Toyoda Gosei Co., Ltd.

Susumu Sugano

Hisayuki Miki

Hironao Shinohara

Yoshiharu Saegusa

Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer () so as to a main surface () of a substrate (), a masking step of forming a protective film on the semiconductor layer (), a semiconductor layer removal step of removing the protective film and the semiconductor layer () by laser irradiation to expose the substrate (), a grinding step of reducing the thickness of the substrate (), a polishing step of polishing the substrate (), a laser processing step of providing processing marks to the inside of the substrate (), a division step of creating a plurality of light-emitting devices () while forming a division surface of the substrate () to have a rough surface.

Method of manufacturing group-III nitride semiconductor light-emitting device, and group-III nitride semiconductor light-emitting device, and lamp

A method of producing a semiconductor wafer, which includes: placing a wafer () provided with a substrate () and a semiconductor layer () formed thereon, on a carrier plate (fixing plate) () of a grinder via fixing wax (and) such that the surface () to be ground faces upward; heating the carrier plate to soften the fixing wax; pressure-contacting the wafer from the side of the surface () to be ground using an air bag such that a portion of the softened fixing wax spreads and protrudes from the peripheral edge of the wafer; cooling the carrier plate while applying pressure to cure the fixing wax and fix the wafer onto the carrier plate; and rotating the surface () to be ground of the fixed wafer while pressure-contacting the surface () to the grinding plate of the grinder, thereby grinding the surface () to be ground.

Method for producing semiconductor wafer

An image pickup section picks up images of a pair of targets formed on a substrate with a cutting line interposed therebetween (S). An extracting section extracts the targets from the images (S). Then, a measuring section measures the distance dbetween the targets (S). When a driving section presses a blade against the substrate (S), the substrate is pressed by the blade to become warped and starts to break. Thus, the image pickup section picks up images of the targets again (S), and the extracting section extracts the targets from the images (S). The measuring section measures the distance dbetween the targets (S). A determining section determines the cutting state of the substrate from the amount of change (d&#x2212;d) of the distances between the targets (S). Thereby, a method for cutting a substrate and a method for manufacturing electronic elements using the method are provided by which the cutting situation of the substrate can be judged at the time of cutting the substrate into chips by breaking.

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Ichihara, Japan

Susumu Sugano