Fuji Photo Film Company, Limited

Sony Corporation

Other

Mitsubishi Denki Kabushiki Kaisha

Citizen Electronics Co., Ltd.

Olympus Optical Company, Ltd.

Japan Science and Technology Agency

Susumu Sato

Meiryo Tekunika Kabushiki Kaisha

Chiaki Suzuki

Takayuki Kambara

Hideyuki Karaki

Yoshinobu Misumi

Tatsushi Hamaguchi

Hiroshi Nakajima

Masamichi Ito

Jugo Mitomo

Takeshi Kanaoka

Noriyuki Futagawa

Hiroshi Tsuzaki

Yoshihiro Togashi

Shoichiro Izumi

Junichi Tsuchiya

Hidekazu Kawanishi

Takahiro Arakida

Osamu Maeda

Yuichi Sabi

Masaki Shiozaki

Nobuyasu Akiyoshi

Makoto Shimizu

Yutaka Soda

Daisaku Okuwaki

Toshiro Esaki

Takahiro Nishioka

Seiji Onoe

Masazumi Ogawa

Tetsuyuki Kurata

Zhan He

Norio Ito

Yoshimi Takahashi

Ying Zhou

Saori Hayashi

Koichi Ishii

Mituru Suzuki

Shinji Yasuda

Koichi Takahashi

Takashi Mizuochi

Hiroshi Yoshida

Akitoshi Toda

Takao Okada

Yuji Masui

Yoshio Hara

Shiro Uchida

Tadayoshi Kitayama

Tetsuya Satake

Hiroshi Ichibangase

Hisanari Shimazu

Hiroshi Seikai

Sota Shimizu

Saori Tsuda

Toshiaki Maehara

Mao Ye

Kohichi Takahashi

Junichi Teramoto

A light emitting element according to the present disclosure includes a first light reflecting layer, a laminated structure, and a second light reflecting layerlaminated to each other. The laminated structureincludes a first compound semiconductor layer, a light emitting layer, and a second compound semiconductor layerlaminated to each other from a side of the first light reflecting layer. Light from the laminated structureis emitted to an outside via the first light reflecting layeror the second light reflecting layer. The first light reflecting layerhas a structure in which at least two types of thin filmsA andB are alternately laminated to each other in plural numbers. A film thickness modulating layeris provided between the laminated structureand the first light reflecting layer

Light emitting element

A light-emitting element includes: a laminated structure bodywhich is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layerincluding a first surfaceand a second surfacethat is opposed to the first surface, an active layerthat faces the second surfaceof the first compound semiconductor layer, and a second compound semiconductor layerincluding a first surfacethat faces the active layerand a second surfacethat is opposed to the first surfaceare laminated; a first light reflection layerthat is provided on the first surfaceside of the first compound semiconductor layer; and a second light reflection layerthat is provided on the second surfaceside of the second compound semiconductor layer. The first light reflection layerincludes a concave mirror portion, and the second light reflection layerhas a flat shape.

Light-emitting element and method of manufacturing the same

A light emitting element includes: a laminated structureobtained by laminating a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a first light reflecting layerdisposed on a first surface side of the first compound semiconductor layer; a second light reflecting layerdisposed on a second surface side of the second compound semiconductor layer; and light convergence/divergence changing means. The first light reflecting layeris formed on a concave mirror portion. The second light reflecting layerhas a flat shape. When light generated in the active layeris emitted to the outside, a light convergence/divergence state before the light is incident on the light convergence/divergence changing meansis different from a light convergence/divergence state after the light passes through the light convergence/divergence changing means

Light emitting element and light emitting element array

A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structurewhich includes a GaN-based compound semiconductor and in which a first compound semiconductor layer, an active layer, and a second compound semiconductor layerare stacked, and forming a concave mirror sectionon a first surface side of the first compound semiconductor layer; then (B) forming a photosensitive material layerover the second compound semiconductor layer; and thereafter (C) exposing the photosensitive material layerto light from the concave mirror section side through the stacked structure, to obtain a treatment mask layer including the photosensitive material layer, and then processing the second compound semiconductor layerby use of the treatment mask layer.

Light emitting element and manufacturing method therefor

A light emitting element includes a laminated structure formed by laminating a first light reflecting layer, a light emitting structure, and a second light reflecting layer. The light emitting structureis formed by laminating, from the first light reflecting layer side, a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. In the laminated structure, at least two light absorbing material layersare formed in parallel to a virtual plane occupied by the active layer

Light emitting element to control an oscillation wavelength

A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, and a first semiconductor layer and a second semiconductor layer sandwiching the active layer. This light-emitting device further includes a current constriction layer having an opening and a vertical resonator including a first reflecting mirror having a concave-curved shape on the first semiconductor layer side and a second reflecting mirror on the second semiconductor side. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening. This light-emitting device further includes an optically transparent substrate between the first reflecting mirror and the laminate. The optically transparent substrate has a first convex portion having a convex-curved shape and one or more second convex portions on a surface on the side opposite to the laminate. The first convex portion is in contact with the first reflecting mirror. The one or more second convex portions are provided around the first convex portion. The one or more second convex portions each have a height greater than or equal to a height of the first convex portion, and an end on the first reflecting mirror side has a convex-curved shape.

Light-emitting device and method of manufacturing light-emitting device

A surface emitting laser includes: a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, in which the semiconductor layer includes a light emitting region; and a first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween. The first semiconductor layer has a high dislocation portion disposed outside the light emitting region. The high dislocation portion has an average dislocation density higher than an average dislocation density of the light emitting region.

Surface emitting laser and method of manufacturing the same

A surface-emitting laser according to an embodiment of the present disclosure includes a current constriction region having an opening and formed by impurities injected into a laminate from side of a second semiconductor layer; and a first DBR layer on side of a first semiconductor layer and a second DBR layer on the side of the second semiconductor layer having the laminate interposed therebetween at a position facing the opening. At the opening, an opening diameter close to the first DBR layer is larger than an opening diameter close to the second DBR layer.

Surface-emitting laser and electronic apparatus

A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer sandwich the active layer in between. The light-emitting device further includes a current confining layer, a concave-shaped first reflecting mirror provided on side of the first semiconductor layer, and a second reflecting mirror provided on side of the second semiconductor layer. The current confining layer has an opening. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening in between. The light-emitting device further includes a first reflecting layer and a phosphor layer. The first reflecting layer is disposed at a position opposed to the first reflecting mirror with a predetermined gap in between. The phosphor layer is disposed between the first reflecting mirror and the first reflecting layer, and performs wavelength conversion on light leaking from the first reflecting mirror.

Light-emitting device and light-emitting apparatus

Surface emitting laser element

Provided is a geometric transformation lens which can transform a target image geometrically as desired, achieving downsizing and reducing energy consumption. Even if another target to be observed more in detail is inside the field of view, the geometric transformation lenses (and) can magnify optically the desired region within the target projection image by supplying the magnification instruction voltage (V) to the corresponding magnifying/demagnifying electrodes (EL) simply without moving the lens itself using heavy mechanical parts motorized. This can achieve downsizing because a space for setting the existing mechanical part to control the direction of the lens and its motion can be disregarded. This also can achieve reducing energy consumption because no space is needed to move the lenses with the heavy mechanical parts.

Geometric transformation lens

Growing community of inventors

Kanagawa, Japan

Susumu Sato