Asahi Glass Company, Limited

Susumu Nakagama

Akira Mitsui

Atsushi Hayashi

Hiroshi Ueda

Hidefumi Odaka

Tamotsu Morimoto

Koichi Kanda

Masao Higeta

Kouichi Kanda

Hideaki Miyazawa

Masahiro Fusen

Masato Kawasaki

Makoto Hiramoto

Provided is an electroconductive laminate having a substrate and an electroconductive film formed on the substrate, wherein the electroconductive film has a multilayer structure having an oxide layer and a metal layer alternately laminated from the substrate side in a total layer number of (2n+1) (wherein n is an integer of at least 1); the oxide layer predominantly contains zinc oxide and titanium oxide having a refractive index of at least 2.3; the oxide layer has an atomic ratio of titanium to a total amount of titanium and zinc of 15-50 atomic %; and the metal layer predominantly contains silver or a silver alloy. Also provided is a process for producing the electroconductive laminate.

Electroconductive laminate, and electromagnetic wave shielding film and protective plate for plasma display

To provide an electroconductive laminate excellent in electrical conductivity and visible light transparency, an electromagnetic wave shielding film for a plasma display, and a protective plate for a plasma display having excellent electromagnetic wave shielding properties, a broad transmission/reflection band and a high visible light transmittance. An electroconductive laminatecomprising a substrate, and an electroconductive filmhaving a three-layer structure having a first oxide layer, a metal layerand a second oxide layerlaminated sequentially from the substrateside, or having a 3&#xd7;n layer structure (wherein n is an integer of at least 2) having the above three-layer structure repeated, wherein the first oxide layercontains 'zinc oxide' and 'titanium oxide or niobium oxide', the metal layeris a layer containing silver, and the second oxide layercontains a mixture of zinc oxide and aluminum oxide, or the like.

Electroconductive laminate, and electromagnetic wave shielding film for plasma display and protective plate for plasma display

A sputtering target is provided that includes SiC and metallic Si and has an atomic ratio of C to Si of from 0.5 to 0.95 and a density of from 2.75&times;10 kg/m to 3.1&times;10 kg/m . The sputtering target is capable of forming at high speed a film that contains SiO as the main component and has a low refractive index. The sputtering target can be produced by a process in which a molded product of SiC is impregnated with molten Si.

Sputtering target, process for its production and film forming method

A process for producing sputtering targets, which comprises molding a mixture of a powder of a high-melting substance having a melting point of 900&deg; C. or above with a powder of a low-melting metal having a melting point of 700&deg; C. or below at a temperature below the melting point of the low-melting metal under heat and pressure.

Process for producing sputtering targets

Growing community of inventors

Takasago, Japan

Susumu Nakagama