Kabushiki Kaisha Toyota Chuo Kenkyusho

Canon Kabushiki Kaisha

Kabushiki Kaisha Toyoda Jidoshokki Seisakusho

Toyoda Koki Kabushiki Kaisha

Texmac, Inc.

Nano Device and System Research Inc.

Kabushiki Kaisha Toyota Chuo Kenkyusho and Narumi

Susumu Sugiyama

Takashi Suzuki

Osamu Tabata

Mitsuharu Takigawa

Hiroshi Yamamoto

Yoshio Nakamura

Tatsuo Chigira

Masami Sugimori

Hirofumi Funabashi

Yoshiteru Omura

Kouji Tsukada

Keiichi Shimaoka

Shinobu Aoki

Haruo Takagi

Masayuki Matsui

Hiroshi Tadano

Sadayuki Hayashi

Shiro Kuwahara

Shizuki Sakurai

Kazuyoshi Kawaguchi

Tomio Nagata

Tokimasa Kamiya

Harunobu Ohno

Yoshikazu Tobinaga

Shiro Yamashita

An applicator for applying functional substances, such as cosmetic powder, food color marking, India ink effect marks, or drugs into human skin, having a base, a plurality of microneedles fixed to and projecting from the base a distance only sufficient to penetrate into the stratum corneum or dermis, with the microneedles being of a material that is capable of disintegration and dispersion into the stratum corneum or dermis, such as maltose. The needles contain the functional substance for delivery into the stratum corneum or dermis. The microneedles are of a length approximately 0.5 to 500 &#x3bc;m when used to apply a functional substance to the stratum corneum, or are of a length of approximately 500 to 5,000 &#x3bc;m when used to apply a functional substance to the dermis.

Applicator for applying functional substances into human skin

A sensor includes a plurality of weight portions which swivel, support parts each of which supports at one end a corresponding one of the plurality of weight portions in the same direction, and a driving part which supplies driving power to the support parts to swivel the plurality of weight portions. The driving part swivels at least one weight portion of the plurality of weight portions in a first direction and a remaining weight portion in a second direction opposite to the first direction so that the angular velocity about an axis parallel to a predetermined swivel locus of the at least one weight portion, excluding an acceleration component in the direction of the axis, can be detected from the difference between a deviation of a swivel locus of the at least one weight portion from the predetermined swivel locus and a deviation of a swivel locus of the remaining weight portion from a predetermined swivel locus thereof.

Sensor

A digital capacitive sensing device comprises: a reference capacitor having a reference capacitance unaffected by a force to be measured; a reference pulse signal generating circuit which generates a reference pulse signal of a frequency corresponding to the reference capacitance; a sensing capacitor having capacitance variable according to the magnitude of the force; a measuring pulse signal generating circuit having a construction similar to that of the reference pulse signal generating circuit and capable of generating a measuring pulse signal of a frequency corresponding to the capacitance of the sensing capacitor; and a differential arithmetic circuit which adds the number of pulses of the reference pulse signal in a predetermined time interval to a set value and subtracts the number of pulses of the measuring pulse signal in a predetermined time interval from the set value. The reference pulse signal generating circuit is capable of compensating a zero point temperature characteristic of a detection value, and the measuring pulse signal generating circuit is capable of compensating a detection sensitivity temperature characteristic.

Capacitive sensing device

A semiconductor pressure sensor having a diaphragm formed over the surface of a semiconductor substrate by thin film forming technique is provided. The sensor comprises: a sacrificial film including a vanishable portion covering a pressure receiving region on the major surface of the semiconductor substrate and a diaphragm support portion covering the periphery of the pressure receiving region, the vanishable portion having an isotropic etching property along the pressure receiving region and the diaphragm support portion having an etching-resistant property; an insulation diaphragm film having an etching-resistant property formed on the major surface of the semiconductor substrate over the sacrificial film; at least one etching solution inlet port formed through the insulation diaphragm film to reach the vanishable portion of the sacrificial film; a reference pressure chamber formed by etching and removing at least the vanishable portion of the sacrificial film with an etching solution poured through the inlet port; and at least one strain gauge formed on the insulation diaphragm film in place at the pressure receiving region. The peripheral region of the movable diaphragm can be formed into a flat configuration without any stepped structure. Thus, the semiconductor pressure snesor has an improved characteristics.

Semiconductor pressure sensor

A static induction type semiconductor device is used as a power transistor. It is of the surface gate type and is used for providing a high current density. The static induction type semiconductor device provides a plurality of small source regions surrounded by a gate region. According to this structure, the channel region beneath the source region becomes small, thereby increasing the stored carrier density and enabling a large main current to flow when using a small gate current, thereby achieving a high current amplification ratio. Further, when it flows the main current is distributed to the source regions, thus preventing increase in on-voltage.

