Applied Materials, Inc.

Micro Materials Inc.

Other

Susmit Singha Roy

Abhijit Basu Mallick

Srinivas Gandikota

Kelvin Chan

Bhaskar Jyoti Bhuyan

Yihong Chen

Regina Germanie Freed

Takehito Koshizawa

Mark Joseph Saly

Pramit Manna

Huiyuan Wang

Mukund Srinivasan

Ziqing Duan

Madhur Sachan

Praburam Gopalraja

Rui Cheng

Thomas Knisley

Lakmal Charidu Kalutarage

Bo Qi

David Michael Thompson

Zeqing Shen

Yingli Rao

Nitin K Ingle

David P Thompson

Jeffrey W Anthis

Yixiong Yang

Eswaranand Venkatasubramanian

Sanjay S Natarajan

Tomohiko Kitajima

Steven C H Hung

Benjamin Schmiege

Uday Mitra

Gill Yong Lee

Sung-Kwan Kang

Yong Wu

Chang Seok Kang

Amrita B Mullick

Srinivas D Nemani

Karthik Janakiraman

John Leonard Sudijono

Xinliang Lu

Gaurav Thareja

Swaminathan T Srinivasan

Nikolaos Bekiaris

Sanjay G Kamath

Chia Cheng Chin

Jialiang Wang

Hien Minh Le

He Ren

Kwangduk Douglas Lee

Prashant Kumar Kulshreshtha

Wei V Tang

Jacqueline S Wrench

Ho-yung David Hwang

Shih Chung Chen

El Mehdi Bazizi

Yongjing Lin

Jiarui Wang

Aaron Dangerfield

Angada Bangalore Sachid

Xinke Wang

Chandan Das

Jiecong Tang

Zachary J Devereaux

Sushant Mittal

Yuriy Shusterman

Gabriela Alva

A method includes selectively forming at least one passivation layer on at least one first conductive layer disposed in a first interlevel dielectric (ILD) layer, selectively forming at least one catalyst layer on the at least one passivation layer, wherein the at least one passivation layer prevents formation of the at least one catalyst layer on the first conductive layer, and selectively forming at least one supplemental dielectric layer using the at least one catalyst layer. The at least one catalyst layer induces formation of the at least one supplemental dielectric layer, and the at least one supplemental dielectric layer includes a dielectric material having a dielectric constant of less than or equal to about 4.

Electronic device fabrication using area-selective deposition

Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.

Nucleation-free gap fill ALD process

Exemplary methods of semiconductor processing include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A flowrate ratio of the hydrogen-containing precursor to the carbon-containing precursor may be maintained greater than or about 2:1. The methods include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C.

Low temperature graphene growth

Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

Deposition of semiconductor integration films

A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal. The metal cap comprises one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to an anneal process, e.g., a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.

Metal based hydrogen barrier

Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material. A process for removal of germanium oxide is also disclosed.

Defect free germanium oxide gap fill

Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

Low temperature growth of transition metal chalcogenides

Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.

Vapor phase photoresists deposition

Methods for depositing a silicon-germanium film on a substrate are described. The method comprises exposing a substrate to a silicon precursor and a germanium precursor to form a conformal silicon-germanium film. The substrate comprises at least one film stack and at least one feature, the film stack comprising alternating layers of silicon and silicon-germanium. The silicon-germanium film has a conformality greater than 50%.

Conformal silicon-germanium film deposition

Methods for forming coating films comprising germanium oxide are disclosed. In some embodiments, the films are super-conformal to a feature on the surface of a substrate. The films are deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the super-conformal film.

Super-conformal germanium oxide films

Exemplary methods of semiconductor processing may include forming a layer of carbon-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The substrate may include an exposed region of a first dielectric material and an exposed region of a metal-containing material. The layer of carbon-containing material may be selectively formed over the exposed region of the metal-containing material. Forming the layer of carbon-containing material may include one or more cycles of providing a first molecular species that selectively couples with the metal-containing material. Forming the layer of carbon-containing material may include providing a second molecular species that selectively couples with the first molecular species. The methods may include selectively depositing a second dielectric material on the exposed region of the first dielectric material.

Selective patterning with molecular layer deposition

Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

Area selective carbon-based film deposition

Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. Subsequent a first period of time, the methods may include providing a germanium-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor and the germanium-containing precursor at a temperature greater than or about 400&#xb0; C. The methods may include forming a silicon-and-germanium-containing layer on the substrate.

Thermal deposition of silicon-germanium

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Sunnyvale, CA, United States of America

Susmit Singha Roy