Denki Kagaku Kogyo Kabushiki Kaisha

Denka Company Limited

National Institute of Advanced Industrial Science and Technology

Gunma University

National Institutes for Quantum and Radiological Science and Technology

National Institute for Materials Science

Suzuya Yamada

Tomohiro Nomiyama

Atsushi Sakai

Yoshitaka Taniguchi

Keita Kobayashi

Yasuhito Fushii

Shuzo Kanzaki

Kohki Ichikawa

Kiyoshi Hirao

Shuji Sakaguchi

Takahiro Satoh

Tomihiro Kamiya

Hideyuku Emoto

Hisayuki Hashimoto

Wataru Kada

Junichi Susaki

Kenta Miura

Osamu Hanaizumi

Yukihiko Yamauchi

Masayoshi Ichikawa

Akira Hasegawa

Ryozo Nonogaki

Makoto Watanabe

Go Takeda

Hirotoshi Hagiwara

Seiji Kuroda

Mitsuru Kawagoe

Mitsuaki Saito

Hiroshi Araki

Kenichi Ehara

Yoshiharu Mori

Shuji Nat Inst Adv Ind Sc & Tech Sakaguchi

Kiyoshi Nat Inst Adv Ind Sc & Tech Hirao

Y Nat Inst Adv Ind Sc & Tech Yamauchi

Shuzo Nat Inst Adv Ind Sc & Tech Kanzaki

A method for manufacturing an aluminum circuit board including a step of spraying a heated metal powder containing aluminum particles and/or aluminum alloy particles to a ceramic base material, and of forming a metal layer on a surface of the ceramic base material. A temperature of at least a part of the metal powder is higher than or equal to a softening temperature of the metal powder and lower than or equal to a melting point of the metal powder at a time point of reaching the surface of the ceramic base material. A velocity of at least a part of the metal powder is greater than or equal to 450 m/s and less than or equal to 1000 m/s at the time point of reaching the surface of the ceramic base material.

Method for manufacturing aluminum circuit board

A method for producing a ceramic circuit board including a ceramic substrate and a metal circuit formed on the ceramic substrate. The disclosed method includes a step of forming the first metal layer in contact with the ceramic substrate by spraying a first metal powder containing at least either of aluminum particles or aluminum alloy particles together with an inert gas onto a surface of a ceramic substrate from a nozzle, in which the first metal powder is heated to from 10&#xb0; C. to 270&#xb0; C. and then ejected from the nozzleand a gauge pressure of the inert gas at an inlet of the nozzleis from 1.5 to 5.0 MPa, a step of subjecting the first metal layer to a heat treatment in an inert gas atmosphere, and the like.

Method for producing ceramic circuit board

Provided are a charged particle radiation measuring method and a charged particle radiation measuring device using a scintillator comprising a phosphor in which the main component is a SiAlON phosphor.

Charged particle radiation measuring method and charged particle radiation measuring device

[Problem] To provide highly heat-resistant and radiation-resistant radiation measuring equipment. [Solution] Provided are a charged particle radiation measuring method and a charged particle radiation measuring device using a scintillator comprising a phosphor in which the main component is a SiAlON phosphor.

A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an nitride phosphor (C) having a peak wavelength of at least 615 nm but not higher than 625 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the nitride phosphor (C) is at least 10% but not higher than 20% by mass.

Phosphor and light-emitting device

A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an oxynitride phosphor (C) having a peak wavelength of at least 645 nm but not higher than 655 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the oxynitride phosphor (C) is at least 10% but not higher than 20% by mass.

