Tdk Corporation

Adk Corporation

Susumu Haratani

Junji Tominaga

Ryo Inaba

Tokuhiko Handa

Sachio Tsuboike

Takashi Kikukawa

Hitoshi Yamaguchi

Sumiko Kitagawa

Haruki Yuga

Tsutomu Aoyama

Masahiro Miyazaki

Takashi Asatani

Shigeru Shimura

Naoki Ohta

Isamu Sato

Hiroyuki Arioka

Keiji Koga

Yuji Kakinuma

Joichiro Ezaki

Tohru Oikawa

Tsuneo Kuwahara

Yoshio Sase

What provided is a biosensor including: a substrate having a surface with first and second regions adjacent each other; a magnetoresistance effect element disposed on the first region; a soft magnetic thin film on the second region; a protective film disposed on both the first region and the second region, covering a surface of the soft magnetic thin film, and disposed on the top part of the second region and contains an affinity substance recognizing the biomolecule on the outer surface of the second region exclusively; and an MR cover film disposed on at least the top part of the first region, disposed on the protective film above the magnetoresistance effect element, and being free of the affinity substance, wherein the soft magnetic thin film transmits an in-plane component of a stray magnetic field of magnetic beads to the magnetoresistance effect element.

Biosensor and biochip

A chemical sensor that enables high detection accuracy. A chemical sensor includes a substrate, a magnetoresistance-effect element disposed over the substrate, a first film disposed over the magnetoresistance-effect element, and a second film disposed in a region in the vicinity of the magnetoresistance-effect element or over a region in the vicinity of the magnetoresistance-effect element, wherein the second film has higher solubility in a specific liquid than the first film.

Chemical sensor

A chemical sensor that enables high detection accuracy that includes a soft-magnetic-material film, a magnetoresistance-effect element, a first film disposed over the soft-magnetic-material film, and a second film disposed over the magnetoresistance-effect element, wherein, when viewed from a direction perpendicular to the film surface of the soft-magnetic-material film, the soft-magnetic-material film is disposed at least partially so as not to overlap the magnetoresistance-effect element; when viewed from the direction perpendicular to the film surface of the soft-magnetic-material film, the magnetoresistance-effect element is disposed at least partially so as not to overlap the soft-magnetic-material film; and the second film has higher solubility in a specific liquid than the first film.

To provide a chemical sensor that enables high detection accuracy. A chemical sensor includes a substrate, two or more magnetoresistance-effect elements disposed side by side in a substrate in-plane direction over the substrate, a first film disposed over a region between the magnetoresistance-effect elements adjacent to each other, and a second film disposed over the magnetoresistance-effect elements, wherein the second film has higher solubility in a specific liquid than the first film.

A sensor includes: a substrate; a first magnetoresistance element and a second magnetoresistance element, each of which is a magnetoresistance element whose resistance value measured changes depending on a direction of an input magnetic field; and a soft magnetic thin film disposed adjacent to the first and second magnetoresistance elements wherein one of the first and second magnetoresistance elements is positioned on one of end sides of the soft magnetic thin film and other of the first and second magnetoresistance elements is positioned on other of the end sides of the soft magnetic thin film in a plan view in a direction perpendicular to a film surface of the soft magnetic thin film.

Biosensor, method for detecting biomolecules, and biochip

A current sensor includes first to fourth magneto-resistive elements each having a resistance value; and a compensation current line applying a compensation magnetic field to the magneto-resistive elements. A bridge circuit is formed by the magneto-resistive elements. Resistance values of the first and third magneto-resistive elements change together in one increasing/decreasing direction. Resistance values of the second and fourth magneto-resistive elements change together in the other increasing/decreasing direction. The compensation current is generated by a potential difference between the first and second junctions in response to application of voltage between the third and fourth junctions. The compensation current line includes first to fourth line portions. Each line portion extends in the same direction as the extending direction of the magneto-resistive elements, overlaps the corresponding magneto-resistive elements, and. The current-to-be-detected is detected based on the compensation current.

Current sensor

A signal transmission device includes: an input signal conductor in which an input signal current flows and thereby generating an input signal magnetic field; a magnetically-biasing conductor in which a biasing current flows and thereby generating a biasing magnetic field; and one or more magnetoresistive elements in each of which a sensing current flows and thereby generating a self-biasing magnetic field, and each including a magnetization free layer having a magnetization direction which varies in response to the input signal magnetic field, the biasing magnetic field, and the self-biasing magnetic field. Each of the biasing magnetic field and the self-biasing magnetic field is applied to the magnetization free layer in a same direction to each other.

