Blackberry Corporation

Research in Motion Corporation

Paratek Microwave Incorporated

Susan Nagy

Marina Zelner

Mircea Capanu

Paul Bun Cheuk Woo

Andrew Vladimir Claude Cervin

Cervin-Lawry Andrew

James DiLorenzo

Miroea Capanu

A system that incorporates teachings of the subject disclosure may include, for example, a fabricated thin film capacitor formed by depositing a first dielectric layer on a first electrode layer utilizing a first process that is performed at a first temperature, depositing a second dielectric layer on the first dielectric layer utilizing a second process that forms a randomly-oriented grain structure for the second dielectric layer, depositing a third dielectric layer on the second dielectric layer utilizing a third process that is performed at a second temperature and that forms a columnar-oriented grain structure for the third dielectric layer where the second temperature is higher than the first temperature, and depositing a second electrode layer on the third dielectric layer to form the thin film capacitor. Other embodiments are disclosed.

Thin film dielectric stack

High-throughput deposition of a voltage-tunable dielectric material onto a substrate comprising a conductive electrode is provided. Respective gradients in at least two grain size defining parameters of the deposition are simultaneously provided, the respective gradients occurring for a first time period thereby producing a smoothly changing columnar crystalline habit of the voltage-tunable dielectric material. When the first time period has ended, the deposition continues for a second time period where the grain size defining parameters are held constant. In particular, the smoothly changing columnar crystalline habit of the voltage-tunable dielectric material is intentionally distorted by simultaneously providing the respective gradients in the in at least two grain size defining parameters of the deposition.

High-throughput deposition of a voltage-tunable dielectric material

Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.

Systems and methods for a thin film capacitor having a composite high-K thin film stack

An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.

Electronic component with reactive barrier and hermetic passivation layer

Systems and methods for a thin film capacitor having a composite high-k thin film stack

Growing community of inventors

Burlington, Canada

Susan Nagy