Tdk Corporation

Sae Magnetics (h.k.) Limited

Susumu Aoki

Kosuke Tanaka

Tetsuya Roppongi

Shinji Hara

Daisuke Miyauchi

Eiji Komura

Naoki Ohta

Tsutomu Chou

Maiko Shirokawa

Yuichi Watabe

Yasuyuki Notsuke

Kei Hirata

Norikazu Ota

Keita Kawamori

Takeshi Tsutsumi

Makoto Isogai

Koji Shimazawa

Seiichi Takayama

Kazuya Maekawa

Naoto Matono

Katsuki Kurihara

Takafumi Kobayashi

Takahiko Izawa

Reiichi Kurumisawa

Hiroki Kawato

Akimasa Kaizu

Hideaki Fukuzawa

Akifumi Kamijima

Tomohito Mizuno

Kazumasa Fukuda

Yuji Kakinuma

Tetsuya Shibata

Katsumichi Tagami

Yoshikazu Sato

Tatsuya Harada

Ryo Hosoi

Hisayoshi Watanabe

Hiroki Matsukuma

Rina Kaji

Kenji Takeo

Takeshi Nojiri

The present invention includes an electromagnetic wave detector, and a pair of arm portions and that are positioned on both sides with the electromagnetic wave detector interposed therebetween. The electromagnetic wave detector includes a temperature detection element, and electromagnetic wave absorbers which cover at least a part of the temperature detection element. Each of the arm portions includes a conductor layer which is in a line shape and electrically connected to the temperature detection element, and dielectric layers which are disposed on both sides of the conductor layer. In a short direction of the dielectric layers in a plan view, the conductor layer has a shape protruding outward beyond both end portions of the dielectric layers in the short direction.

Structure body and electromagnetic wave sensor

A structure body includes: an electromagnetic wave detector; and a pair of arm portions that are positioned on both sides with the electromagnetic wave detector interposed therebetween. The electromagnetic wave detector includes a temperature detection element and an electromagnetic wave absorber which covers at least a part of the temperature detection element. Each of the arm portions includes a wiring layer which is in a line shape and electrically connected to the temperature detection element, and protective layers, a part of each of which is disposed on corresponding one of both sides of the wiring layer. The protective layers are made of a material having a lower thermal conductivity than the wiring layer. In a short direction of the protective layers in a plan view, the wiring layer is positioned on an inward side of both end portions of the protective layers in the short direction.

An electromagnetic wave sensor has electromagnetic wave absorbers disposed side by side in first and second directions, temperature detection portions held by the respective electromagnetic wave absorbers and sets of two arm portions connected to each of the electromagnetic wave absorbers at two connection portions. In a plan view, the arm portions have two first extending portions extending from the connection portions in directions of which components in the second direction are opposite to each other, and two second extending portions extending from the first extending portions in directions of which components in the first direction are opposite to each other. Four sides of a rectangle circumscribing each of the electromagnetic wave absorbers with a smallest area are inclined with respect to the first direction in directions in which each of the electromagnetic wave absorbers approaches the second extending portions with the connection portions as fulcrums.

Electromagnetic wave sensor

An electromagnetic wave sensor includes a substrate having transmittance of electromagnetic waves having a specific wavelength, an insulator layer provided on one surface side of the substrate, a thermistor film disposed to have a space between the thermistor film and one surface of the substrate, and a wiring part provided inside or on a surface of the insulator layer and electrically connected to the thermistor film, wherein a transmittance of the electromagnetic waves at a portion facing the thermistor film is relatively higher than a transmittance of the electromagnetic waves at a portion where the wiring part is provided in a layer in which the insulator layer is provided.

An electromagnetic wave sensorhas electromagnetic wave absorbers disposed side by side in first and second directions, temperature detection portions held by the respective electromagnetic wave absorbers and sets of two arm portions connected to each electromagnetic wave absorber at two connection portions. In a plan view, the arm portions have two first extending portions extending from the connection portions in directions of which components in the second direction are opposite to each other, and two second extending portions extending from the first extending portions in directions of which components in the first direction are opposite to each other. Four sides of a rectangle circumscribing each of the electromagnetic wave absorbers with a smallest area are inclined with respect to the first direction in directions in which each electromagnetic wave absorber is away from the second extending portions with the connection portions as fulcrums.

The light detection element includes a magnetic element and an optical waveguide. The magnetic element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The optical waveguide includes at least a core and a cladding covering at least a part of the core. Light that has propagated through the optical waveguide is applied to the magnetic element.

Light detection element

A thermistor element includes: a thermistor film; a first electrode provided in contact with one surface of the thermistor film; and a pair of second electrodes provided in contact with an other surface of the thermistor film, wherein the thermistor film is provided to cover a periphery of the first electrode.

