Nippondenso Co., Ltd.

Denso Corporation

Susumu Kuroyanagi

Tetsuo Fujii

Yasuaki Makino

Seiki Aoyama

Yoshitaka Gotoh

Yukio Tsuzuki

Yukihiro Kato

Tomoatsu Makino

Osamu Ina

Ichiro Izawa

Ichirou Izawa

Minekazu Sakai

Akira Kuroyanagi

Shinji Yoshihara

Kingo Okada

Masaei Nozawa

Kenji Yagi

Izuru Shoji

Kazuo Kajimoto

Kiwamu Naito

Shigehiro Kasumi

Tomohiro Funahashi

Syuji Yamaguchi

Yasuki Makino

Shinichi Konda

Masaki Takashima

A rotational angle detecting device includes a sensor portion disposed on a shaft. The sensor portion includes longitudinal hall elements disposed perpendicular to each other for outputting a hall voltage proportional to a magnetic flux induced by a magnet disposed on the shaft. The device also includes an engagement mechanism for maintaining a positional relationship with the magnet in which a center portion of the sensor is aligned with a center portion of the magnet.

Rotational angle detecting device

A rotation sensor has a sensor and a processing circuit that are provided as an integrated circuit chip (IC chip). The sensor has a magnetic resistance element. The rotation sensor senses an angular change of a magnetic vector as a change of resistance. The rotation sensor is located to face a rotor, or a helical gear used in an automatic transmission. The magnetic resistance element is located such that a sensing plane thereof is parallel to a hypothetical plane perpendicular to the line of inclination of each tooth of the rotor.

Rotational position sensor including a helical gear rotor and a magnetic resistance element

A rotation object is made of a magnetic material and disposed within a predetermined range of an angle of rotation on a plane perpendicular to an axis of rotation. A bias magnet generates a bias magnetic field to the rotation body in a direction perpendicular to the axis of rotation. Magnetic resistance elements are disposed in the bias magnetic field on a plane including the axis of rotation at a position deviated from the position of the rotation object in the axial direction of the rotation body and inclined by about 45.degree. relative to a direction perpendicular to the axis of rotation.

Magnetoresistive type position sensor having bias magnetic and magnet

Magnetoresistive elements are disposed facing a gear to form a sensor for detecting rotation of the gear. The signal output from MRE sensor is an alternating amplitude signal. An operational amplifier has a differential gain exceeding its operational limit relative to the amplitude value of the sensor signal, and it amplifies and outputs the difference between the sensor signal and a reference voltage. Comparators judge whether an output of the operational amplifier is within a predetermined amplitude range relative to the amplitude center thereof. When the op-amp output deviates from the predetermined amplitude range, transistors either charge or discharge a capacitor, so that the reference voltage can be changed closer to the output of the operational amplifier. Another comparator compares the output signal of the operational amplifier with a threshold value to output a binary-valued signal.

Sensor signal processor having accurate digitizing capabilities

A magnetic detector which is small in size and is capable of preventing the occurrence of deformation in the waveform representing a change in the resistance. A bias magnet 2 is adhered to the support plate 1. A bias magnetic field is generated by the bias magnet 2 toward a gear 7. A substrate 3 is adhered onto the support plate 1, and magneto resistance elements are formed on the substrate 3 by vacuum evaporation. The magneto resistance elements are disposed in parallel with the magnetized surface of the bias magnet 2. The magneto resistance elements are disposed being tilted by about 45 degrees with respect to a vector that is in parallel with the N-pole surface of the bias magnet 2 in the bias magnetic field and is directed toward the outer peripheral edge. Due to the revolution of the gear 7, a change in the resistance takes place in the magneto resistance elements due to a change in the vector which is parallel with the N-pole surface of the bias magnet 2 in the bias magnetic field generated by the bias magnet 2 towards gear 7 and is directed toward the outer peripheral edge.

Magnetic detector having a bias magnet and magnetoresistive elements

Rotational speed of a vehicle speed detecting gear 1 is detected by a detection element 2 using an MRE or the like and the detected signal is waveform-shaped by a waveform shaping circuit 3 to serve as a vehicle-speed pulse signal. The cycle of the vehicle-speed pulse signal is detected by a sampling circuit 4. The detected cycle of the pulse signal is multiplied by a predetermined multiplier in a multiplication circuit 6 and the multiplication result is divided by a predetermined divisor in a diving and pulsing circuit 8. Then, a pulse signal having the cycle equivalent to the division result is output as a divided vehicle-speed pulse signal.

Vehicle speed detecting apparatus

A magnetic detection device including a biasing magnet for generating a bias magnetic field directed to an object of detection having a magnetic material; a magnetoresistance effective element disposed at an inclination of about 45.degree. to the direction of the bias magnetic field to provide a change in resistance caused by the bias magnetic field in accordance with movement of the object of detection, so as to detect a change in state of the bias magnetic field via the change in resistance of the magnetoresistance effective element; and the biasing magnet having a hollow portion containing a holder for holding the magnetoresistance effective element in a position between a surface of the biasing magnet and the object of detection and close to the surface of the biasing element.

