Hitachi, Ltd.

Renesas Technology Corp.

Renesas Electronics Corporation

Susumu Kasukabe

Terutaka Mori

Hidetaka Shigi

Takayoshi Watanabe

Akihiko Ariga

Akio Hasebe

Yasunori Narizuka

Yasuhiro Motoyama

Yuji Wada

Makoto Kitano

Ryuji Kohno

Tetsuo Kumazawa

Kunio Matsumoto

Naoto Ban

Ryuji Kono

Teruo Shoji

Shuji Shibuya

Takehiko Hasebe

Yutaka Akiba

Yoshinori Deguchi

Akira Yabushita

Naoki Okamoto

Masakazu Sueyoshi

Takeshi Yamamoto

Hitoshi Yokono

Masao Mitani

Koji Suzuki

Tsuyoshi Fujita

Kazuo Hirota

Akio Fujiwara

Masayoshi Okamoto

Ryuichi Takagi

Motoji Murakami

Hironobu Okino

Masasi Ookubo

A frame bonded and fixed to a back face of a probe sheet so as to surround a group of pyramid-shaped or truncated pyramid-shaped contact terminals collectively formed at a central region portion of the probe sheet on a probing side thereof is protruded from a multi-layered wiring board, and pressing force is imparted to the frame and a pressing piece at a central portion by a plurality of guide pins having spring property so as to tilt finely.

Probe card, semiconductor inspecting apparatus, and manufacturing method of semiconductor device

A silicon substrate is used as a mold, and thin films such as metal films and polyimide films are sequentially stacked on the silicon substrate by using photolithography techniques, thereby forming a probe sheet having contact terminals having a pyramidal shape or a truncated pyramidal shape disposed at distal ends of cantilever beam structures. A fixing substrate is further fixed to the probe sheet, and then, the formed probe sheet is sequentially stacked and formed on the silicon substrate, the substrate is fixed, and the silicon substrate and predetermined polyimide films are removed by etching, thereby forming the group of contact terminals with the cantilever beam structures at a time.

Probe card, manufacturing method of probe card, semiconductor inspection apparatus and manufacturing method of semiconductor device

A manufacturing method of a semiconductor device employing a semiconductor inspection apparatus to accurately inspect semiconductor elements while still in the wafer state, the semiconductor inspection apparatus including: a probe sheethaving contact terminalswhich contact electrodesof a waferand contact bumpselectrically connected to respective contact terminals; and a probe sheetwhich is backed by a metal filmand having contact electrodeswhich contact the contact bumpsof the probe sheetand peripheral electrodeselectrically connected to the respective contact electrodes, the waferis interposed between the probe sheetand the supporting membervia the probe sheetby reducing pressure through vacuuming, and the contact terminalswhich have a pyramidal or truncated shape are contacted to the electrodesof the waferat a desired atmospheric pressure, thereby performing the inspection.

Probe cassette, semiconductor inspection apparatus and manufacturing method of semiconductor device

To achieve high speed exchange of electrical signals between a connection device and a tester, a support member is provided for supporting the connection device, a plurality of pointed contact terminals are arrayed in an area on the probing side, a multiplayer film is provided having a plurality of lead out wires electrically connected to the contact terminals and a ground layer enclosing an insulation layer, and a frame is clamped on the rear side of the multiplayer film. A clamping member is provided on the frame to make the multiplayer film project out to eliminate slack in the multiplayer film. A contact pressure means is provided for making the tips of the contact terminals contact each of the electrodes with predetermined contact pressure from the support member to the clamping member. A compliance mechanism is provided so that the contact terminal group of the tip surface is arrayed in parallel with the electrode group terminal surface, so that the tips of the contact terminals contact the surface of the electrodes with an equal pressure.

Connection device and test system

By using a membrane probe formed by using a manufacturing technique for semiconductor integrated circuit devices, the yield of probing collectively performed on a plurality of chips is to be enhanced. A probe card is formed by using a plurality of pushers, each pusher being formed of a POGO pin insulator, POGO pins, an FPC connector, a membrane probe HMS, an impact easing sheet, an impact easing plate, a chip condenser YRS and so on, wherein one or two POGO pins press a plurality of metal films arranged like islands. One or more cuts are made into what matches the chip to be tested in the area of the membrane probe in a direction substantially parallel to the extending direction of wiring electrically connected to probes formed in the membrane probe.

Manufacturing method of semiconductor integrated circuit device

In a prove card comprising: a probe sheet having a contact terminal contacting with an electrode provided on a wafer, a wiring led from the contact terminal, and an electrode electrically connected to the wiring; and a multilayered wiring substrate having an electrode electrically connected to the electrode of the probe sheet, wherein a contact between the contact terminal and the electrode of the wafer is established by one or more adhesion holder for pressing, from the backside of a terminal group of the terminal contacts, the terminal group via a press block with a spring to contact with the electrode pad. A device in which the probe sheet is attached to the adhesion holder and a plurality of chips are tested simultaneously by combining the adhesion holder.

Probe sheet adhesion holder, probe card, semiconductor test device, and manufacturing method of semiconductor device

A probe card, and a probe sheet used for the method of testing (producing) a semiconductor device using the probe card, include first contact terminals in electrical contact with the electrodes of a test object formed at a narrow pitch, wires connected with and led from the first contact terminals, and second contact terminals in electrical contact with the wires. The first and second contact terminals are formed using the etching holes of a crystalline member and lined with a metal sheet.

Probe card and semiconductor testing device using probe sheet or probe card semiconductor device producing method

A semiconductor device capable of facilitating high density mounting at low cost without causing any defective conduction at the time of connection to a substrate, a mounting structure thereof and a method of fabrication thereof, characterized in that pyramidal bump electrodes are bonded onto pad electrodes arranged on a semiconductor chip to form the semiconductor device.

Method for producing a semiconductor device with pyramidal bump electrodes bonded onto pad electrodes arranged on a semiconductor chip

The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.

Fabrication method of semiconductor integrated circuit device

When electrical properties of semiconductor chips of a semiconductor wafer are inspected by bringing plural contact terminals disposed on the principal surface of a probe sheet of a probe cassette constituting a semiconductor inspection apparatus into contact with plural electrodes of the plural semiconductor chips on the principal surface of the semiconductor wafer which is disposed so as to face the principal surface of the probe sheet, the air pressure of the space formed between the facing surfaces of the principal surface of the probe sheet and the principal surface of the semiconductor wafer is reduced so as to suck the semiconductor wafer toward the side of the principal surface of the probe sheet and deform mainly the semiconductor wafer, thereby pressing the plural electrodes of the plural semiconductor chips of the semiconductor wafer against the plural facing contact terminals of the principal surface of the probe sheet.

Semiconductor inspection apparatus and manufacturing method of semiconductor device

Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.

Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step

A probe card has first contact terminals electrically connected to the fine-pitch electrodes of a test target; wirings drawn from the first contact terminals; and second contact terminals electrically connected to the wirings, wherein the first contact terminals are formed each using an anisotropically etched hole in a crystalline substrate, and a semiconductor device test method (fabrication method) using the probe card.

Probe sheet, probe card, semiconductor test equipment and semiconductor device fabrication method

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Yokohama, Japan

Susumu Kasukabe