Denso Corporation

Toyota Shatai Kabushiki Kaisha

Susumu Yamada

Satoru Sugita

Kenji Komiya

Takuo Nagase

Masamitsu Iwatani

Yoshiyuki Miura

Yasuo Suga

Kenji Murabayashi

Kenji Horiguchi

Shoichiro Omae

Chikanori Fujita

Takafuki Hijikata

Kosuke Yuzawa

The semiconductor device includes a semiconductor element having first and second main electrodes, first and second substrates connected to the first and second main electrodes, respectively, first and second main terminals connected to the first and second main electrodes via the first and second substrates, respectively, and a bonding member. The bonding member is interposed between the first and second main electrodes and between the first and second substrates, respectively. At least one of the first and second main terminals includes a plurality of terminals. The first and second main terminals are alternately arranged in one direction orthogonal to the thickness direction of the semiconductor element. The first and second main terminals are directly bonded to the first and second substrates without the bonding member.

Semiconductor device

A semiconductor device includes a semiconductor chip, first and second conductive members disposed on opposite sides of the semiconductor chip. The semiconductor chip includes a semiconductor substrate, a surface electrode and gate wirings. The semiconductor substrate has active regions formed with elements, and an inactive region not formed with an element. The inactive region includes an inter-inactive portion disposed between at least two active regions and an outer peripheral inactive portion disposed on an outer periphery of the at least two active regions. The surface electrode is disposed to continuously extend above the at least two active regions and the inter-inactive portion. The gate wirings are disposed above the inactive region, and include a first gate wiring disposed on an outer periphery of the surface electrode, and a second gate electrode disposed at a position facing the surface electrode.

A semiconductor device includes, a semiconductor element, a wiring member arranged to sandwich the semiconductor element, a sealing resin body. The semiconductor element has an SBD formed thereon with a base material of SiC which is a wide band gap semiconductor. The semiconductor element has two main electrodes on both surfaces. The wiring member includes (i) a heat sink electrically connected to a first main electrode and (ii) a heat sink and a terminal electrically connected to a second main electrode. The semiconductor device further includes an insulator. The insulator has a non-conducting element made of silicon. The insulator has joints on both of two surfaces for mechanical connection of the heat sinks.

It is one object of this invention to provide a technique that is effective in diminishing the range of fluctuation of a load applied to a drive source when a seat main body in a vehicle seat moving apparatus is moved between a raised position and a lowered position. For this purpose, this invention provides a vehicle seat moving apparatus constructed as follows. Provided on a rotation base, for rotating a seat main bodybetween a position where it faces the front side of the vehicle and a position where it faces a door opening, is a widthwise slide basethat moves horizontally in the vehicle width direction while the seat main bodyfaces the door opening. The seat main bodyis supported by the slide basevia four-bar linkage mechanisms. Guide rollersare attached to upper link armsof the four-bar linkage mechanisms. The guide rollersare placed on cam surfaces of cam platesprovided to the rotation base. The cam surfaces have continuously extending inclined guide surfacesthat guide such that the guide rollersmove obliquely upwards when the widthwise slide basemoves.

Seat moving device for vehicle

Growing community of inventors

Kariya, Japan

Susumu Yamada