Yieldup International

Nano Om, LLC

Scd Mountain View, Inc.

Fsi International, Inc.

Nano Green Technology, Inc.

Other

Cypress Semiconductor Corporation

Suraj Puri

Raj Mohindra

Rajiv Bhushan

Abhay K Bhushan

Jeffrey Nowell

John H Anderson, Sr

David C Wong

Ariel Flat

Joseph Medeiros, Jr

Krishnaswamy Ramkumar

Hanna Bamnolker

Kaichiu Wong

David Scott Becker

Natraj Narayanswami

John H Anderson Sr

Gary Elmore

A process for evaluating a cleaning solution is described. The process includes: (a) subjecting a solution, including a solute and a solvent, to sonic energy to create a sonicated solution; (b) measuring UV absorption of the sonicated solution to produce a sample UV absorbance spectra; (c) obtaining a reference UV absorbance spectra; (d) scaling the reference UV absorbance spectra to the sample UV absorbance spectra at a lower range of the UV spectrum; (e) subtracting from the reference UV absorbance spectra the sample UV absorbance spectra to produce a differential UV spectra; and (f) evaluating at or near a peak of the sample UV absorbance spectra the differential UV absorbance spectra to determine whether the sonicated solution is activated.

Evaluating a cleaning solution using UV absorbance

Inventive methods, systems and compositions of cleaning integrated circuit ('IC') substrates are described. The cleaning methods of the present invention include: charging a solution, which contains at least a solute selected to promote cleaning of the IC substrate, to produce a charged solution, such that at least a portion of the solute is present as clusters in the charged solution; and conveying the charged solution for cleaning the IC substrate. The cleaning systems of the present invention include: a charging chamber for holding a solution, which contains at least a solute selected to promote cleaning of the integrated circuit substrate; and a first acoustic energy source capable of vibrating the solution in the charging chamber to produce a charged solution such that at least a portion of the solute is present as clusters in the charged solution. The cleaning compositions of the present invention include: a solvent; and a solute selected to promote cleaning of the IC substrate, wherein at least a portion of the solute is present in cluster form in the solution and the solute and solvent are present in a volumetric ratio that is between about 3&#xd7;10:1 and about 1&#xd7;10:1.

Systems and methods for charging a cleaning solution used for cleaning integrated circuit substrates

Inventive methods and systems of cleaning patterned integrated circuit ('IC') substrates are described. The cleaning methods of the present invention include: (1) providing the patterned integrated circuit substrate having thereon poly silicon lines adjacent to each other; (2) charging a solution, which contains at least a solute selected to promote cleaning of the patterned integrated circuit substrate, to produce a charged solution, wherein at least a portion of the solute is present as clusters in the charged solution; and (3) conveying the charged solution for cleaning the patterned integrated circuit substrate.

Systems and methods for single integrated substrate cleaning and rinsing

A process for evaluating a cleaning solution is described. The process includes: (i) subjecting a solution, including a solute and a solvent, to sonic energy to create a sonicated solution; (ii) measuring UV absorption of the sonicated solution to produce a sample UV absorbance spectra; (iii) obtaining a reference solution, which includes a solute concentration that is similar to that of solute concentration in the sonicated solution; (iv) measuring UV absorption of the reference solution to produce a reference UV absorbance spectra; (v) scaling the reference UV absorbance spectra to the sample UV absorbance spectra at a lower range of the UV spectrum; (vi) subtracting from the reference UV absorbance spectra the sample UV absorbance spectra to produce a differential UV spectra; and (vii) evaluating at or near a peak of the sample UV absorbance spectra the differential UV absorbance spectra to determine whether the sonicated solution is activated.

Inventive methods, systems and compositions of cleaning integrated circuit ('IC') substrates are described. The cleaning methods of the present invention include: charging a solution, which contains at least a solute selected to promote cleaning of the IC substrate, to produce a charged solution, such that at least a portion of the solute is present as clusters in the charged solution; and conveying the charged solution for cleaning the IC substrate.

A method of cleaning a surface of an article using cleaning liquids in combination with acoustic energy. Preferably, an ultradilute concentration of a cleaning enhancement substance, such as ammonia gas, is dissolved in a liquid solvent, such as filtered deionized water, to form a cleaning liquid. The cleaning liquid is caused to contact the surface to be cleaned. Acoustic energy is applied to the liquid during such contact. Optionally, the surface to be cleaned can be oxidized, e.g., by ozonated water, prior to cleaning.

Methods for cleaning microelectronic substrates using ultradilute cleaning liquids

A method ( ) for cleaning a semiconductor wafer. The method includes immersing ( ) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step ( ) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

Ultra-low particle semiconductor cleaner

The invention relates to a wafer rinsing system for rinsing chemicals and particles off of wafers without introducing contaminants. The system reduces the particle count on wafers by filtering the water and the gas used during rinsing at the wet bench. The system includes a rinsing unit, a local water filter bank, a local gas filtering system, an H,O,injection unit, an auxiliary chemical injection unit, and a controller for operating the other components. The water filter bank provides a multiple stage filtering system to eliminate particles without a substantial drop in water pressure. The H,O,injection unit provides a local source of H,O,to clean the filter and rinser and to provide a mechanism for controlling the formation of native oxide on the wafer during rinsing. The auxiliary chemical injection unit provides a chemical additive to the rinsing unit to enhance the wafer cleaning process. The gas filtering system provides clean gas to the rinsing unit and to the injection units. The clean gas provides a clean atmosphere over the chemicals in each injection unit, and over the water in the rinser.

Apparatus for delivering ultra-low particle counts in semiconductor manufacturing

A method for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

A method for cleaning an object. The method (400) includes immersing (420) an object in a liquid comprising water, which can be ultra-clean. The object has a front face, a back face, and an edge. The method includes providing (450) a cleaning enhancement substance (e.g., trace amount of polar organic compound, surfactant, ammonia bearing compound) into the liquid. In one embodiment, the cleaning enhancement substance can form a liquid film, such as a monolayer overlying an upper surface or level of the liquid. The method also includes providing a substantially particle free environment (e.g., ultra-clean gas, ultra-clean non-reactive gas) adjacent to the front face and the back face of the object as the liquid including the cleaning enhancement substance is being removed.

Method for cleaning objects using a fluid charge

A method is described for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance also is included. It is believed that the cleaning enhancement substance dopes any liquid adhered to the front and back faces of the wafer to cause a concentration gradient of the cleaning enhancement substance in the liquid and accelerate removal of the adhered liquid off of the water.

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Los Altos, CA, United States of America

Suraj Puri