Nec Corporation

Nihon Dempa Kogyo Co., Ltd.

Susumu Yoshimoto

Yasushi Yamamoto

Toshihiko Kawamoto

Kazuo Akaike

Toshimasa Tsuda

Junichiro Yamakawa

Tatsunori Onzuka

Mikio Takano

Kenji Kawahata

Hiroshi Hoshigami

Kietsu Saito

There is provided a voltage controlled oscillator that is compact and can be manufactured at low cost. The voltage controlled oscillator is structured to include: a resonance part including a variable capacitance element and an inductance element, the variable capacitance element having a capacitance that varies according to a control voltage for frequency control input from an external part, and a series resonant frequency of the resonance part being adjusted according to the capacitance; an amplifying part amplifying a frequency signal from the resonance part; and a feedback part including a capacitance element for feedback and feeding the frequency signal amplified by the amplifying part back to the resonance part to form an oscillation loop together with the amplifying part and the resonance part, wherein the amplifying part is provided in an integrated circuit chip, and the resonance part and the capacitance element for feedback are formed as circuit components separate from the integrated circuit chip. The circuit components are selected according to an oscillation frequency.

Voltage controlled oscillator

To provide a receiving side filter of a duplexer and a duplexer capable of preventing a leakage of an electric field and a magnetic field to the outside. In a receiving side filter having a longitudinal mode resonator type filter including cross finger electrodes and reflectors respectively formed on a piezoelectric substrate and an unbalanced input signal path and balanced output ports respectively provided on an input side and on an output side of the longitudinal mode resonator type filter, and used on a receiving side of a duplexer, a shield electrode connected to a ground electrode side of the cross finger electrode is disposed to surround a periphery of the receiving side filter so that an electric field and a magnetic field leaked to the outside from the receiving side filter are short-circuited by the shield electrode.

Receiving side filter of duplexer and duplexer

To provide a voltage controlled oscillator having small size and capable of obtaining a low phase noise characteristic over a large span of adjustable range of frequency. A quartz crystal having a characteristic (dielectric loss tangent: tan &#x3b4;) better than that of fluorocarbon resin, LTCC or the like conventionally used as a substrate of a resonance part, and on which a fine pattern of metal film can be formed through a photolithography method, is used as a quartz-crystal substrate, and a conductive line is formed on the quartz-crystal substrate to form an inductance element in the resonance part. Accordingly, since the resonance part having a high Q value can be formed, it is possible to obtain a voltage controlled oscillator having small size and low loss over a wide frequency range.

Voltage controlled oscillator and electronic component

Disclosed is a miniaturized duplexer having a good isolation characteristic. A duplexer having a high band side filter and a low band side filter that are each formed in a ladder-type filter provided on a common piezoelectric substrate is provided with a first elastic wave resonator to be included in one of these filters, a second elastic wave resonator to be included in the other of the filters, and a first additional grating reflector provided between these resonators to reflect an elastic wave leaked from a grating reflector of the first elastic wave resonator, and in which an additional grating reflector is not provided on a side opposite to the second elastic wave resonator in the first elastic wave resonator.

Duplexer including first and second additional grating reflectors

A duplexer formed on a piezoelectric substrate includes a low band side filter and a high band side filter, and has an improved isolation characteristic in a pass frequency band of the high band side filter. Transmission and reception of signals are respectively performed from either of the low band side filter and the high band side filter and the other filter with respect to an input/output port. Series arms and parallel arms each formed of an elastic wave resonator form the low band side filter. A shield electrode is disposed close to either of the input/output port and a low band side filter port, and is grounded for capacitive coupling with same.

Low band side filter of duplexer, high band side filter of duplexer, and duplexer

To provide a duplexer which is small in size and excellent in separation characteristic of transmission/reception signals. An antenna port is disposed on a center of a rearward side in a disposition area of a duplexer, a high band side filter and a low band side filter are respectively disposed on a left side and a right side of the antenna port, a parallel arm at a last stage in the low band side filter, a parallel arm at a last stage in the high band side filter, a first signal port and a second signal port seen from the antenna port are positioned on a forward side of the antenna port, a ground side of a parallel arm on a front stage side of the parallel arm at the last stage in the low band side filter and a ground side of a parallel arm on a front stage side of the parallel arm at the last stage in the high band side filter are mutually connected via a conductive path formed on a piezoelectric substrate at a rearward side of the antenna port, and the parallel arms connected by the conductive path are positioned on the rearward side of the parallel arms at the last stages. Accordingly, a separation characteristic at a high band side is improved.

