Denso Corporation

Nippondenso Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Susumu Sobue

Mitsuhiro Kataoka

Yuji Kimura

Eiichi Okuno

Satoshi Yamasaki

Hiromitsu Kato

Kazunori Suzuki

Daisuke Takeuchi

Shinichi Mukainakano

Takeshi Yamauchi

Yoshihito Mitsuoka

Shoichi Kawai

A heat transfer device that includes a thermionic power generator, a wiring, a load circuit, and a switch circuit. The thermionic power generator includes an emitter electrode and a collector electrode facing each other with an inter-electrode gap distance, and converts heat energy into electric energy by capturing, with the collector electrode, a thermoelectron that is emitted from the emitter electrode. The wiring electrically connects the emitter electrode and the collector electrode. The load circuit is connected to an electric current path of by wiring between the emitter electrode and the collector electrode. The switch circuit switches between an ON state and an OFF state.

Heat transfer device, temperature controller, internal combustion engine, exhaust system thereof, and melting furnace

A thermionic power generator includes an emitter generating thermions and a collector collecting the thermions. The emitter includes an emitter substrate having an electric conductivity, a low resistance layer stacked to the emitter substrate and made of an n-type diamond semiconductor that includes phosphorus as a donor, and an electron emission layer stacked to the low resistance layer and made of an n-type diamond semiconductor that includes nitrogen as a donor. The collector includes a collector substrate having an electric conductivity and is disposed opposite to the emitter via a clearance. The electron emission layer has a thickness equal to or less than 40 nm.

Thermionic power generator

In a method of manufacturing an electrode of a thermionic converter, a carbide layer is formed on a base material by a vapor synthesis, an N-type diamond layer doped with a donor impurity is formed on the carbide layer by a vapor synthesis, and a surface of the N-type diamond layer is terminated with hydrogen. The base material is made of a metal, and the carbide layer is made of a metal carbide.

Thermionic converter and manufacturing method of electrode of thermionic converter

A thermionic generator for converting thermal energy to electric energy includes: an emitter electrode for emitting thermal electrons from a thermal electron emitting surface when heat is applied to the emitter electrode; a collector electrode facing the emitter electrode spaced apart from the emitter electrode by a predetermined distance, and receiving the thermal electrons from the emitter electrode via a facing surface of the collector electrode; and a substrate having one surface. The emitter electrode and the collector electrode are disposed on the one surface of the substrate, and are electrically insulated from each other. The thermal electron emitting surface and the facing surface are perpendicular to the one surface.

Thermionic generator

A thermionic converter for converting thermal energy to electrical energy includes an emitter and a collector. The emitter emits thermionic electrons upon receipt of heat from a heat source. The emitter is made of a first semiconductor material to which a first semiconductor impurity is doped with a first concentration. The collector is spaced and opposite to the emitter to receive the thermionic electrons emitted from the emitter so that the thermal energy is converted to electrical energy. The collector is made of a second semiconductor material to which a second semiconductor impurity is doped with a second concentration less than the first concentration.

Thermionic converter

A formation method for forming a water repellent layer on a surface of a metal substrate forms asperities on a surface of a metal basis material of the metal substrate by irradiating the metal basis material with plasma ions. The formation method forms an alloy from atoms of a metal of the metal basis material and the plasma ions. The formation method forms the asperities with portions of the metal basis material, which are not etched due to the alloy, and portions of the metal basis material, which are not alloyed but are etched. The formation method forms the water repellent layer by forming the asperities.

Formation method of water repellent layer and injector having water repellent layer

An electrode for semiconductor devices, which can restrain the occurrence of Al voids and has a high barrier effect, is obtained by inserting a material which has a close resemblance in crystal structure to the barrier layer of a contact part and the aluminum alloy with the crystal surface thereof being oriented mainly at the (111) plane into the interface between the above barrier layer and the aluminum alloy. A semiconductor device according to the present invention comprises a silicon substrate, an interlayer insulating film partially formed on the silicon substrate, a titanium silicide layer formed on the silicon substrate at the part where the interlayer insulating film is not formed, a titanium layer formed on the interlayer insulating film and connected to the titanium silicide layer, a titanium nitride layer formed on the titanium layer and the titanium silicide layer, a Ti--Al--N layer such as Ti.sub.3 AlN and formed on the titanium nitride layer, and an aluminum alloy (Al-1%Si-0.5%Cu) composing an electrode formed on the Ti--Al--N layer.

Growing community of inventors

Obu, Japan

Susumu Sobue