Non-contact signal transmission device having a magnetoresistive element for communicating between mutually insulated electrical circuits

The magnetic sensor comprises a spin-valve GMR including a free layer having an elongated form as seen in a laminating direction and a permanent magnet layer having an elongated form as seen in the laminating direction. The permanent magnet layer is arranged in parallel with the free layer.

Magnetic sensor including a spin-valve GMR device

A magnetic coupler having higher response is provided. The magnetic coupler includes a thin film coil wound in a first layer; a first MR element being disposed in a second layer, and detecting an induced magnetic field generated by a signal current flowing through the thin film coil; and yokes being disposed close to the first MR element, and including a soft magnetic material. The first MR element is disposed in a position corresponding to a linear region of the thin film coil in a stacking direction. The yokes are disposed at both of an inner turn side and an outer turn side of the thin film coil in a manner of interposing the first MR element in the second layer. Thus, reduction in intensity of the induced magnetic field is suppressed, and intensity distribution of the induced magnetic field becomes flatter.

Magnetic coupler

A magnetic memory is less susceptible to external magnetic fields and, thus, to writing errors and other adverse effects caused by external magnetic fields. In the magnetic memory, a magnetoresistive element is arranged adjacent to a part of a conductor line. A shield structure is also arranged to shield the magnetoresistive element against external magnetic fields generated by factors other then the part of the line.

Magnetic memory

In the magnetic storage device, magnetization characteristics during write cycles are homogenized, and write cycles are carried out efficiently. In the magnetic storage device, the soft magnetic body is formed so as to cover the line either totally or partially, and the anti-ferromagnetic layer is formed on the outer surface of this soft magnetic body. Furthermore, the magneto-resistive element is disposed in the vicinity of the line. Suppose the case where the exchange coupling energy at the interface between the soft magnetic body and the anti-ferromagnetic layer is J (erg/cm), the saturation magnetization of the soft magnetic body is Ms (emu/cc), and the coercive force of the soft magnetic body is Hc (Oe). Then, the thickness t (cm) of the soft magnetic body is selected to be such that t&#x3c;J/(Hc&#xb7;Ms).

Magnetic storage device and method for producing the same

In a magnetic memory, a magneto-resistivity effect elementis disposed adjacently to a wirefor producing a writing magnetic field and further a ferromagnetic bodyis disposed so as to cover at least part of the wireand consequently orient the state X of magnetization of this ferromagnetic bodyin one direction. According to this invention, it is made possible to homogenize the magnetic property during the course of writing and implement the writing work efficiently.

Magnetic memory including ferromagnetic yoke and antiferromagnetic layer

A magnetic storage cell being capable of stable writing and having little adverse influence on an adjacent magnetic storage cell, and a magnetic memory device using the magnetic storage cell, and its manufacturing method are provided. In the invention, a plurality of TMR devices () () each including a TMR film (S) including a connecting portion () of which the magnetization direction is changed by an external magnetic field and a second magnetic layer () and allowing a current to flow therethrough in a direction perpendicular to a laminate surface, and a toroidal magnetic layer () disposed on a surface of the TMR film (S) so that a direction along the laminate surface is an axial direction and a write bit line () and a write word line () penetrate through the toroidal magnetic layer () are included, and the TMR devices (), () share a part of the toroidal magnetic layer () between them. Thereby, a decline in the magnitude of a circulating magnetic field in a closed magnetic path can be prevented, and the magnetizations of the connecting portion () and the second magnetic layer () can be reversed by a smaller write current.

Magnetic storage cell, magnetic memory device and magnetic memory device manufacturing method

A magnetic storage device includes a magnetic yoke. A maximum thickness of each open end of the magnetic yoke in a diameter direction of the magnetic yoke is set to be larger than a maximum thickness of a second magnetic layer of a magnetoresistive element in the diameter direction of the magnetic yoke, thereby materializing the shape of the magnetic yoke. Moreover, a magnetic field generated from the magnetic yoke can be increased by optimization of the shape of the magnetic yoke, thereby reducing writing current.

Magnetic storage device

A magnetic memoryhaving a wireextended in a direction of arbitrary decision, an electro-resistivity effect elementdisposed adjacently to the wire, and a counterelement side yokeB disposed adjacently on the side opposite the magneto-resistivity effect elementin the wireand having the thickness of the counterelement side yokeB so set as to be larger than 50 nm and smaller than 150 nm. Owing to conformity with this invention, this magnetic memory is enabled to homogenize the magnetization property during the course of writing operation and perform the writing work with a low electric current.

Growing community of inventors

Tokyo, Japan

Susumu Haratani