Evident Technologies, Inc.

Susanthri Perera

Adam Z Peng

Clinton T Ballinger

Gregg Bosak

Dave Socha

Katie Fiske

Daniel P Landry

Margaret Hines

Luke Nally

Alfred Waring

Disclosed herein is a method of purifying and doping a population of semiconductor nanocrystals. The method includes mixing the population of semiconductor nanocrystals having a first material system and a first ligand with a set of particles in the presence of a first solvent, the set of particles having a second material system which is different from the first material system and a second ligand which is different from the first ligand, to form a mixture. The method also includes facilitating a ligand exchange and an ionic exchange in the mixture, altering the first material system of the population of semiconductor nanocrystals to a third material system, different from the first material system and the second material system. The method includes sonicating the mixture and isolating the population of semiconductor nanocrystals having the third material system and the second ligand from the mixture.

Purification of nanocrystals for thermoelectric, solar, and electronic applications

Disclosed are a thermoelectric material and a method of forming a thermoelectric material having an optimal stoichiometry, the method including obtaining a first precursor material, wherein the first precursor material is an antimony precursor, and obtaining a second precursor material, wherein the second precursor is chosen from the group consisting of a tellurium precursor and a selenium precursor. The method further includes combining the precursor materials, heating the combination of precursor materials, and isolating a plurality of semiconductor nanocrystals from the heated precursor materials.

[object Object]

Embodiments of the invention relate generally to creating semiconductor junctions with reduced contact resistance. In one embodiment, the invention provides a method of forming a composition of material, the method comprising: providing at least two populations of semiconducting materials; layering the at least two populations of semiconducting materials to form at least two layers; and consolidating the at least two populations of semiconducting materials, wherein the consolidating creates an electrical connection between the at least two layers.

Method for creating semiconductor junctions with reduced contact resistance

Herein disclosed is a method of forming a thermoelectric material having an optimized stoichiometry, the method comprising: reacting a precursor material including a population of nanocrystals with a first ionic solution and a second ionic solution to form a reacted mixture.

Method for a single precursor ionic exchange to prepare semiconductor nanocrystal n-type thermoelectric material

Disclosed herein is a method of synthesizing a nanocrystal. The method can include reacting a bismuth material, an antimony material, and a ligand together with a heat source. The method may also include injecting a sulfur precursor at a predetermined temperature and maintaining the predetermined temperature for a predetermined amount of time to form a plurality of precursor nanocrystals. The precursor nanocrystals may include BiSbSnanocrystals.

Preparation of nanocrystals for thermoelectric and solar cell applications using sulfide-based nanocrystal precursors in colloidal systems

Embodiments of the invention provide methods of forming photovoltaic or thermoelectric materials, including photovoltaic or thermoelectric films. In one embodiment, the invention provides a method of forming a photovoltaic material, the method comprising: depositing an inorganic capped nanoparticle solution onto a substrate; and heating the substrate.

Method of producing high performance photovoltaic and thermoelectric nanostructured bulk and thin films

A semiconductor nanocrystal composition comprising a Group V to VI semiconductor material and a method of making same. The method includes synthesizing a semiconductor nanocrystal core, where the synthesizing includes dissolving a Group V to VI anion gas in a first solvent to produce a Group V to VI anion precursor, preparing a cation precursor, and reacting the Group V to VI anion precursor with the cation precursor in the presence of a second solvent. The reacting may occur in a high pressure vessel.

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Cohoes, NY, United States of America

Susanthri Perera