Shin-etsu Chemical Co., Ltd.

Osaka Oxygen Industries, Ltd.

Siemens Aktiengesellschaft

Susumu Sakaguchi

Masaaki Iguchi

Toru Yamada

Masahiro Ogihara

Teruhiko Hirasawa

Kazuyoshi Watanabe

Sigeo Matsui

Tadashi Kamioka

Toshihiko Ryuo

Tsuguo Fukuda

Zenji Hagiwara

Kenichi Taguchi

Norifumi Yoshida

Zenzi Hagiwara

Kunihiro Ito

Takuji Shikita

Yoshio Yamanaka

Toshihiko Ryuoh

Ken Itoh

Shinji Makigawa

Akira Kamei

Yamanaka, Yoshio

Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end portion by high-frequency induction heating, a seed crystal is brought into contact with the molten portion and then the seed crystal and the starting silicon rod are pulled apart in the vertical direction at a controlled velocity with a controlled high-frequency power input so that the melt of silicon drawn by the seed crystal is solidified and crystallized into the form of a wire.

Method for the preparation of wire-formed silicon crystal

A novel structure of a silicon solar cell is disclosed, which can be prepared at an outstandingly low cost but can still exhibit good efficiency for the conversion of solar energy to electricity. The silicon solar cell comprises, as an integral body:

Silicon solar cell

The x-cut single crystal wafer of lithium tantalate according to the invention is characterized by the orientation flat formed in a specific crystallographic orientation. The plane of the orientation flat should be (A) in parallel with the (018) plane or a plane which is in parallel with the x-axis and makes an angle of 15.degree. or smaller with the (018) plane or (B) in parallel with a plane which is in parallel with the x-axis and perpendicular to the (018) plane or a plane which is in parallel with the x-axis and makes an angle of 15.degree. or smaller with the plane which is in parallel with the x-axis and perpendicular to the (018) plane. In contrast to conventional lithium tantalate single crystal wafers provided with an orientation flat in a direction parallel to the 112.degree. Y direction, the location of the crystallographic orientation of the orientation flat is very easy and consequently great advantages are obtained in the working efficiency of locating the direction of the orientation flat and improved quality as well as increased yield of acceptable devices, e.g. SAW filters, prepared from the wafers.

Single crystal wafer of lithium tantalate

An improvement in the Czochralski single crystal growing of a rare earth-gallium garnet such as gadolinium gallium garnet according to which the single crystal boules of a relatively large diameter and outstandingly free from any crystal defects and inclusions are readily obtained. The improved method comprises keeping the melt of the oxide mixture formed in an iridium crucible for at least 15 hours in the molten state before crystal growing is started. It was also shown that addition of certain additive gases, e.g. water vapor, carbon dioxide and oxygen, to the gaseous atmosphere mainly composed of, for example, nitrogen, in which crystal growing was performed, in a limited proportion was effective to further improve the crystal quality and to decrease the particulate inclusions in the single crystal boules.

Single crystal growing of rare earth-gallium garnet

In the crystal growing of GGG (gadolinium gallium garnet) by the Czochralski technique from a melt of the oxide mixture of gadolinium and gallium, zinc is added to the oxide melt as a dopant element in a limited amount so that the danger of crack formation in the grown single crystals can be greatly decreased contributing to the improvement of the productivity. Moreover, the GGG single crystal grown with zinc doping has remarkably reduced light absorption in the wavelength region of around 300 nm responsible to the yellowish tint of the crystals.

Method for the preparation of single crystals of gadolinium gallium

The invention provides a method for surface-finishing of a single crystal wafer of a ferroelectric material into a substrate plate suitable for use, for example, as a SAW filter element which is mirror-polished only on one of the surfaces, the other surface having an adequate roughness. Different from conventional methods, the inventive method comprises the successive steps of (a) slicing a single crystal boule into wafers, (b) lapping of the wafer on both surfaces to impart adequate roughness to the surfaces, (c) chemically etching the thus lapped surfaces to remove the strain produced in the preceding mechanical working, and (d) mirror-polishing one of the thus etched surfaces so that high uniformity of the thickness and greatly decreased warping of the wafer can be ensured.

Method for the preparation of a ferroelectric substrate plate

The invention provides an artificial prosthetic member for bone substitute with a novel structure comprising a core, an outer layer covering the core made of metallic aluminum, preferably, formed by electrolytic plating, and a surface layer on the outer layer formed of an anodically oxidized aluminum oxide. The prosthetic member of the invention is very advantageous with high affinity to the living tissues and absence of elution of poisonous metallic ions.

Prosthetic substituted member for living body and a method for the

An efficient and economical method for the purification of hydrogen gas is proposed by use of an alloy of a rare earth metal with nickel and/or cobalt plus, optionally, iron, copper or chromium, utilizing the great selectivity of the alloy for the adsorption of hydrogen gas with very little adsorptivity for impurity gases commonly found in an impure hydrogen gas. The purification process is carried out by the pressurized adsorption of hydrogen on the alloy powder, followed by the recovery of high-purity hydrogen gas released from the alloy under reduced pressure or by heating. The alloy in the form of powder is preferably activated prior to use by repeated adsorption-desorption cycles of hydrogen on and from the alloy powder.

Rare earth-containing alloys and method for purification of hydrogen gas

Thermally insulating containers or the Dewar containers useful for shipping and storage of low-temperature liquefied gases, having double walls made of a metal, the space between the walls being evacuated, are provided, the thermal insulation properties of which are prevented from deterioration by putting in the vacuum space, a getter alloy composed of a ternary alloy expressed by the formula LaNi.sub.x Cr.sub.y, where x is a number from 1 to 6, both inclusive and y is a number from 0.1 to 2, both inclusive, working to adsorb traces of hydrogen coming out of the wall material. The alloy is preferably an activated one. The vacuum thermal insulation can further be improved by the presence of an adsorbent having a large specific area which serves to adsorb traces of gases other than hydrogen.

Growing community of inventors

Kanagawa, Japan

Susumu Sakaguchi