Raytheon Company

Susan M Eshelman

John Charles Ehmke

Charles L Goldsmith

Zhimin J Yao

Sankerlingam Rajendran

Thomas A Hanft

Douglas R Gentry

Monte R Sanchez

Integrating a semiconductor component with a substrate through a low loss interconnection formed through adaptive patterning includes forming a cavity in the substrate, placing the semiconductor component therein, filling a gap between the semiconductor component and substrate with a fill of same or similar dielectric constant as that of the substrate and adaptively patterning a low loss interconnection on the fill and extending between the contacts of the semiconductor component and the electrical traces on the substrate. The contacts and leads are located and adjoined using an adaptive patterning technique that places and forms a low loss radio frequency transmission line that compensates for any misalignment between the semiconductor component contacts and the substrate leads.

Heterogeneous chip integration with low loss interconnection through adaptive patterning

A switch includes a conductive region, a membrane, and a dielectric region. The dielectric region is formed from a dielectric material and is disposed between the membrane and the conductive region. When a sufficient voltage is applied between the conductive region and the membrane, a capacitive coupling between the membrane and the conductive region is effected. The dielectric material has a resistivity sufficiently low to inhibit charge accumulation in the dielectric region during operation of the switch.

Method and apparatus for switching high frequency signals

Growing community of inventors

Plano, TX, United States of America

Susan M Eshelman