Shin-Etsu Chemical Co., Ltd.

Susumu Sekiguchi

Toshio Shiobara

Noriyuki Meguriya

Syuuichi Azechi

Hideki Akiba

Yoshio Inoue

Takeo Yoshida

Masaharu Takahashi

Minoru Igarashi

Tomoaki Nakamura

Hiroshi Mogi

Takao Uno

Kenichi Takita

Thomas Tupa

The present invention provides an encapsulant with a base for use in semiconductor encapsulation, for collectively encapsulating a device mounting surface of a substrate on which semiconductor devices are mounted, or a device forming surface of a wafer on which semiconductor devices are formed, the encapsulant comprising the base, an encapsulating resin layer composed of an uncured or semi-cured thermosetting resin formed on one surface of the base, and a surface resin layer formed on the other surface of the base. The encapsulant enables a semiconductor apparatus having a good appearance and laser marking property to be manufactured.

Encapsulant with base for use in semiconductor encapsulation, semiconductor apparatus, and method for manufacturing semiconductor apparatus

A method for producing a semiconductor apparatus with a mold including an upper mold half and a lower mold half, includes: an arranging step of arranging on one of the upper mold half and the lower mold half of the mold a substrate on which a semiconductor device is mounted, the mold being kept at a room temperature or heated to a temperature up to 200&#xb0; C., and arranging on the other of the upper mold half and the lower mold half a substrate on which no semiconductor device is mounted; an integrating step of integrating the substrate on which the semiconductor device is mounted and the substrate on which no semiconductor device is mounted by molding a thermosetting resin with the mold on which the substrates are arranged; and a step of dicing the integrated substrates taken out of the mold to obtain an individualized semiconductor apparatus.

Semiconductor apparatus and method for producing the same

A fiber-containing resin substrate for collectively encapsulating a semiconductor-device-mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor-device-forming surface of a wafer on which a semiconductor device is formed, including a resin-impregnated fibrous base material which is obtained by impregnating a fibrous base material with a thermosetting resin and semi-curing or curing the thermosetting resin and has a linear expansion coefficient (ppm/&#xb0; C.) in an X-Y direction of less than 3 ppm, and an uncured resin layer formed of an uncured thermosetting resin on one side of the resin-impregnated fibrous base material.

Fiber-containing resin substrate, device-mounting substrate and device-forming wafer, semiconductor apparatus, and method for producing semiconductor apparatus

A fiber-containing resin substrate for collectively sealing a semiconductor devices mounting surface of a substrate having the semiconductor devices mounted thereon or a semiconductor devices forming surface of a wafer having semiconductor devices formed thereon, includes: a resin-impregnated fiber base material obtained by impregnating a fiber base material with a thermosetting resin and semi-curing or curing the thermosetting resin; and an uncured resin layer containing an uncured thermosetting resin and formed on one side of the resin-impregnated fiber base material. There can be a fiber-containing resin substrate that enables suppressing warp of a wafer and delamination of semiconductor devices even though a large-diameter wafer or a large-diameter substrate made of a metal and the like is sealed, enables collectively sealing a semiconductor devices mounting surface of the substrate or a semiconductor devices forming surface of the wafer, and has excellent heat resistance or moisture resistance after sealing.

Fiber-containing resin substrate, sealed substrate having semiconductor device mounted thereon, sealed wafer having semiconductor device formed thereon, a semiconductor apparatus, and method for manufacturing semiconductor apparatus

The invention provides an encapsulant for collectively encapsulating a semiconductor devices mounting surface of a substrate having semiconductor devices mounting thereon or a semiconductor devices forming surface of a wafer having semiconductor devices forming thereon, and the encapsulant comprises a supporting substrate having a difference of a linear expansion coefficient from that of the substrate or the wafer of 5 ppm or less and a thermosetting resin layer being laminated, wherein the thermosetting resin layer has a shape having a height difference to a thickness direction.

Encapsulant, encapsulated substrate having semiconductor devices mounting thereon, encapsulated wafer having semiconductor devices forming thereon, semiconductor apparatus, and method for manufacturing semiconductor apparatus

A method of manufacturing a semiconductor apparatus includes: a charging step of charging the thermosetting resin in excess of an amount necessary for forming the sealing layer to fill the inside of the first cavity with the thermosetting resin and discharging an excess of the thermosetting resin from the first cavity; an integrating step of integrating the substrate on which the semiconductor device is mounted, the substrate on which no semiconductor device is mounted and the sealing layer by molding the thermosetting resin while pressurizing the upper mold and the lower mold; and a dicing step of extracting the integrated substrates from the molding mold and dicing the integrated substrates to obtain an individual semiconductor apparatus.

Method of manufacturing semiconductor apparatus and semiconductor apparatus

Described herein is a sealant laminated composite for collectively sealing a semiconductor device's mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor device's forming surface of a wafer on which semiconductor devices are formed. The composite can include a support wafer and an uncured resin layer constituted of an uncured thermosetting resin formed on one side of the support wafer. In certain aspects, the sealant laminated composite is very versatile, even when a large diameter or thin substrate or wafer is sealed. In certain aspects, this can prevent the substrate or wafer from warping and the semiconductor devices from peeling; can collectively seal a semiconductor device's mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor device's forming surface of a wafer on which semiconductor devices are formed on a wafer level; and can provide a sealant laminated composite that is excellent in the heat resistance and humidity resistance after sealing.