Phosphor for light-emitting device

&#x3b2;-SiAlON represented by a general formula SiAlONwith Eu dissolved therein, whose spin density corresponding to absorption g=2.00&#xb1;0.02 at 25&#xb0; C. obtained by the electron spin resonance method is equal to or lower than 6.0&#xd7;10spins/g. A method of manufacturing the &#x3b2;-SiAlON includes: a mixing step of mixing &#x3b2;-SiAlON materials; a baking step of baking the &#x3b2;-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500&#xb0; C. to a baking temperature of the baking step at a rate equal to or lower than 2&#xb0; C./min.; an annealing step of annealing the &#x3b2;-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the &#x3b2;-SiAlON having undergone the annealing step. The objective of the present invention is to provide &#x3b2;-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the &#x3b2;-SiAlON, and a light-emitting device using the &#x3b2;-SiAlON.

&#x3b2;-sialon and method of manufacturing thereof, and light-emitting device

Provided are an &#x3b1;-SiAlON activated by Eu, which can realize a higher luminance in a light-emitting device such as a white LED, and also a light-emitting device. The &#x3b1;-SiAlON is represented by the general formula: (M)(Eu)(Si)(Al)(O)(N)(wherein M denotes one or more elements including at least Ca, selected from the group consisting of Li, Mg, Ca, Y and lanthanide elements (except for La and Ce)), and is constituted by an &#x3b1;-SiAlON having Eu in the form of a solid solution. The 50% mean area diameter of primary particles of the &#x3b1;-SiAlON is 5 &#x3bc;m or more, and the ratio of the 50% mean area diameter of primary particles to the 50% mean area diameter of secondary particles of the &#x3b1;-SiAlON is preferably 0.56 or more. A light-emitting deviceincludes a light-emitting light sourceand a wavelength conversion member, wherein the wavelength conversion memberincludes a &#x3b1;-SiAlONfor absorbing near-ultraviolet to blue light generated by the light-emitting light sourceto generate yellow to orange light.

&#x3b1;-SiAlON, light-emitting device and use thereof

Provided is a production method of a &#x3b2;-sialon phosphor that europium ions are solid-solved in &#x3b2;-sialon, including a mixing process for mixing raw materials of the &#x3b2;-sialon phosphor; a burning process for burning the raw materials after the mixing process to form the &#x3b2;-sialon phosphor; a HIP treatment process in which the &#x3b2;-sialon phosphor after the burning process is subjected to a HIP treatment; an annealing process in which the &#x3b2;-sialon phosphor after the HIP treatment process is subjected to an annealing treatment; and an acid treatment process in which the &#x3b2;-sialon phosphor after the annealing process is subjected to an acid treatment. According to the production method of a &#x3b2;-sialon phosphor, a &#x3b2;-sialon phosphor excellent in luminescence intensity is obtained.

Method for producing &#x3b2;-sialon phosphor

A boron carbide based sintered body having a four-point flexural strength of at least 400 MPa and a fracture toughness of at least 2.8 MPa&#xb7;m, which has the following two preferred embodiments. (1) A boron carbide-titanium diboride sintered body obtained by sintering a mixed powder of a BC powder, a TiOpowder and a C powder while reacting them under a pressurized condition and comprising from 95 to 70 mol % of boron carbide and from 5 to 30 mol % of titanium diboride, wherein the boron carbide has a maximum particle diameter of at most 5 &#x3bc;m. (2) A boron carbide-chromium diboride sintered body containing from 10 to 25 mol % of CrBin BC, wherein the sintered body has a relative density of at least 90%, boron carbide particles in the sintered body have a maximum particle diameter of at most 100 &#x3bc;m, and the abundance ratio (area ratio) of boron carbide particles of from 10 to 100 &#x3bc;m to boron carbide particles having a particle diameter of at most 5 &#x3bc;m, is from 0.02 to 0.6.

Boron carbide based sintered compact and method for preparation thereof

A thermionic cathode structure comprises two parallel thermionic electron emitter elements which are made of a heat resistant and electric conductive inorganic compound. Each of them has one end electrically closed and the other end functioning as a current feeding port.

Thermionic cathode structure

Growing community of inventors

Machida, Japan

Suzuya Yamada