Advanced Lcd Technologies Development Center Co., Ltd.

Other

Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center

Susumu Tsujikawa

Yukio Taniguchi

Hirotaka Yamaguchi

Masakiyo Matsumura

Yoshinobu Kimura

Mikihiko Nishitani

Masayuki Jyumonji

A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display

A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.

Crystallization apparatus and crystallization method

A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

Crystallization apparatus, crystallization method, and phase shifter

A crystallization apparatus includes an optical illumination system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an inverse peak type light intensity distribution including a minimum light intensity in a point corresponding to a phase shift portion of the phase shift mask to produce a crystallized semiconductor film. A wavefront dividing element is disposed on a light path between the optical illumination system and the phase shift mask. The wavefront dividing element wavefront-divides the light beam supplied from the optical illumination system into a plurality of light beams, and condenses the wavefront-divided light beams in the corresponding phase shift portion or in the vicinity of the portion.

The present invention is directed to a crystallization apparatus including an illumination system to illuminate a phase shift mask, which converts a light beam from the illumination system into a light beam that has a light intensity distribution of an inverse peak pattern having a minimum intensity in an area corresponding to a phase shift portion of the phase shift mask. The crystallization apparatus further includes an optical member to form on a predetermined plane a light intensity distribution of a concave pattern, which has a light intensity that is minimum in an area corresponding to the phase shift portion and increases toward the circumference of that area based on the light from the illumination system, and an image-forming optical system to set a surface of the polycrystalline semiconductor film or the amorphous semiconductor film or its conjugate plane and the predetermined plane to an optical conjugate relationship.

Crystallization apparatus, crystallization method, thin film transistor and display apparatus

A substrate processing apparatus of the present invention has a retaining base which retains a substrate, a device detecting undulation or thickness unevenness, and a control device which operates the detecting device. The substrate is deformed in a range of a field to be processed, by locally displacing the retaining base on the basis of the detected undulation or thickness unevenness of the substrate. Blurring of an image formed on the substrate can be thereby prevented.

Method and apparatus for forming pattern on thin substrate or the like

A crystallization apparatus includes an illumination optical system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an intensity distribution of an inverse peak type having a smallest light intensity in a point corresponding to a phase shift portion of the phase shift mask to generate a crystallized semiconductor film. A convergence/divergence element is disposed on a light path between the illumination optical system and phase shift mask. The convergence/divergence element converts the light beam supplied from the illumination optical system into a light beam having an upward concave intensity distribution in which the light intensity is lowest in the phase shift portion and in which the light intensity increases as distant from the phase shift portion to irradiate the phase shift mask.

Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, thin film transistor, and display

An exposure method includes the light incidence step of letting at least a part of light emitted from a light source for exposure use be incident on a mask supported by a supporting device, and the imaging step of forming an image of a mask pattern on a photosensitive material by guiding the reflecting light from the mask such that the photosensitive material supported by the supporting device receives the reflecting light coming from an incidence direction which is different from the incidence direction of the light incident on the mask.

Exposure method and apparatus

Disclosed is an exposure method and apparatus (aligner) for exposure wherein there is reduced a physical load put on a driving mechanism which moves a supporting device for supporting a mask and an exposure object which has a photosensitive material, and the structure of the driving mechanism is simplified. The method comprises an incidence step of letting at least a part of light from a light source for exposure be incident on a mask supported by a supporting device; an imaging step of letting transmission light from the mask be incident on a photosensitive material supported by the supporting device from a direction which is different from a direction of light incident on the mask, thereby causing the transmission light to form an image on the photosensitive material; a rotation step of rotating the supporting device such that a position of irradiation to the mask caused by light from the light source changes along a circumferential direction of the supporting device; and an irradiation position changing step of changing the position of irradiation of light to the mask as well as a position of irradiation of light to the photosensitive material along a direction which is different from the circumferential direction of the supporting device in a rotating plane of the supporting device while the supporting device is being rotated.

Growing community of inventors

Yokohama, Japan

Susumu Tsujikawa