Rohm and Haas Electronic Materials Korea Ltd.

Dupont Specialty Materials Korea Ltd.

Dupont Electronic Materials International, LLC

Suwoong Kim

Jung June Lee

Jin Hong Park

Jae Hwan Sim

Min Hee Jang

You Rim Shin

Jae Bong Lim

Myung Yeol Kim

Yoo-Jin Ghang

Jae-Bong Lim

Bhooshan Popere

A photoresist underlayer composition, comprising: a first polymer comprising a crosslinkable group; a second polymer comprising: a first repeating unit comprising a repeating unit comprising a photoacid generator, and a second repeating unit comprising a hydroxy-substituted Calkyl group, a hydroxy-substituted Ccycloalkyl group, or a hydroxy-substituted Caryl group; an acid catalyst; and a solvent.

Composition for photoresist underlayer

A monomer represented by Chemical Formula (1): wherein, X, Y, and Z are the same as described in the specification, and the polymer including repeat units derived from the monomer.

Coating composition for forming resist underlayer film for EUV lithography process

A coating composition comprising a crosslinkable polyester polymer comprising an isocyanurate group and a crosslinkable group; a crosslinker; and an acid catalyst, wherein at least one of the crosslinkable polyester polymer and the crosslinker comprises an iodine-containing polymer.

Coating composition for photoresist underlayer

A polymer comprising a first repeating unit including an amino group protected by an alkoxycarbonyl group; a second repeating unit including a nucleophilic group; and a third repeating unit including a crosslinkable group, wherein the first repeating unit, the second repeating unit, and the third repeating unit are different from each other.

Polymers, underlayer coating compositions comprising the same, and patterning methods

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Hwaseong-si, South Korea

Suwoong Kim