Duplexer formed on piezoelectric substrate

In order to reduce the parts required for matching of an SAW filter module, the SAW filter moduleobtains matching for coupling SAW filtersA toD with RF-IC 20 using impedance matching circuitsA toD. The real part of output impedance Z saw of the SAW filter is closely matched with the real part of input impedance Zic of an RF-IC. The impedance matching circuit modifies the imaginary part of the output impedance Zm of the SAW filter module according to the imaginary part of the input impedance Zic of the RF-IC 20. The impedance matching circuit composed of one piece of inductance or capacitor, or a plurality of inductors or capacitors in parallel connection, ans formed as a print pattern on a module substrate, in which the real part R saw and the real part Ric are in a relation nearly of 0.8 Ric&#x3c;R saw&#x3c;1.2 Ric.

Acoustic surface wave filter module and method of manufacturing the same

The present invention disclosed a SAW filter in which unnecessary space on a chip can be reduced in comparison with the prior art, and in which a smaller chip can be realized. Because oblique step shaped reflection surfaces are provided in order to reflect the SAW, a smaller SAW filter than that used in the prior art can be realized.

Surface acoustic wave filter

A surface acoustic wave device and method of connecting surface acoustic wave filters are provided in which the relative out-of-band attenuation is increased to prevent the propagation of electrical feedthrough from the input of a first stage to the output of the second stage of a device. In a multistage connection configuration of transversely coupled mode resonator-type surface acoustic wave (SAW) filters, electrically balanced signals are applied to the two inputs of the first-stage filter, the portion between stages that joins the first-stage filter and the second-stage filter is an electrically unbalanced connection, and one of the connections between the two outputs of the first stage and the two inputs of the second stage is connected to ground potential. Subsequently, the two outputs of the second stage again become electrically balanced signal output.

Surface acoustic wave device and method of connecting surface acoustic wave filters

A surface acoustic wave filter includes IDTs on an input side and on an output side, the Inter Digital Transducers (IDTs) are formed by depositing a thin film made of aluminum and the like on a piezoelectric substrate made of crystal, and disposed on the substrate with a spacing interposed therebetween. The width of each electrode digit of each IDT is 1/4 of the wavelength of the surface acoustic wave during resonance. A reflection coefficient .epsilon. per electrode digit and the total number N of pairs of the electrode digits constituting the IDTs on the input side and on the output side are set to satisfy N.epsilon..gtoreq.0.55. Also, the aperture width W.lambda. of a surface acoustic wave transmission path, the center frequency of the filter f in units of Hertz , and the thickness of the electrode digits H in units of meters, are set to satisfy fH.ltoreq.-17.5W+210.

Surface acoustic wave filter having parameters optimized to suppress

A surface acoustic wave device includes a piezoelectric substrate, an input first interdigital electrode, and an output second interdigital electrode. The input first interdigital electrode is formed on the piezoelectric substrate. The output second interdigital electrode is formed on the piezoelectric substrate to be adjacent to the first interdigital electrode. A ratio of an overlap width to an aperture width of the first interdigital electrode and a ratio of an overlap width to an aperture width of the second interdigital electrode are set to different values, so that a transverse secondary mode is suppressed with one of the first and second interdigital electrodes while a transverse quaternary mode is suppressed with the other of the first and second interdigital electrodes.

Surface acoustic wave device

A surface acoustic wave device includes first and second longitudinal mode resonators. The first longitudinal mode resonator has two resonance modes, i.e., a longitudinal mode distributed in the same direction as a propagating direction of a surface acoustic wave (SAW) and a transverse mode distributed in a direction perpendicular to the propagating direction of the SAW. The second longitudinal mode resonator is arranged adjacent to the first resonator in a direction perpendicular to the propagating direction of the SAW, and has two resonance modes, i.e., a longitudinal mode and a transverse mode. The resonance modes of the second longitudinal mode resonator are acoustically coupled to the resonance modes of the first longitudinal mode resonator. The first longitudinal mode resonator has an output InterDigital Transducer (IDT) having an interdigital electrode to excite a SAW. The second longitudinal mode resonator has an input IDT having an interdigital electrode to receive the SAW from the output IDT. The interdigital electrodes of the input and output IDTs are arranged adjacent to each other in a direction perpendicular to the propagating direction of the SAW and to partially overlap each other in the same direction as the propagating direction.

Surface acoustic wave device having two resonators with partially

In a resonator type surface acoustic wave filter, a fundamental mode of a mode to distribute in a direction perpendicular to propagating direction of a surface acoustic wave (hereinafter referred to as transverse mode) becomes a primary response, whereas a transverse secondary mode becomes spurious. In case of the surface acoustic wave device formed on a piezoelectric substrate having smaller electromechanical coupling factor of a quartz substrate or so forth, it is impossible to obtain sufficient restriction of the second mode spurious. This problem is solved by canceling electrical potential of transverse secondary mode and whereby restricting excitation with a resonator type surface acoustic device formed on a quartz substrate, in which a configuration of an interdigital electrode is selected to establish a ratio of an overlap width of an electrode finger versus an aperture width in a range greater than or equal to 0.75 to smaller than or equal to 0.85.

Growing community of inventors

Sayama, Japan

Susumu Yoshimoto