Sealant laminated composite, sealed semiconductor devices mounting substrate, sealed semiconductor devices forming wafer, semiconductor apparatus, and method for manufacturing semiconductor apparatus

A cement mold-making silicone rubber composition is provided comprising (A) 100 parts by weight of a polyorganosiloxane having at least two silicon-bonded monovalent aliphatic unsaturated hydrocarbon groups in a molecule, (B) a polyorganohydrogensiloxane having at least three silicon-bonded hydrogen atoms in a molecule, in such an amount as to provide 0.1-5 silicon-bonded hydrogen atoms per monovalent aliphatic unsaturated hydrocarbon group in component (A), (C) a platinum base compound in such an amount as to provide 1-100 ppm of platinum atoms based on the weight of component (A), (D) 5-60 parts by weight of finely divided silica having a specific surface area of at least 50 m/g, and (E) 0.1-100 parts by weight of coal ash and/or pozzolan powder.

Cement mold-making silicone rubber composition

A fluorosilicone rubber composition is provided comprising (A) a first organopolysiloxane having the formula: RRRSiOwherein Ris trifluoropropyl, Ris an aliphatic unsaturated hydrocarbon group, Ris an aliphatic saturated hydrocarbon or aromatic hydrocarbon group, (B) a silica filler, (C) a second organopolysiloxane having formula (2) wherein Ris an aliphatic unsaturated hydrocarbon group or the like, and (D) a cure catalyst. The fluorosilicone rubber composition affords satisfactory adhesion at the interface with dimethylsilicone rubber even when the molding pressure is low. 

Fluorosilicone rubber composition and molded rubber article

A thixotropic silicone rubber composition comprising (A) an organopolysiloxane having on the average at least two alkenyl groups in a molecule and a degree of polymerization of up to 1,200, (B) a liquid organohydrogenpolysiloxane having at least two hydrogen atoms each attached to a silicon atom, (C) aluminum hydroxide, (D) an addition reaction catalyst, (E) a thixotropic agent, and optionally (F) a tackifier cures at room temperature or elevated temperature into a silicone rubber having high strength and electrical insulating properties sufficient to serve as a high-voltage electrical insulator. The composition is so thixotropic that it may be used in repairing chipped portions of insulators.

Silicone rubber compositions having high-voltage electrical insulation, sealing and repairing compounds for polymeric insulators

A mixture of a first aluminum hydroxide surface treated with a silicon-containing compound and having a mean particle size of 5-20 &mgr;m and a second aluminum hydroxide surface treated with a silicon-containing compound and having a mean particle size of 0.1-2.5 &mgr;m is blended in a silicone rubber composition comprising an organopolysiloxane, finely divided silica, and an organic peroxide. The silicone rubber composition cures into silicone rubber having sufficiently improved properties to serve as high-voltage electrical insulators, even when exposed to air polluted conditions or rigorous weather conditions.

Silicone rubber compositions for high-voltage electrical insulators

A silicone rubber composition contains (A) 100 parts by weight of an organopolysiloxane composition of the organic peroxide or addition reaction curing type, (B) 20-400 parts by weight of aluminum hydroxide, and (C) 1-20 parts by weight of an organopolysiloxane of formula (I): R.sup.1.sub.a (OX).sub.b SiO.sub.(4-a-b)/2 wherein R.sup.1 is a monovalent hydrocarbon group, at least 10 mol % of the R.sup.1 groups being phenyl, X is hydrogen or a monovalent hydrocarbon group, a and b are positive numbers satisfying the range: 1.0.ltoreq.a&lt;2.0, 1&lt;a+b.ltoreq.3, and 0.001.ltoreq.b/(a+b).ltoreq.0.8. The composition cures into a silicone rubber having improved high-voltage electrical insulating properties even under humid conditions.

A silicone rubber composition is obtained by blending (A) 100 parts by weight of an organopolysiloxane composition of the addition reaction curing type with (B) about 30-400 parts by weight of aluminum hydroxide which has been surface treated with an organosilane or organosilazane substantially free of an aliphatic unsaturated group or a partial hydrolyzate thereof so that the aluminum hydroxide has 0.01-2% by weight of carbon affixed thereto. The composition maintains silicone rubber properties even though it is loaded with large amounts of aluminum hydroxide. It cures into a silicone rubber having improved high-voltage electrical insulating properties and thus suited for use as high-voltage electrical insulators.

Silicone rubber compositions for high-voltage electrical insulators and

A silicone rubber composition comprising (A) 100 parts by weight of an organopolysiloxane composition of the organic peroxide or addition curing type, (B) 1-100 parts by weight of finely divided silica, and (C) 30-500 parts by weight of aluminum hydroxide is suitable for use as a high-voltage electrical insulator. The aluminum hydroxide (C) has a water-soluble sodium ion content of up to 0.01% by weight and exhibits pH 6.5-8.0 and an electrical conductivity of up to 50 .mu.s/cm when measured as a 30 wt % water slurry and preferably has been treated to be hydrophobic. The composition cures into a silicone rubber having improved high-voltage electrical insulating properties even under rigorous conditions.

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Takasaki, Japan

Susumu Sekiguchi