Thermistor element and electromagnetic wave sensor

A thermistor element includes: a thermistor film; a pair of first electrodes in contact with one surface of the thermistor film; an insulation film opposite to a contact side of the pair of first electrodes, the contact side on which the pair of first electrodes is in contact with the thermistor film; and at least one opening portion located in a region which overlaps each of the first electrodes when viewed in a plan view and passing through the insulation film. Each first electrode has a first portion located where each of the first electrodes and the opening portion overlap when viewed in a plan view and a second portion outside of where each of the first electrodes and the opening portion overlap when viewed in a plan view and is over the first portion and second portion to be in contact with the one surface of the thermistor film.

A thermistor element includes a thermistor film, a first electrode provided in contact with one surface of the thermistor film, and a pair of second electrodes provided in contact with the other surface of the thermistor film, wherein the thermistor film includes an oxide having a spinel crystal structure and having a [111] preferred orientation in a film thickness direction.

A resistive element array circuit includes word lines, bit lines, resistive elements, a selector, a differential amplifier, and a ground terminal. The word lines are coupled to a power supply. The resistive elements are each disposed at an intersection of corresponding one of the word lines and corresponding one of the bit lines. The selector is configured to select one word line and one bit line. The differential amplifier includes a positive input terminal configured to be coupled to the selected one of the bit lines which is selected by the selector, a negative input terminal configured to be coupled to non-selected one of the bit lines which is not selected by the selector and to non-selected one of the word lines which is not selected by the selector, an output terminal being coupled to the negative input terminal. The ground terminal is coupled to the positive input terminal.

Resistive element array circuit, resistive element array circuit unit, and infrared sensor

A heat utilizing device is provided in which the thermal resistance of the wiring layer is increased while an increase in electric resistance of the wiring layer is limited. Heat utilizing device has thermistor whose electric resistance changes depending on temperature; and wiring layer that is connected to thermistor. A mean free path of phonons in wiring layer is smaller than a mean free path of phonons in an infinite medium that consists of a material of wiring layer.

Heat utilizing device

An electromagnetic wave sensor that limits the influence on bolometer membranes that is caused by heat from a local heat source is provided. Electromagnetic wave sensor has first substrate, second substrate that faces first substrate so as to form inner space between first substrate and second substrate, wherein second substrate transmits infrared rays; a plurality of bolometer membranes that is provided in inner space and that is supported by second substrate; local heat source that is formed in first substrate; first electric connection member that connects first substrate to second substrate; and lead that extends on or in second substrate and that connects first electric connection member to bolometer membrane.

A recording head has a near field light (NF light) generator generating NF light on a generator end surface that irradiates a magnetic recording (MR) medium; a main magnetic pole including a pole end surface facing an air bearing surface (ABS) that emits magnetic flux to the MR medium from the pole end surface; and a return shield having a shield end surface facing the ABS, that is magnetically linked with the main magnetic pole, and absorbs magnetic flux from the MR medium at the shield end surface. The pole end surface and the shield end surface are on the same side of the generator end surface in the down track direction, and are close to each other in the track crossing direction. A center line in the down track direction of the generator end surface extends between opposing sides of the pole end surface and the shield end surface.

Thermally assisted magnetic recording head with magnetic circuit parallel to substrate

A thermally assisted magnetic recording head has a generator end surface facing an air bearing surface (ABS), and includes: a near-field light (NF light) generator that generates an NF light on the generator end surface and irradiates a magnetic recording medium with the NF light, and a main magnetic pole end surface positioned in the vicinity of the generator end surface; a main magnetic pole that emits a magnetic flux from the main magnetic pole end surface to the magnetic recording medium and a shield end surface positioned in the vicinity of the generator end surface; and a return shield that is magnetically linked to the main magnetic pole, and that absorbs the magnetic flux returning from the magnetic recording medium at the shield end surface. The main magnetic pole and the return shield are positioned to be on the same side with respect to the NF light generator in the down track direction, and the NF light generator does not overlap with the main magnetic pole either in the down track direction or in the cross track direction.

Thermally assisted magnetic recording head with main magnetic pole apart from near field light generator

Thermally-assisted magnetic recording head, includes: a magnetic pole having an end exposed on an air-bearing surface; a waveguide; a plasmon generator having a first and second region, first region extending backward from the air-bearing surface to a first position, second region being coupled with the first region at the first position, extending backward from first position, and having a width in a track-width direction, and width in the track-width direction of second region being larger than a width in the track-width direction of first region; an adhesion layer having an end exposed on the air-bearing surface and a first adhesion region, the first adhesion region being in close contact with an end face in the track-width direction of first region; and a cladding layer located around plasmon generator and adhesion layer. Adhesion force between adhesion layer and plasmon generator is greater than adhesion force between cladding layer and plasmon generator.

Growing community of inventors

Tokyo, Japan

Susumu Aoki