Nanoplus Nanosystems and Technologies Gmbh

Julius-maximillians-universität-würzburg

Sven Hoefling

Adam Bauer

Lukas Worschech

An interband cascade laser amplifier medium (M) having a number of cascades (C) strung together along a transport direction (T) of charge carriers and each having an electron injector region (I), an amplifier region (V) and an electron collector region (K), wherein the amplifier region (V) has a hole quantum film () having a first semiconductor material and an electron quantum film () having a second semiconductor material, and wherein the electron collector region (K) has at least one collector quantum film () having a third semiconductor material and separated by a first barrier layer (), and the electron injector region (I) has at least one injector quantum film () having a fourth semiconductor material and separated by a second barrier layer ().

Interband cascade laser amplifier medium

An interband cascade laser amplifier medium having an amplifier region (V) comprising a hole quantum film () comprising a first semiconductor material and an electron quantum film () comprising a second semiconductor material, an electron collector region (K) comprising at least one collector quantum film () comprising a third semiconductor material and separated by a first barrier layer (), and an electron injector region (I) following the latter and comprising at least one injector quantum film () comprising a fourth semiconductor material and separated by a second barrier layer (). The first semiconductor material of the hole quantum film () is a III-V compound semiconductor comprising at least four elements, at least two of the elements selected from Ga, In and Al, and at least two of the elements selected from As, Sb, P and N. The amplifier medium exhibits an efficient laser emission at wavelengths above 2.5 &#x3bc;m.

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Zellingen, Germany

Sven Hoefling