International Business Machines Corporation

Surbhi Mittal

Chih-Chao Yang

Chao-Kun Hu

Lynne Marie Gignac

A method of fabricating an interconnect structure is provided which includes providing a dielectric material having a dielectric constant of about 3.0 or less and at least one conductive material embedded therein, the at least one conductive material has an upper surface that is coplanar with an upper surface of the dielectric material; and forming a noble metal-containing cap directly on the upper surface of the at least one conductive material, wherein the noble metal cap is discontinuous or non-uniform.

Discontinuous/non-uniform metal cap structure and process for interconnect integration

An interconnect structure including a noble metal-containing cap that is present at least on some portion of an upper surface of at least one conductive material that is embedded within an interconnect dielectric material is provided. In one embodiment, the noble metal-containing cap is discontinuous, e.g., exists as nuclei or islands on the surface of the at least one conductive material. In another embodiment, the noble metal-containing cap has a non-uniform thickness across the surface of the at least one conductive material.

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West Orange, NJ, United States of America

Surbhi Mittal