Spawnt Private S.a.r.l.

Nagarjuna Fertilizers and Chemicals Limited

Psc Polysilane Chemicals Gmbh

Spawnt Private S.à.r.1.

Bauch, Christian

Sven Holl

Christian Bauch

Rumen Deltschew

Norbert Auner

Jürgen Steinwandel

Gerd Lippold

Javad Mohsseni

Thoralf Gebel

Ingolf Endler

Matthias Heuer

Christian Wolff

Seyed-Javad Mohsseni-Ala

Sayed-Javad Mohsseni-Ala

Agata Godula-Jopek

René Towara

Andrey Lubentsov

Mandy Höhn

Norbert Prof Dr Auner

Max Prof Dr Holthausen

Matthias Prof Dr Wagner

The invention relates to a method for purifying halogenated oligosilanes in the form of a pure compound or a mixture of compounds with respectively at least one direct Si&#x2014;Si bond, the substituents thereof being exclusively made from halogen or from halogen and hydrogen and in the composition thereof, the atomic ratio of the substituents:silicon is at least 3:2, by the action of at least one purification agent on the halogenated oligosilane and by isolating the halogenated oligosilanes with improved purity. According to prior art, halogenated monosilanes such as HSiClare purified by treating with organic compounds, preferably polymers, containing amino groups, and are separated from said mixtures. Based on the contained amino groups, said method can not be used for halogenated oligosilanes as the secondary reactions lead to a decomposition of the products. The novel method is used to provide the desired products in a high yield and purity without using the amino groups.

Method for purifying halogenated oligosilanes

The present invention relates to a halogenated polysilane as a pure compound or mixture of compounds each having at least one direct Si&#x2014;Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in whose composition the atomic ratio substituent:silicon is greater than 1:1.

Halogenated polysilane and thermal process for producing the same

A method for removing impurities from silicon includes A) providing metallic silicon having impurities, B) mixing the metallic silicon with at least one halogenated polysilane of Formula SiX, where X is halogen, which may be partially replaced by hydrogen, and where 1&#x3c;n&#x3c;2.5, and C) heating the metallic silicon so that there is at least partly a reaction of the impurities with the at least one halogenated polysilane or with a decomposition product of the at least one halogenated polysilane, wherein C) may take place before, during and/or after B).

Method for removing impurities from silicon

The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group.

Method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group

A method and a device produce short-chain halogenated polysilanes and/or short-chain halogenated polysilanes and halide-containing silicon by thermolytic decomposition of long-chain halogenated polysilanes. The thermolytic decomposition of long-chain halogenated polysilanes diluted with low-molecular halosilanes is carried out under an atmosphere of halosilanes, thereby ensuring the production of such products at industrial scale in a simple and cost-effective manner.

Method and device for producing short-chain halogenated polysilanes

A method produces hexachlorodisilane. Hexachlorodisilane is obtained by oxidative splitting of the chlorinated polysilane of the empirical formula SiClx (x=0,2-0,8) using chlorine gas. The hexachlorodisilane is selectively obtained with a high yield.

Method for producing hexachlorodisilane

The invention relates to nanowires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nanowires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or mixtures of compounds, each having at least one direct Si&#x2014;Si and/or Ge&#x2014;Si and/or Ge&#x2014;Ge bond, the substituents of which consist of halogen and/or hydrogen, and in the composition of which the atomic ratio of substituent:metalloid atoms is at least 1:1.

Nanowires made of novel precursors and method for the production thereof

A process for preparing a halogenated polysilane HSiXwith n=1 to 50; 0&#x2266;p&#x2266;2n+1, and X=F, Cl, Br, I, as an individual compound or a mixture of compounds, from a mixture which includes the halogenated polysilane or in which the halogenated polysilane is formed, additionally includes boron-containing impurities, wherein a) the mixture is admixed with at least 1 ppbw (parts per billion per weight) of a siloxane-forming oxidizing agent or siloxane, the boron-containing impurities forming compounds having a volatility and/or solubility different from the halogenated polysilanes, b) the halogenated polysilane is separated from the compound(s), and c) not more than 1 ppmw of water and not less than 1 ppb of siloxanes are present.

Method for producing halogenated polysilanes

Bodies coated with a SiC layer or with a multilayer coating system that include at least a SiC hard material layer, wherein the SiC layer consists of halogen-containing nanocrystalline 3C&#x2014;SiC or a mixed layer which consists of halogen-containing nanocrystalline 3C&#x2014;SiC and amorphous SiC or halogen-containing nanocrystalline 3C&#x2014;SiC and amorphous carbon.

Bodies coated by SiC and method for creating SiC-coated bodies

Kinetically stable halogenated polysilanes include mixture of compounds having respectively at least four silicon atoms bound together, the substituents thereof comprising chlorine, and chlorine and hydrogen, and in the composition thereof, the atomic ratio of substituent to silicon is at least 1:1, wherein a) the kinetically stable halogenated polysilanes have a kinetically high stability in relation to oxidative splitting by chlorine, and the degree of conversion at temperatures of 120&#xb0; C. within 10 hours with an excess of chlorine gas at 1013 hPa does not exceed 30 mol %, and b) the kinetically stable halogenated polysilanes have a percentage of branching points in the polysilane molecules of more than 8 mol %.

Kinetically stable chlorinated polysilanes and production thereof

A storage material for obtaining H-silanes which is present in the form of a hydrogenated polysilane (HPS), as a pure compound or as a mixture of compounds having on average at least six direct Si&#x2014;Si bonds, the substituenis of which predominantly consist of hydrogen and in the composition of which the atomic ratio of sabstitueot to silicon is at least 1:1.

Storage material and method for obtaining H-silanes therefrom

A process for hydrogenating halogenated silanes or halogenated germanes. The process comprises hydrogenating a Lewis acid-base pair with addition of H, hydrogenating halogenated silanes or halogenated germanes with an H-containing Lewis acid-base pair, and regenerating the Lewis acid-base pair and releasing hydrogen halide.

Catalytic hydrogenation

The invention is directed to mixtures of polysilanes macroscopically solid at ambient temperature wherein the individual components of the composition SiHand/or SiHof which decompose before they are boiling at an applied process pressure and which are produced from the hydrogenation of plasmachemically generated largely chlorinated polysilane mixtures. These mixtures of polysilanes are especially suited to be applied onto surfaces as solutions or dispersions and to obtain silicon-based structures or layers in subsequent process steps. Furthermore, they are especially safe in handling and can be additionally made up into transport forms in suitable transport containers.

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Gueckingen, Germany

Sven Holl