Magnetic detection device having a magnet including a stepped portion

An oil deterioration detector comprising a sensitive electrode whose electric potential varies in response to acidity and/or basicity of oil to be measured, and a reference electrode associated with this sensitive electrode. An electrically conductive housing accommodates the sensitive electrode and the reference electrode together with the oil. A potential difference detector detects oil deterioration by measuring a potential difference between the sensitive electrode and the reference electrode. And, an insulating member is interposed between these electrodes and the electrically conductive housing for electrically insulating these electrodes from the electrically conductive housing. The reference electrode is grounded together with the electrically conductive housing. An insulating, hydrophilic porous member would be interposed between the sensitive electrode and the reference electrode.

Oil deterioration detector

Device including a strain generating portion supported at least at one end on a substrate and formed in a displaceable manner with respect to the substrate in a cavity of the substrate. A semiconductor strain sensing element, which is disposed at the strain generating portion, detects the amount of strain of the strain generating portion. A support is disposed at a connection point between the strain generating portion and the substrate so as to reinforce the connection point.

Strain sensing device

A peak hold circuit 11 holds a peak value of an output signal from a rotating angle sensor 6. A bottom hold circuit 12 holds a bottom value of the output signal from the rotating angle sensor 6. A threshold value is set from the peak value by the peak hold circuit 11 and the bottom value by the bottom hold circuit 12 by resistors 24 to 27, analog switches 28 and 29 and a NOT circuit 31. A comparator 10 compares the output signal of the rotating angle sensor 6 with the set value thus set, and outputs a binary signal (digitized signal) in accordance with the comparison result.

MRE sensor signal detector

A semiconductor pressure sensor of this invention is intended to provide a semiconductor pressure sensor having an excellent electrical isolation between the supporting means of the semiconductor pressure sensor and the semiconductor substrate, the semiconductor pressure sensor basically comprising a semiconductor substrate having a first semiconductor region in which; at least a semiconductor device is formed, a second semiconductor region and an isolated layer buried between the first and second semiconductor regions, a cavity provided in the second semiconductor region, the opening thereof existing on the mail surface of the second semiconductor region and a strain detecting portion consisting of the semiconductor device and provided in the first semiconductor region opposite to the cavity. The semiconductor pressure sensor is featured in that at least one of the outer peripheral side surfaces of the first and the second semiconductor regions is formed inside of the outermost peripheral side surface of the isolation layer.

Method of manufacturing a semiconductor pressure sensor

A semiconductor sensor for an accelerometer including a beam portion, consisting of a thin beam portion and a thick beam portion and supported by a solid member through the end of the thin beam portion, and a stopper portion provided at a position on an imaginary line along which a center of gravity of the thick beam portion moves. These components are integrally formed in a silicon substrate. Excessive displacement of the beam portion when excessive acceleration is applied is effectively suppressed by the stopper portion, and breakage of the thin beam portion due to excessive acceleration can be avoided.

Semiconductor sensor for accelerometer

Disclosed is a semiconductor device which comprises a substrate, an insulating film formed at a predetermined region in the substrate or on the main surface of the substrate, a polycrystalline semiconductor layer formed on at least the insulating film, a single crystal semiconductor layer formed on at least the polycrystalline semiconductor layer, an isolation region formed to extend from the top main surface of the single crystal semiconductor layer to at least the surface of the insulating film, through the polycrystalline semiconductor layer, to electrically isolate a portion formed in the single crystal semiconductor layer surrounded by the isolation region from another portion formed in the single crystal semiconductor layer and not surrounded by the isolation region, at least a semiconductor device formed within the portion surrounded by the isolation region. This semiconductor device has an additional characteristic in that another semiconductor device using another main surface of the substrate as the electrode is provided on the surface of the substrate and the single crystal semiconductor layer, and the plolycrystalline semiconductor layer serves to terminate the electric line of force emitted from the substrate, and therefore, the single crystal semiconductor layer mounted on the polycrystalline semiconductor layer is not affected by the electric line of force. Consequently, a semiconductor device which can operate effectively without being influenced by variations of the electric potential in the substrate can be obtained, and further, an intelligent type power device can be formed in which the power semiconductor device and the semiconductor device controlling the power device are formed in the same substrate but are completely isolated from each other.

Semiconductor device which includes multiple isolated semiconductor

A semiconductor pressure sensor of this invention is intended to provide a semiconductor pressure sensor having an excellent electrical isolation between the supporting means of the semiconductor pressure sensor and the semiconductor substrate, the semiconductor pressure sensor basically comprising a semiconductor substrate having a first semiconductor region in which at least a semiconductor device is formed, a second semiconductor region and an isolated layer buried between the first and second semiconductor regions, a cavity provided in the second semiconductor region, the opening thereof existing on the main surface of the second semiconductor region and a strain detecting portion consisting of the semiconductor device and provided in the first semiconductor region opposite to the cavity. The semiconductor pressure sensor is featured in that at least one of the outer peripheral side surfaces of the first and the second semiconductor regions is formed inside of the outermost peripheral side surface of the isolation layer.

Semiconductor pressure sensor and method of manufacturing same

Herein disclosed is a semiconductor pressure sensor and a method of manufacture. The sensor includes a plate having a recess in its main surface. A diaphragm has a lower surface therof bonded to a first main surface of the plate and formed so as to have an upper surface having no holes therein. A piezoresistive layer is formed so as to be in contact with the diaphragm and is positioned so as to be at least partially over the recess. The resistance of the piezoresistive layer provides an indication of pressure applied to the diaphragm. The manufacturing method includes forming a piezoresistive layer of a single crystal substrate in a diaphragm without any recrystallization.

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Anjo, Japan

Susumu Kuroyanagi