Kioxia Corporation

Susumu Yamamoto

Tsutomu Fujita

Takeori Maeda

Gen Toyota

Eiichi Shin

Tatsuo Migita

Masayuki Miura

Soichi Homma

Kazuki Takahashi

Satoshi Hongo

Yukio Katamura

Hideki Matsushige

Kazuhiro Kato

According to one embodiment, a method of manufacturing a semiconductor device includes forming a plurality of stacked bodies on a substrate, each of the stacked bodies includes a plurality of semiconductor chips. The method further includes forming a plurality of first wires on the stacked bodies. The first wires connecting the stacked bodies to each other. The method further includes forming a resin layer on the stacked bodies and the first wires, then thinning he resin layer until the first wires are exposed.

Semiconductor device and method of manufacturing a semiconductor device

A semiconductor device including a base substrate B, which includes wire layers, chips C, C, C, C, C, and Cprovided on the base substrate B, and a protective film P provided on each of the side faces of the chips C, C, C, C, C, and C

Semiconductor device and method for producing the same

A semiconductor device includes a semiconductor chip having a first face and a second face on an opposite side to the first face, and including semiconductor elements arranged on the first face. Columnar electrodes are arranged above the first face, and electrically connected to any of the semiconductor elements. A first member is located around the columnar electrodes above the first face. An insulant covers the columnar electrodes and the first member. The first member is harder than the columnar electrodes and the insulant. The first member and the columnar electrodes are exposed from a surface of the insulant.

Semiconductor device and manufacturing method thereof

Growing community of inventors

Yokkaichi, Japan

Susumu Yamamoto