Newport Fab, LLC

Conexant Systems, Inc.

Suryanarayana Shivakumar Bhattacharya

Aniruddha B Joshi

Li-Ming Hwang

Sandeep D'Souza

Kevin Q Yin

Xiaoming Li

Umesh Sharma

Hong J Wu

An anti-reflective coating for use in the fabrication of a semiconductor device includes a thin oxide layer and an overlying layer of silicon oxynitride. The anti-reflective layer is advantageously used in the fabrication of FLASH memory devices which include a layer of polycrystalline silicon and an underlying layer of silicon nitride. After being used to pattern the polycrystalline silicon and silicon nitride, the anti-reflective coating is removed in a solution of hot phosphoric acid with the removal taking place before the silicon oxynitride is exposed to any elevated temperatures.

Anti-reflective coating and process using an anti-reflective coating

An improved gate structure for a MOSFET device exhibits a reduced level of 1/f noise or &ldquo;flicker noise&rdquo;, while maintaining the control of boron penetration into the substrate of the MOSFET device. The gate structure for the MOSFET device includes a gate electrode and a gate oxide layer wherein nitrogen is selectively implanted into the gate oxide/device substrate interface prior to oxidation of the gate oxide layer. The nitrogen is selectively implanted so that the nitrogen is implanted into thin gate oxide regions and masked from thick gate oxide regions so that the benefits of controlling the boron penetration are realized while the 1/f noise is reduced due to the selective implantation of the nitrogen.

Reduced 1/f noise in MOSFETs

Technique for reducing 1/f noise in MOSFETs

Growing community of inventors

Irvine, CA, United States of America

Suryanarayana Shivakumar Bhattacharya