Intel Corporation

Susmriti Das Mahapatra

Amitesh Saha

Bamidele Daniel Falola

Peng T Li

Mitul Bharat Modi

Sergio Antonio Chan Arguedas

Peng Li

Malavarayan Sankarasubramanian

Shenavia S Howell

John Harper

Embodiments may relate to a microelectronic package comprising that includes a solder thermal interface material (STIM). The STIM may include indium and a dopant material which may provide a number of benefits to the STIM. The STIM may physically and thermally couple a die and an integrated heat spreader (IHS). Other embodiments may be described or claimed.

Solder thermal interface material (STIM) with dopant

An integrated circuit (IC) package comprising a die having a front side and a back side. A solder thermal interface material (STIM) comprising a first metal is over the backside. The TIM has a thermal conductivity of not less than 40 W/mK; and a die backside material (DBM) comprising a second metal over the STIM, wherein the DBM has a CTE of not less than 18×10m/mK, wherein an interface between the STIM and the DBM comprises at least one intermetallic compound (IMC) of the first metal and the second metal.

Chip-scale package architectures containing a die back side metal and a solder thermal interface material

Disclosed herein are lids for integrated circuit (IC) packages with solder thermal interface materials (STIMs), as well as related methods and devices. For example, in some embodiments, an IC package may include a STIM between a die of the IC package and a lid of the IC package. The lid of the IC package may include nickel, the IC package may include an intermetallic compound (IMC) between the STIM and the nickel, and the lid may include an intermediate material between the nickel and the IMC.

Lids for integrated circuit packages with solder thermal interface materials

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Tempe, AZ, United States of America

Susmriti Das Mahapatra