Intel Corporation

Supanee Sukrittanon

Jack T Kavalieros

Gilbert W Dewey

Willy Rachmady

Cheng-Ying Huang

Aravind S Killampalli

Jay P Gupta

Byungki Jung

Prashant Wadhwa

Nishant Gupta

Kaiwen Hsu

Justin Railsback

Caleb Barrett

Transistor structures including a non-planar body that has an active portion comprising a semiconductor material of a first height that is variable, and an inactive portion comprising an oxide of the semiconductor material of a second variable height, complementary to the first height. Gate electrodes and source/drain terminals may be coupled through a transistor channel having any width that varies according to the first height. Oxidation of a semiconductor material may be selectively catalyzed to convert a desired portion of a non-planar body into the oxide of the semiconductor material. Oxidation may be enhanced through the application of a catalyst, such as one comprising metal and oxygen, for example.

Transistor structures including a non-planar body having variable and complementary semiconductor and insulator portions

Growing community of inventors

North Plains, OR, United States of America

Supanee Sukrittanon