Samsung Electronics Co., Ltd.

Sunyoung Lim

Jaegon Lee

A method is for operating a nonvolatile dual in-line memory module (NVDIMM). The NVDIMM includes a dynamic random access memory (DRAM) and a nonvolatile memory (NVM) device, the DRAM including a first input/output (I/O) port and a second I/O port, and the second I/O port connected to the NVM device. The method includes receiving an externally supplied command signal denoting a read/write command and a transfer mode, driving a multiplexer to select at least one of the first and second I/O ports according to the transfer mode of the command signal, and reading or writing data according to the read/write command of the command signal in at least one of the DRAM and NVM device using the at least one of the first and second I/O ports selected by driving the multiplexer.

Memory device, method of operating the memory device, memory module, and method of operating the memory module

Provided are a non-volatile dual inline memory module (NVDIMM) supporting a DRAM cache mode and an operation method of the NVDIMM. The NVDIMM includes a DRAM chip, an NVM chip, and a controller that controls the DRAM chip to operate as a cache memory of the NVM chip. The controller sends a read command to the DRAM chip with reference to a cache address of data requested to be written from a host to the NVM chip, and sends a write command to the NVM chip with reference to an address of the data requested to be written at a time point when a read latency (RL) of the DRAM chip and a write latency (WL) of the NVM chip coincide with each other.

Growing community of inventors

Suwon-si, South Korea

Sunyoung Lim