Fed Corporation

Other

Emagin Corporation

Microelectronics Center of North Carolina

Susan K Schwartz Jones

Gary W Jones

Steven M Zimmerman

Jeffrey A Silvernail

Amalkumar P Ghosh

Yachin Liu

Michael J Costa

Gary Wayne Jones

Apparatus and methods to enhance light intensity within useful red to near-infrared spectral ranges, using direct or indirect sunlight, or from other ambient white light, are described. The disclosed devices provide high quantum yield photoluminescent ambient light spectrum conversion to increase the supplied energy primarily in the 590 nm-850 nm spectral range. These devices also pass much of the incident light in the spectral range in which the device's photoluminescent materials emit light, thereby greatly increasing the effective intensity of light available in the targeted 590-850 nm wavelength range. The ambient light conversion devices of the disclosure may be incorporated in apparel, bandage-like patches, converting reflectors, large area converters, awnings, window covers, and other articles, materials, and products. The converted light may be used in therapeutic treatments, horticultural and biotechnological applications, and other applications in which the converted light outputs of the present disclosure are beneficial.

Ambient spectrum light conversion device

An interferometric lithographic apparatus includes an arrangement for applying interfering laser beams to a part for producing a first interference pattern. The first interference pattern has a first fringe spacing. A mobile part holder stage is repositioned to change the interference pattern and produce a second fringe spacing. A control arrangement, automatically responsive to the repositioning of the part holder, re-aligns optical paths and optimally interferes the laser beams to produce the second fringe spacing.

Laser interferometric lithographic system providing automatic change of

A field emitter device formed by a veil process wherein a protective layer comprising a release layer is deposited on the gate electrode layer for the device, with the protective layer overlying the circumscribing peripheral edge of the opening of the gate electrode layer, to protect the edge of the gate electrode layer during etching of the field emitter cavity in the dielectric material layer on a substrate, and during the formation of a field emitter element in the cavity by depositing a field emitter material through the opening. The protective layer is readily removed subsequent to completion of the cavity etching and emitter formation steps, to yield the field emitter device. Also disclosed are various planarizing structures and methods, and current limiter compositions permitting high efficiency emission of electrons from the field emitter elements at low turn-on voltages.

Field emitter device, and veil process for the fabrication thereof

A microelectronic field emitter device comprising a substrate, a conductive pedestal on said substrate, and an edge emitter electrode on said pedestal, wherein the edge emitter electrode comprises an emitter cap layer having an edge. The invention also contemplates a current limiter for a microelectronic field emitter device, which comprises a semi-insulating material selected from the group consisting of SiO, SiO+Cr (0 to 50% wt.), SiO2+Cr (0 to 50% wt.), SiO+Nb, Al2O3 and SixOyNz sandwiched between an electron injector and a hole injector. Another aspect of the invention relates to a microelectronic field emitter device comprising a substrate, an emitter conductor on such substrate, and a current limiter stack formed on said substrate, such stack having a top and at least one edge, a resistive strap on top of the stack, extending over the edge in electrical contact with the emitter conductor; and an emitter electrode on the current limiter stack over the resistive strap.

Pedestal edge emitter and non-linear current limiters for field emitter

A planarization method for use during manufacture of a microelectronic field emitter device, comprising applying a glass frit slurry including glass particles in a removable base, and subsequently baking to liquify the frit. The invention relates in another aspect to a method of making a microelectronic field emitter device, comprising the steps of: applying a patterned layer of liftoff profile resist over a substrate to define emitter conductor locations; employing the patterned resist layer to form trenches in the substrate at the emitter conductor locations; depositing emitter conductor metal in the trenches and over the patterned resist layer; removing the patterned resist layer; depositing a current limiter layer over the conductors and substrate areas between trenches; depositing a layer of emitter material; pattern masking and etching the layer of emitter material to form emitter structures; depositing gate dielectric; applying a patterned layer of liftoff profile resist over the gate dielectric; evaporating gate metal; and removing the patterned resist layer to define gate electrodes.

Planarizing process for field emitter displays and other electron source

An array wand for charged particle beam shaping and control applications can selectively and accurately shape or deflect single or multiple beams of charged particles so as to delineate a desired pattern in a substrate. The wand preferably takes the form of a monolithic block of material, for example semiconductor material, having one or more cavities etched through it which serve to form a collimated beam of particles. The array wand employs an Einsel lens structure which contains electrostatic electrodes for precise focusing of the beams of charged particles. The Einsel lens includes successive layers on the monolithic substrate which simultaneously act as a lens, an aperture, and a beam line for beams of charged particles. The array wand may be manufactured, in large quantity with precision, and may be employed to form small focused beams. An important application of the array wand is in microlithography where small precision beams of charged particles are used to write circuit patterns on various circuit substrates. A monolithic ion source may be formed separate from the array wand or, in one embodiment, may be formed in combination with the array wand in monolithic form. The ion source has utility as a source of ions apart from its utilization in a wand optics column.

Growing community of inventors

Poughkeepsie, NY, United States of America

Susan K Schwartz Jones