Texas Instruments Corporation

Raytheon Company

Susan V Bagen

Donald Andrew Powell

Henry F Breit

James A Forster

Arthur M Wilson

Stephen R Nelson

Glen R Haas

Juanita G Miller

John E Barnett, Jr

Richard A Elder

Douglas J Darrow

An improved interconnect structure for electrically connecting an infrared detector to external circuitry wherein thin film metal conductors are deposited on a thin, insulating tape. One end of the structure terminates at the detector at about 77.degree. Kelvin, the other end terminating at external electronics at about 300.degree. Kelvin. Due to the small cross section of the conductor, heat leak to the detector is minimized. In addition, the carrier film is only 15 microns thick, thus minimizing outgassing material. The use of epoxies is eliminated. The structure can be fabricated in a variety of configurations using standard semiconductor equipment.

Thin film flexible interconnect for infrared detectors

In one form of the invention, a package for integrated circuits and devices (42), (46) is disclosed, the package including: a package base (44), the base having a first top surface; a layer of material (43) on the first top surface of the base (44) wherein the material (43) is patterned to cover a portion of the base, and wherein the layer of material (43) forms a substrate having a second top surface; a microstrip transmission line (45) on the second top surface; and a plastic encapsulant (50), wherein the encapsulant covers the first top surface of the base.

Package for integrated circuits

A method of forming an interconnect including the steps of providing a processing substrate, adhering a first electrically insulating layer to the substrate, forming an electrically conductive pattern on the first electrically insulating layer, forming a second electrically insulating layer adhered to the first electrically insulating layer with the electrically conductive pattern between the first and second electrically insulating layers, forming connections to the pattern and then removing the adhered first and second electrically insulating layers and the electrically conductive pattern from the substrate to provide a freestanding film.

Method of forming thin film flexible interconnect for infrared detectors

A flexible polyimide film is used to support an array of precisely located contact bumps which are used to probe die on a wafer of semiconductor circuits, or an unmounted integrated circuit die, several integrated circuits, or hybrid devices. By utilizing a standard I/O contact pattern for the flexible film and fabricating the membrane assembly of interconnects on an aluminum substrate, it is possible to produce a more reliable probe card, while reducing the fabrication time and costs for the probe card. The polyimide film must be selected to have a CTE of 3 to 5, which is only about 1/5 to 1/7 as great as the CTE of the aluminum substrate on which the film is formed. This produces a critical degree of compressive stress in the polyimide film, and a resulting 'bow' of the film when the central area of the aluminum is etched away.

Method for fabrication of probe card for testing of semiconductor devices

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Dallas, TX, United States of America

Susan V Bagen