Skhynix Inc.

Korea Advanced Institute of Science and Technology

Sunyoung Jo

Jaekyun Moon

Sang Ho Yun

Younghyun Park

Jungwuk Park

A device includes a threshold voltage distribution estimation network configured to generate an estimated distribution using a feature distribution and read trial information, a set of feature distributions generated from a plurality of threshold voltage distributions for a plurality of pages of a memory device, and a read reference voltage estimation network configured to generate a read reference voltage from the estimated distribution. The read trial information includes a read trial vector and an output value, the output value being generated by applying the read trial vector to a threshold voltage distribution for a page to be read among the plurality of threshold voltage distributions.

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Daejeon, South Korea

Sunyoung Jo