United States of America As Represented by the Secretary of the Air Force

Sven A Roosild

Freeman D Shepherd

Andrew C Yang

D Eirug Davies

Lyn H Skolnik

Russell P Dolan, Jr

A Schottky barrier device having a completely submersed Schottky barrier junction to enhance the collection efficiency of photogenerated carriers. A method is also disclosed for manufacturing the device.

Buried junction enhanced Schottky barrier device

The use of ion implantation to produce low concentrations of chromium, oxygen or iron in a gallium arsenide junction type semiconductor, utilizing the accompanying low resistivity to provide an improved device.

Method and means for passivation and isolation in semiconductor devices

A radiation transparent base having a number of coincentric Fresnel rings mounted on one face, and one-quarter wavelength in thickness and a reflective coating covering the face and rings and a detector mounted on the opposite face to collect reflected in phase radiation.

Phase compensated zone plate photodetector

A solid state sensing retina for infrared vidicon television camera tubes using a low voltage electron beam, consisting of a monolithic silicon wafer having an n-type substrate and two dimensional array of p-type islands, each island has a Schottky electrode photoemitter and substrate contact buss, an ohmic contact pad allows charging of the p-type region beneath the Schottky electrode.

Growing community of inventors

Framingham, MA, United States of America

Sven A Roosild