Static induction type semiconductor device

In a semiconductor strain detector, the temperature characteristic of the output of a zero-point temperature compensating circuit is added to the zero-point temperature characteristic of the output of a bridge circuit composed of strain gauges, to perform a zero-point temperature compensation of the final output. Further, two kinds of diffusion resistors having different surface impurity densities are used in each amplifying circuit to perform a sensitivity-temperature compensation in which a temperature coefficient of sensitivity is considered up to the second-order term.

Semiconductor strain detector

A force transducer for detecting compression. The force transducer comprises an Si single crystal so formed as to have a crystal face of {110} as the surface to which compression is applied; a first pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of &lt;001&gt; of the Si single crystal and a second pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of &lt;110&gt; of the Si single crystal; a seat which is bonded to the crystal face of {110} of the Si single crystal and which transmits the compression substantially uniformly to the crystal face; and a base which is bonded to the surface of the Si single crystal opposite to the surface bonded with the seat and which supports the Si single crystal. The force transducer has a simple structure as a whole and is capable of detecting compression with accuracy.

Force transducer

A semiconductor pressure sensor composed of a substrate formed adopting a thin-film forming technique and a diaphragm which is formed on the surface of the substrate. The sensor includes an insulating diaphragm film which is formed of an etching-resistant material on the main surface of the semiconductor substrate such as to coat it, at least one etching hole provided such as to penetrate the diaphragm film and reach the substrate, a reference pressure chamber which is formed by etching to remove a part of the semiconductor substrate and a disappearing film through the etching hole, and at least one strain gage which is provided at a predetermined position in the pressure receiving region of the diaphragm film.

A semiconductor pressure sensor composed of a substrate formed adopting a thin-film forming technique and a diaphragm which is formed on the surface of the substrate. The sensor includes an insulating diaphragm film which is formed of an etching-resistant material on the main surface of the semiconductor substrate such as to coat it, at least one etching hole provided such as to penetrate the diaphragm film and reach the substrate, a reference pressure chamber which is formed by etching to remove a part of the semiconductor substrate and a disappearing film through the etching hole, and at least one strain gage which is provided at a predetermined position in the pressure receiving region of the diaphragm film. All the processing steps of the sensor are conducted solely on the main surface of the semiconductor substrate, namely, on a single side. Therefore, it is possible to manufacture the sensor itself utilizing the substantially same technique as the known integrated circuit manufacturing technique and to form the diaphragm with a predetermined thickness such that it may process a thin and precisely dimensioned thickness.

Semiconductor pressure sensor and method of manufacturing the same

In a 3-terminal package sealed semiconductor device such as a transistor or a thyristor, an insulator formed between the respective lead conductors is made of alumina ceramic. An electrode conductor base (one of the lead conductors) for mounting a semiconductor device thereon is made of a copper-tungsten sintered alloy containing 2% by volume to 48% by volume of copper. The thermal expansion coefficient of the insulator becomes substantially the same as that of the electrode conductor base, thereby elmininating a conventionally used intermediate damping member and hence providing a compact semiconductor apparatus which has a high packaging density and which can switch a large current at high speed. The respective lead conductors have predetermined sizes to achieve high-speed large-current switching.

Semiconductor apparatus

Semiconductor strain measuring apparatus for producing electrical output signals indicative of physical strains, in which a single crystal silicon substrate has the impurity concentration within the range between 1.times.10.sup.16 cm.sup.-3 and 2.times.10.sup.19 cm.sup.-3, thereby inhibiting the increase in the reverse leakage current flowing from the strain gauge through the substrate at high temperatures and thus enabling exact measurements even at high temperatures above 180.degree. C.

Semiconductor strain measuring apparatus

A semiconductor transducer has a strain sensitive region, at least one strain gage formed integrally with a major surface of the strain sensitive region corresponding to a major surface of a monocrystalline silicon substrate, a bridge circuit including the strain gage, an operational amplifier, an input terminal of which is connected to an output terminal of the bridge circuit, and parallel-connected resistors which are integrally formed on the major surface of the monocrystalline silicon substrate and each of which has two ends connected to the input terminal and an output terminal of the operational amplifier, respectively, the strain sensitive region, the strain gage, the operational amplifier and the parallel-connected resistors being formed on the monocrystalline silicon substrate, wherein a difference between a temperature coefficient of resistance of the strain gage and a temperature coefficient of sensitivity thereof is set to be substantially the same as a temperature coefficient of resistance of the parallel-connected resistors. Resistors connected in series with the input terminals of the operational amplifier can thus be eliminated. The resistance of the parallel-connected resistors can be decreased, thereby providing a compact, highly integrated arrangement. In addition, a temperature compensator need not be used to compensate for the sensitivity.

Growing community of inventors

Nagoya, Japan

Susumu Sugiyama