USA As Represented by Secretary of the Navy

Susan L Brandow

Walter J Dressick

Elizabeth Ann Dobisz

Mu-San Chen

Jeffrey M Calvert

Charles S Dulcey

Walter M Dressick

This invention discloses an anti-charging layer for beam lithography and mask fabrication. This invention reduces beam displacement and increases pattern placement accuracy. The process will be used in the beam fabrication of high-resolution lithographic masks as well as beam direct write lithography of electronic devices. The anti-charging layer is formed by the use of metal films bound to metal ligating self-assembled monolayers (SAMs) as discharge layers.

Anti-charging layer for beam lithography and mask fabrication

An aspect of the present invention is a process for modifying a substrate in areas that are exposed to actinic radiation, having the steps: (a) providing on the substrate functional groups adapted for conversion to oxygen-containing photoproducts upon exposure to actinic radiation; (b) exposing at least a portion of the substrate to the actinic radiation, converting the functional groups in an exposed region of the substrate to the photoproducts; (c) contacting the photoproducts with a primary or secondary amine in the presence of hydrogen ions, forming imine groups; and (d) contacting the imine groups with a reducing agent, forming amine groups on the substrate in the exposed region. Another aspect of the present invention is a process for modifying a substrate in areas that are unexposed to actinic radiation, having the steps: (a) providing on the substrate aryl functional groups adapted for conversion to oxygen-containing photoproducts upon exposure to actinic radiation; (b) exposing a portion of the substrate to the actinic radiation, converting the aryl functional groups in an exposed region of the substrate to the photoproducts, and not converting the aryl functional groups in an unexposed region of the substrate to the photoproducts; (c) contacting the aryl functional groups in the unexposed region of the substrate with a compound adapted for physisorption to the aryl functional groups, preferentially physisorbing the compound onto the substrate in the unexposed regions.

Methods and materials for selective modification of photopatterned polymer films

Growing community of inventors

Springdale, MD, United States of America

Susan L Brandow