Samsung Electronics Co., Ltd.

Suseong Noh

Jinwoo Lee

Hyunjae Song

Dongho Ahn

Doyoon Kim

Yumin Kim

Changyup Park

Myunghun Woo

Jooheon Kang

Donggeon Gu

A semiconductor device includes a lower structure, a stack structure including gate layers and interlayer insulating layers alternately stacked on the lower structure in a first direction, and a channel structure in a channel hole passing through the stack structure. The channel structure includes a variable resistance material layer in the channel hole, a data storage material layer between the variable resistance material layer and a sidewall of the channel hole, and a channel layer between the data storage material layer and the sidewall of the channel hole, the channel layer includes a first element, the variable resistance material layer includes a second element, different from the first element, oxygen, and oxygen vacancies, and the data storage material layer includes the first element, the second element, oxygen, and oxygen vacancies.

Semiconductor devices and data storage systems including the same

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Suwon-si, South Korea

Suseong Noh