Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Panasonic Corporation

Susumu Koike

Hitoo Iwasa

Toshio Matsuda

Toshiya Yokogawa

Akihiko Ishibashi

Kiyoshi Ohnaka

Kenichi Matsuda

Gota Kano

Ginjiro Kambara

Toshiharu Kawabata

Daisuke Ueda

Masaaki Suzuki

Hideo Nagai

Kaname Motoyoshi

Katsushi Tara

Shinichi Takigawa

Tadaaki Ikeda

Morio Inoue

Iwao Teramoto

Toshiharu Tambo

Shotaro Umebachi

Tamotsu Uragaki

Hidetaka Hashimoto

Kosaku Uchida

Tsutomu Kobayashi

A semiconductor light-emitting devicehas a semiconductor chipfor emitting light having a wavelength in blue to ultraviolet regions, and a sealing portionformed in at least a partial region on a passage path on which the light is passed. The sealing portionincludes a sealing materialwhich is a composite material including a matrix materialmade of a resin, nano-particlesmade of an inorganic material which are distributed in the matrix material, the nano-particlehaving an effective particle size which is &#xbc; or less of the wavelength of the light in the matrix material, and a fluorescent material

Semiconductor light-emitting device

The present invention relates to a semiconductor light emitting device comprising a sapphire substrate; a u-GaN layerthat is formed on top of the substrateand that comprises a plurality of concave portionsformed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layerformed on the u-Ga layer; a layered structure that is formed on the u-GaN layercomprises an n-GaN layer, an active layer, and a p-GaN layer; an n-type electrodeformed on the n-GaN layerexposed by removing a potion of the layered structure; and a transparent p-type electrodeformed on the p-GaN layer, wherein the p-type electrodeis an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layerand the concave portions

Semiconductor light emitting device and fabrication method thereof

A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through the light extraction layer.

Semiconductor light-emitting device and method for fabricating the same

The dual wavelength semiconductor laser source for an optical pickup includes: two semiconductor laser elements outputting laser beams having oscillating wavelengths different from each other; and a multiplexing waveguide, formed inside of a photonic crystal having a photonic band gap, having one output end outputting laser light at one end surface and two input ends at the other end surfaces. Output beams of the two semiconductor laser elements are coupled to the respective two input ends of the multiplexing waveguide and the two beams are outputted from the one output end of the multiplexing waveguide.

Dual wavelength semiconductor laser source for optical pickup

This invention relates to a method of manufacturing an Arsenic-including compound semiconductor device comprising the steps of forming an ion implantation layer in a specified region of an As compound semiconductor wafer, forming an As layer on the surface of the wafer, and annealing the water. In this manner, As evaporation in the ion implantation layer by annealing heat may be prevented. Accordingly, sufficient substitution of the implanted ions and the ions other than As ions composing the As compound may be achieved, thereby preventing lowering of the electrical activation of the As compound semiconductor device. In addition, the electrical activation becomes uniform over the whole area of the water.

Method of manufacturing an arsenic-including compound semiconductor

Pure-green light emitting diodes include an n-type GaP layer formed on an n-type GaP substrate and a p-type GaP layer formed by using a liquid phase epitaxial method, the average donor concentration of the p-type GaP layer being less than or equal to 5.times.10.sup.16 cm.sup.-3. Liquid phase crystal growth of the above p-type GaP layer is realized by applying a method of keeping the melt used for the liquid phase crystal growth of the n-type GaP layer at a constant temperature and the ambient atmosphere at a reduced pressure for a prescribed period of time thereby to volatilize donor impurities from the melt and to compensate the donor impurities. Pure-green light emitting diodes easily distinguishable from yellow-green and having high brightness can be manufactured by applying the over-compensation method which is suitable for mass production.

Pure green light emitting diodes and method of manufacturing the same

In a method of manufacturing pure green light emitting diodes, after an n-type GaP epitaxial layer with thickness larger than or equal to a value for which the density of dislocation on the surface becomes less than or equal to 1.times.10.sup.4 cm.sup.-2 is grown on an n-type GaP substrate, a p-type GaP epitaxial layer is grown on the above n-type epitaxial layer. Even with the use of a GaP substrate with normal dislocation density, the density of dislocation in the neighborhood of the p-n junction becomes low and therefore GaP green light emitting diodes with high intensity of light emission are obtained.

Manufacturing green light emitting diodes

A substrate holder for liquid phase epitaxial growth comprising

Substrate holder for liquid phase epitaxial growth

A method of making a light emitting diode by a liquid phase epitaxial growth is disclosed, the method comprising the steps of growing a first p-type epitaxial layer from a gallium melt containing Zn, and Ga.sub.2 O.sub.3 and GaP on an n-type GaP substrate, or on an n-type epitaxial layer formed on an n-type GaP substrate, at a cooling rate greater than 3.degree. C./min., and growing a second p-type epitaxial layer from the gallium melt on the first p-type epitaxial layer at a cooling rate less than 1.5.degree. C./min. This procedure makes the p-type carrier density high at the surface region of the second p-type epitaxial layer and the density of Zn-O pairs high in the first p-type epitaxial layer.

Method of making a light emitting diode

A method for growing semiconductor epitaxial layers for manufacturing semiconductor devices such as light emitting diodes, characterized by

Method for growing semiconductor epitaxial layers

A method of treating semiconductor substrate comprising the step of after epitaxial growth of III-V compound semiconductor layers on a substrate by a liquid phase epitaxial growth method using gallium as solvent, the substrate is treated by an etchant comprising phosphoric acid, acetic acid and nitric acid thereby selectively removing residue stains of gallium on the surface of the substrate.

Etching of gallium stains in liquid phase epitoxy

The present invention provides a memory device of MNOS FET type wherein a high concentration part and a low concentration part contact each other in the source region and the drain region, and further, double layered insulation films under the gate electrode extending across the source region and drain region are made to contact only the lower concentration part, so that an acceptor impurity is prevented from mixing into the double layered insulation films from the source region and drain region, thus greatly improving the life (number of repeated uses) of the device.

Non-volatile memory device

A new type of nonvolatile static read/write memory cell constructed with one MOS transistor and one MNOS transistor (4) is disclosed. The MNOS transistor (4) and the MOS transistor (3) together with a load resistor are complementary combined to offer binary states in the .LAMBDA.-shaped I-V curve for memory operation under normal power supply. Upon power failure, the MNOS transistor (4) acts as a backing-up element for nonvolatility. By impressing a control pulse on the drain of the MNOS transistor (4) the MNOS transistor changes from the depletion mode to the enhancement mode, thereby storing the last memory contents before the power failure. The stored nonvolatile memory contents can be easily retrieved. Thus a small size static random access memory is provided. The new cell is characterized by advantageous features such as small cell size, simple peripheral circuit, operation with a unipolar power supply and low standby power consumption.

Growing community of inventors

Osaka, Japan

Susumu Koike