International Business Machines Corporation

Suresh Gundapaneni

Edward J Nowak

Mohit Bajaj

Kota V R M Murali

Aniruddha Konar

Narasimha R Mavilla

The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VOregion.

Symmetric tunnel field effect transistor

Embodiments of the present disclosure provide an integrated circuit (IC) structure, which can include: a doped semiconductor layer having a substantially uniform doping profile; a first gate structure positioned on the doped semiconductor layer; and a second gate structure positioned on the doped semiconductor layer, the second gate structure including a metal-insulator transition material and a gate dielectric layer separating the metal-insulator transition material from the doped semiconductor layer.

Junctionless tunnel FET with metal-insulator transition material

Junctionless tunnel fet with metal-insulator transition material

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Vijayawada, India

Suresh Gundapaneni