side is passed on to the other side as a homogeneous pressure. A homogeneous pressure delivery can be achieved, even in the edge region of the pressure surfaces 11a, 11b, by means of an inlet camber of the lateral surface 13. The box 10, 15 preferably consists of copper or AlSiC, and the medium 12 of a liquid metal (Ga, Hg), a plastic metal (Pb, Al) or of metal balls (Cu) in silicone oil. The box can be arranged on one or both sides of one or more power semiconductors 2, and can also replace the molybdenum disks 3a, 3b or contact plates 4a, 4b.

Power semiconductor component with a pressure-equalizing contact plate

A two-stage method is proposed for producing a highly transparent anode emitter (2) in a GTO (1). In a first step, an anode emitter (2) is indiffused whose thickness is greater than 0.5 .mu.m and whose doping concentration is greater than 10.sup.17 cm.sup.-3. In a second step, the emitter efficiency of the anode emitter (2) is subsequently reduced to a desired degree by local carrier life setting.

Method for the production of a gate turn-off thyristor having an

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Nussbaumen, Switzerland

Sven Klaka