Samsung Electronics Co., Ltd.

Sunyool Kang

Yunhwan Jung

Jaehong Kim

Heesung Chae

Haesick Sul

Yunhong Kim

Yongjun Cho

Kyungmin Kim

Kyung-Min Kim

Seungjin Lee

Hyeokjong Lee

KyoungMin Koh

Sukki Yoon

Hyeonji Lee

Jaeyoung Bae

Suyong Kim

Seungmin Suh

Ingyeong Shin

Kyungtae Kim

Seokyong Hong

An image sensor includes a pixel array that includes a first pixel group located in a first row and including a first select transistor and a first floating diffusion region, a second pixel group located in a second row and including a second select transistor and a second floating diffusion region, and a column line connected to both the first pixel group and the second pixel group. While charges generated by a photoelectric conversion element of the first pixel group are transferred to the first floating diffusion region, the first select transistor is turned off, the second select transistor is turned on, and a first voltage is applied to the column line through the second select transistor. A photoelectric conversion element of the second pixel group generates charges prior to the photoelectric conversion element of the first pixel group, so as to be transferred to the second floating diffusion region.

Image processing device for controlling pixel output level and operating method thereof

Disclosed is a bandgap reference circuit, which includes a first current generator that generates a first current proportional to a temperature, a second current generator that outputs a second current obtained by mirroring the first current to a first node at which a reference voltage is formed, a first resistor that is connected with the first node and is supplied with the second current, and a first bipolar junction transistor (BJT) that includes an emitter node connected with the first resistor, a base node supplied with a first power, and a collector node supplied with a second power different from the first power.

Bandgap reference circuit using heterogeneous power and electronic device having the same

Provided are analog-digital converting circuits including a comparator, and an image sensor. The analog-digital converting circuit include a counter and a comparator, the comparator including a first P-type transistor including a gate connected to a first input node of the comparator, a second P-type transistor including a gate connected to a second input node of the comparator, a first N-type transistor including a gate connected to the first input node and a drain connected to the first P-type transistor, a second N-type transistor including a gate connected to the second input node and a drain connected to the second P-type transistor, and a transistor including a gate connected to the drain of the first N-type transistor and a source to which ground voltage or power supply voltage is applied.

Analog-digital converting circuit including comparator, and image sensor including the analog-digital converting circuit

Disclosed is an image sensor device which includes an image pixel that outputs a reset voltage and a first data voltage through a data line, and a voltage hold circuit that is connected with the data line, stores a first voltage based on the reset voltage, and provides the data line with a second voltage based on the first voltage.

Image sensor device and operation method thereof

An image sensor includes a pixel configured to operate in a high conversion gain (HCG) mode and a low conversion gain (LCG) mode during a readout period, and a correlated double sampling (CDS) circuit configured to generate a comparison signal based on a ramp signal and a pixel voltage received from the pixel, wherein the CDS circuit includes a comparator configured to: receive the pixel voltage through a first input node, receive the ramp signal through a second input node based on an LCG reset signal or an LCG image signal being received as the pixel voltage, and receive the ramp signal through a third input node based on an HCG reset signal or an HCG image signal being received as the pixel voltage; and compare the ramp signal to the pixel voltage, and output the comparison signal corresponding to a comparison result.

Image sensor with high conversion gain (HCG) mode and low conversion gain (LCG) mode

An image sensor includes a first amplifier comparing and amplifying a first voltage signal received from a first column line, and a ramp signal; a second amplifier amplifying an output of the first amplifier; a third amplifier comparing and amplifying a second voltage signal received from a second column line, and the ramp signal; and a fourth amplifier amplifying an output of the third amplifier, wherein the second amplifier and the fourth amplifier output a decision signal at different points in time by dummy switch control split.

Image sensor, image device having the same, and operating method thereof

Bandgap reference circuit using heterogeneous power and electronic device having ihe same

An image sensor, including a pixel array including a plurality of pixels connected to row lines extending in a first direction and column lines extending in a second direction intersecting the first direction; a ramp voltage generator configured to output a ramp voltage; a sampling circuit including a plurality of comparators, each comparator of the plurality of comparators having a first input terminal connected to a column of the column lines and a second input terminal configured to receive the ramp voltage; and an analog-to-digital converter configured to convert an output of the plurality of comparators to a digital signal, wherein the plurality of comparators include a first comparator connected to a first column line, and a second comparator connected to a second column line adjacent to the first column line in the first direction, wherein each of the first comparator and the second comparator includes a first transistor and a second transistor disposed sequentially in the second direction, and wherein a gap between the first transistor of the first comparator and the second transistor of the first comparator is different from a gap between the first transistor of the second comparator and the second transistor of the second comparator.

Image sensor having reduced parasitic capacitance

A comparison circuit that includes an input sampling capacitor and an image sensor including the same are provided. The comparison circuit includes an amplifier configured to receive a pixel signal and a ramp signal to perform a correlated double sampling operation, a first pixel capacitor connected to the amplifier through a first floating node and configured to transmit the pixel signal, a first ramp capacitor connected to the amplifier through a second floating node and configured to transmit the ramp signal, a second pixel capacitor connected in parallel to the first pixel capacitor, and a second ramp capacitor connected in parallel to the first ramp capacitor, wherein the second pixel capacitor is formed between the first floating node and first peripheral routing lines, and the second ramp capacitor is formed between the second floating node and second peripheral routing lines.

Comparison circuit including input sampling capacitor and image sensor including the same

An electronic circuit is provided. The electronic circuit includes a first current generating circuit configured to output a first operating current based on a first operating voltage; and an input circuit configured to: receive a first current corresponding to a first input voltage and a second current corresponding to a second input voltage, wherein the first current and the second current are based on the first operating current; receive a third current and a fourth current that are generated based on the first operating voltage; and generate a fifth current corresponding to the second input voltage based on a second operating current. The electronic circuit is configured to generate an output voltage that is associated with a difference between the first input voltage and the second input voltage based on the second current, the fourth current and the fifth current, and the fourth current corresponds to the third current.

Electronic circuit for configuring amplifying circuit configured to output voltage including low noise

An image sensor includes a pixel array including a plurality of pixels connected to row lines extending in a first direction and to column lines extending in a second direction intersecting the first direction, a ramp voltage generator configured to output a ramp voltage, a plurality of comparators, each of the plurality of comparators including a first input terminal to which the ramp voltage is input, and a second input terminal connected to one of the column lines, and a replica circuit having a same structure as a structure of a portion of the comparators. Each of the comparators includes a plurality of transistors, a first auto-zero transistor connected to the first input terminal, a second auto-zero transistor connected to the second input terminal, and wirings connected to the plurality of transistors, the first auto-zero transistor, and the second auto-zero transistor.

Image sensor

A comparing circuit may include a first amplifier and a second amplifier. The first amplifier performs a correlated double sampling operation in response to a pixel signal and a ramp signal, and the second amplifier amplifies an output signal of the first amplifier. The second amplifier includes a current stabilization circuit that supplies current to the second amplifier during the correlated double sampling operation irrespective of the output signal of the first amplifier.

Growing community of inventors

Iksan-si, South Korea

Sunyool Kang