Dowa Electronics Materials Co., Ltd.

Susumu Tsujikawa

Yoshiyuki Kobayashi

Ryo Sakamoto

Masatoshi Iwata

A light-emitting device () is provided having a current blocking layer () of buried structure, a portion of the current blocking layer () having an oxygen concentration higher than that of a light-emitting layer, the current blocking layer being of a thickness of not less than 5 nm and not more than 100 nm. It includes an etching stop layer () below the current blocking layer (), the etching stop layer being good in oxidation resistance. The light-emitting device () and its manufacturing method are provided such that the device has its current confinement effect improved and its output increased at lower forward voltage.

Growing community of inventors

Chiyoda-ku, Japan

Susumu Tsujikawa