Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Osram Opto Semiconductor Gmbh

Ams-osram International Gmbh

Sven Gerhard

Alfred Lell

Christoph Eichler

Clemens Vierheilig

Bernhard Stojetz

Andreas Löffler

Harald König

Muhammad Ali

John Brückner

Andreas Loeffler

André Somers

Georg Brüderl

Thomas Adlhoch

Jens Ebbecke

Christian Rumbolz

Lars Nähle

Jan Marfeld

Adrian Stefan Avramescu

Jens Mueller

Uwe Strauβ

Thomas Veit

Jens Müller

Teresa Wurm

Urs Heine

Christian Kurz

Joachim Pfeiffer

The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.

Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip

Disclosed is an optoelectronic component comprising: Also disclosed is a method for producing an optoelectronic component.

Optoelectronic component and method for producing an optoelectronic component

The invention relates to an edge-emitting semiconductor laser diode, having: —a semiconductor layer sequence, which comprises a bottom surface, a ridge waveguide on a top surface facing away from the bottom surface, and a side surface which is arranged transverse to the top surface, and —a first recess, which extends from the bottom surface to the top surface, wherein —a first region of the semiconductor layer sequence is removed from the side surface in the region of the first recess. The invention further relates to a method for producing a plurality of edge-emitting semiconductor laser diodes.

Edge-emitting semiconductor laser diode and method for producing a plurality of edge-emitting semiconductor laser diodes

An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductive type, an active region configured to generate electromagnetic radiation, a second region of a second conductive type and a coupling-out surface configured to couple-out the electromagnetic radiation, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, and wherein the coupling-out surface is arranged plane-parallel to the rear surface.

Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device

A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

Semiconductor laser diode

In one embodiment, the invention relates to a semiconductor laser comprising a semiconductor layer sequence for generating laser radiation. According to the invention, the semiconductor layer sequence has a geometric structuring on a top side. A resonator is located in the semiconductor layer sequence and is delimited by opposing facets, wherein the facets contain optically active resonator end faces. The structuring ends spaced apart from the facets. The resonator end faces are spaced apart from material removals from the semiconductor layer sequence.

Semiconductor laser and production method for a semiconductor laser

In an embodiment, the semiconductor laser () comprises a semiconductor layer sequence () in which an active zone () for generating laser radiation (L) is located. Several electrical contact surfaces () serve for external electrical contacting of the semiconductor layer sequence (). Several parallel ridge waveguides () are formed from the semiconductor layer sequence () and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench () between adjacent ridge waveguides. At least one electrical feed () serves from at least one of the electrical contact surfaces () to guide the current to at least one of the ridge waveguides (). A distance (A) between the ridge waveguides is at most 50 μm. The ridge waveguides () are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.

Semiconductor laser and projector

A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.

Method of producing a semiconductor laser and semiconductor laser

An optoelectronic semiconductor component is provided that includes a primary light source and a secondary light source. The primary light source and the secondary light source are monolithically integrated in the semiconductor component so that only condensed matter is located between them. The primary light source includes a first resonator containing a semiconductor layer sequence which is electrically pumped during operation. A first resonator axis of the first resonator is oriented parallel to a growth direction (G) of the semiconductor layer sequence. The primary light source is configured to generate pump laser radiation (P). The secondary light source includes a pump medium for generating secondary radiation (S) and the pump medium is optically pumped by the pump laser radiation (P). The first resonator axis points past the pump medium.

Optoelectronic semiconductor component

A method for singulating semiconductor components () is specified, said method comprising the steps of providing a carrier (), applying at least two semiconductor chips () on the carrier (), etching at least one break nucleus () at a side of the carrier () facing the semiconductor chips (), and singulating at least two semiconductor components () by breaking the carrier () along the at least one break nucleus (). The at least one break nucleus () extends at least in places in a vertical direction (z), the vertical direction (z) being perpendicular to a main extension plane of the carrier (), and the at least one break nucleus () is arranged between the two semiconductor chips () in a lateral direction (x), the lateral direction (x) being parallel to the main extension plane of the carrier (). Further, each of the semiconductor components () comprises at least one of the semiconductor chips (), and the expansion of the at least one break nucleus () in the vertical direction (z) is at least% of the expansion of the carrier () in the vertical direction (z). Furthermore, a semiconductor component () is specified.

Method for manufacturing optoelectric semiconductor component and optoelectric semiconductor component device

A semiconductor laser () is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes comprises a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.

Semiconductor laser and manufacturing method for a semiconductor laser

An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.

Optoelectronic component

A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a composite, wherein the laser bars each include a plurality of laser diode elements arranged side by side, and the laser diode elements include a common substrate and a semiconductor layer sequence arranged on the substrate, and a division of the composite at a longitudinal separation plane extending between two adjacent laser bars leads to formation of laser facets of the laser diodes to be produced, and structuring the composite at at least one longitudinal separation plane, wherein a structured region is produced in the substrate.

Method of producing a plurality of laser diodes and laser diode

In an embodiment a semiconductor laser diode includes a semiconductor layer sequence comprising an active layer having a main extension plane, the semiconductor layer sequence configured to generate light in an active region and radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, wherein the first and second contact regions adjoin one another.

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Alteglofsheim, Germany

Sven Gerhard