Nec Display Solutions, Ltd.

Hitachi, Ltd.

Mitsubishi Paper Mills Limited

Nec Viewtechnology, Ltd.

Susumu Ogawa

Takayuki Okamoto

Yuichiro Nara

Junsi Lee

Hideaki Senoh

Yukihiko Oota

Naoto Fukasawa

Mitsuhiro Shimizu

Takuji Katsutani

Kouji Idei

Masayuki Ageishi

Shigeo Inoue

Mariko Ouchi

Hiroshi Fukuda

Kenchi Ito

Hiromasa Takahashi

David Arfon Williams

Masaki Yamada

Hisashi Nagano

Tatsuya Tomaru

Hrvoje Petek

Tsunao Nagasaki

Masaru Andoh

Andrew Stuart Troup

Hideki Nomura

Lee Junsi

Albert Heberle

Tetsuya Nagata

Katsuyoshi Washio

Naoki Kato

Katsuya Miura

Yasushi Itou

Shigenori Sakai

Aleksey Andreev

Masayuki Agaeishi

Huajun Xu

Kiyotaka Hammura

David Williams

Tomonori Sekiguchi

As a technique for attaining a reduction in power consumption, there is a technique for reducing power consumption using a spin wave. No specific proposal concerning spin wave generation, spin wave detection, and a latch technique for information has been made. A device applies an electric field to a first electrode of a nonmagnetic material using a thin line-shaped stacked body including a first ferromagnetic layer and a nonmagnetic layer to thereby generate a spin wave in the first ferromagnetic layer, and detects a phase or amplitude of the spin wave propagated in the first ferromagnetic layer using a second electrode of a ferromagnetic material with a magnetoresistance effect.

Spin wave device and logic circuit using spin wave device

Projector

A spin-wave waveguide includes a ferromagnetic thin film resembling a wire in shape. A part of the ferromagnetic thin film, large in film thickness, is formed at one end of the ferromagnetic thin film, and a part of the ferromagnetic thin film, small in film thickness, and a part of the ferromagnetic thin film, large in film thickness, are alternately formed on the same plane, for at least not less than one cycle. A part of the ferromagnetic thin film, large in film thickness, is formed at the other end of the ferromagnetic thin film, wherein an insulating film, and an electrode film are stacked in this order on the ferromagnetic thin film in the part of the ferromagnetic thin film, large in film thickness.

Spin-wave waveguide and spin wave operation circuit

A magnetoresistance device comprises a substrate, an elongate semiconductor channel extending in a first direction and at least two conductive leads providing a set of contacts to the channel. The device may comprise an optional semiconductor shunt in contact with the channel. The optional shunt, channel and set of contacts are stacked relative to the substrate in a second direction which is perpendicular to the first direction and the surface of the substrate. The device has a side face running along the channel. The device is responsive to a magnetic field generally perpendicular to the side face.

Stacked magnetoresistance device responsive to a magnetic field generally perpendicular to a side face running along a channel of the device

An electronic device of the present application includes a case, leg that has a hollow stem portion, and leg fixing part. Leg fixing part is a part that is formed in one face of case and that has a hole into which leg is inserted and that includes case thread ridge portion formed on an inside face of the hole. Leg has first screw structure portion and second screw structure portion formed on a circumferential face of the stem portion thereof, first screw structure portion is formed of a plurality of turns of continuous thread ridge that can be screwed into case thread ridge portion, second screw structure portion is formed of one or more turns of thread ridge at the same screw pitch as first screw structure portion and screwed into case thread ridge portion before first screw structure portion is screwed when leg is inserted into the hole.

Electronic device

A device capable of exhibiting the extraordinary magnetoresistance (EMR) effect includes an elongate channel formed of silicon. A conductor comprising heavily doped silicon is connected to the channel along one side of the channel so as to provide a shunt. A gate arrangement including a gate electrode is provided on the channel. Applying a bias of appropriate polarity and sufficient magnitude to the gate electrode results in the formation of an inversion layer in the channel.

Magnetoresistance device

A magnetoresistance device has a channel extending between first and second ends in a first direction comprising non-ferromagnetic semiconducting material, such as silicon, a plurality of leads connected to and spaced apart along the channel, a gate structure for applying an electric field to the channel in a second direction which is substantially perpendicular to the first direction so as to form an inversion layer in the channel and a face which lies substantially in a plane defined by the first and second directions and which is configured such that an edge of the channel runs along the face.

Growing community of inventors

Tokyo, Japan

Susumu Ogawa