Sumitomo Electric Industries, Limited

Susumu Yoshimoto

Takao Nakamura

Masaki Ueno

Katsushi Akita

Youichi Nagai

Koji Uematsu

Makoto Kiyama

Koji Katayama

Takashi Sakurada

Suguru Arikata

Ayako Ikeda

Takamichi Sumitomo

Kei Fujii

Hideki Matsubara

Takuma Fuyuki

Takashi Kyono

Hiroki Mori

Keiichiro Tanabe

Takashi Misaki

Takashi Ishizuka

Fumitake Nakanishi

Takeshi Aoki

Mitsuhiko Sakai

Koji Nishizuka

Toshiyuki Tanahashi

Hirohisa Saitou

Satoshi Matsuba

A vertical cavity surface-emitting laser configured to emit laser light having a wavelength of 830 nm to 910 nm includes a substrate having a main surface including GaAs, a first distributed Bragg reflector, an active layer, and a second distributed Bragg reflector. The substrate, the first distributed Bragg reflector, the active layer, and the second distributed Bragg reflector are arranged in a first axis direction intersecting the main surface. The main surface has an off angle of 6° or more with respect to a (100) plane. The active layer includes InAlGaAs (0<x<1, 0≤y<1). The active layer has a strain. An absolute value of the strain is 0.5% to 1.4%.

Vertical cavity surface-emitting laser

A semiconductor stacked body includes: a first semiconductor layer containing a group III-V compound semiconductor and being a layer whose conductivity type is a first conductivity type; a quantum-well light-receiving layer containing a group III-V compound semiconductor; a second semiconductor layer containing a group III-V compound semiconductor; and a third semiconductor layer containing a group III-V compound semiconductor and being a layer whose conductivity type is a second conductivity type. The first semiconductor layer, the quantum-well light-receiving layer, the second semiconductor layer, and the third semiconductor layer are stacked in this order. The concentration of an impurity that generates a carrier of the second conductivity type is 1&#xd7;10cmor more and 1&#xd7;10cmor less in the second semiconductor layer.

Semiconductor stacked body, light-receiving element, and method for producing semiconductor stacked body

A vertical cavity surface emitting laser includes: a supporting base having a principal surface including III-V compound semiconductor containing gallium and arsenic as constituent elements; and a post disposed on the principal surface. The post has a lower spacer region including a III-V compound semiconductor containing gallium and arsenic as group-III elements, and an active layer having a quantum well structure disposed on the lower spacer region. The quantum well structure has a concentration of carbon in a range of 2&#xd7;10cmor more to 5&#xd7;10cmor less. The quantum well structure includes a well layer and a barrier layer. The well layer includes a III-V compound semiconductor containing indium as a group-III element, and the barrier layer includes a III-V compound semiconductor containing indium and aluminum as group-III elements. The lower spacer region is disposed between the supporting base and the active layer.

Vertical cavity surface emitting laser, method for fabricating vertical cavity surface emitting laser

A semiconductor layer includes a first semiconductor layer containing a III-V group compound semiconductor and having a first conductivity type, a quantum-well structure containing a III-V group compound semiconductor, a second semiconductor layer containing a III-V group compound semiconductor, a third semiconductor layer containing a III-V group compound semiconductor, and a fourth semiconductor layer containing a III-V group compound semiconductor and having a second conductivity type different from the first conductivity type. The first semiconductor layer, the quantum-well structure, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer are stacked in this order. The concentration of an impurity that generates carriers of the second conductivity type is lower in the third semiconductor layer than in the fourth semiconductor layer. The concentration of an impurity that generates majority carriers in the second semiconductor layer is lower in the third semiconductor layer than in the second semiconductor layer.

Semiconductor laminate and light-receiving element

A method of measuring a breakdown voltage of a semiconductor element includes the steps below. A wafer provided with a plurality of semiconductor elements each having an electrode is prepared. The wafer is divided into a plurality of chips provided with at least one semiconductor element. After the step of division into the plurality of chips, a breakdown voltage of the semiconductor element is measured while a probe is in contact with the electrode of the semiconductor element in an insulating liquid.

Method of measuring breakdown voltage of semiconductor element and method of manufacturing semiconductor element

A semiconductor laser device includes: a substrate having a principal plane; a photonic crystal layer having an epitaxial layer of gallium nitride formed on substrate in a direction in which principal plane extends and a low refractive index material having a refractive index lower than that of epitaxial layer; an n-type clad layer formed on substrate; a p-type clad layer formed on substrate; an active layer that is interposed between n-type clad layer and p-type clad layer and emits light when a carrier is injected thereinto; and a GaN layer that covers a region directly on photonic crystal layer. Thus, the semiconductor laser device can be manufactured without fusion.

Semiconductor laser device and manufacturing method thereof

There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an InGaN (0&#x3c;X1&#x3c;1) layer on a gallium nitride-based semiconductor region in a reactor; after taking out a substrate product including the InGaN layer from the reactor, forming a plurality of openings for a two-dimensional diffraction grating of the two-dimensional photonic crystal in the InGaN layer to form a patterned InGaN layer; and growing an AlGaN (0&#x2266;X2&#x2266;1) layer on a top surface of the patterned InGaN layer to form voids associated with the openings.

Method of fabricating semiconductor laser

In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 &#x3a9;&#xb7;cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.

Light emitting apparatus

A substrateis set in a film-forming apparatus, such as a metal organic vapor phase epitaxy system, and a GaN buffer film, an undoped GaN film, and a GaN filmcontaining a p-type dopant are successively grown on the substrateto form an epitaxial substrate E. The semiconductor filmalso contains hydrogen, which was included in a source gas, in addition to the p-type dopant. Then the epitaxial substrate Eis placed in a short pulsed laser beam emitter. A laser beam Lis applied to a part or the whole of a surface of the epitaxial substrate Eto activate the p-type dopant by making use of a multiphoton absorption process. When the substrate is irradiated with the pulsed laser beam Lwhich can induce multiphoton absorption, a p-type GaN filmis formed. There is thus provided a method of optically activating the p-type dopant in the semiconductor film to form the p-type semiconductor region, without use of thermal annealing.

Method for forming p-type semiconductor region, and semiconductor element

A light emitting device includes a nitride semiconductor substrate with a resistivity of 0.5 &#x3a9;&#xb7;cm or less, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at a first main surface side of the nitride semiconductor substrate, and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, wherein one of the nitride semiconductor substrate and the p-type nitride semiconductor layer is mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side. Therefore, there is provided a light emitting device which has a simple configuration thereby making it easy to fabricate, can provide a high light emission efficiency for a long time period, and can be easily miniaturized.

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Itami, Japan

Susumu Yoshimoto