Samsung Electronics Co., Ltd.

Puresphere Co., Ltd.

Sunwoo Yook

Suji Gim

Jongyong Bae

Seoyoung Maeng

Jungjoon Pyeon

Youngseok Roh

Jihnkoo Lee

Jongha Hwang

Youngduk Ko

Jaehyun Kim

Young Su Heo

Taijong Sung

Kookjin Ann

An exhaust gas processing apparatus includes a first chamber and a second chamber in parallel between a processing chamber and an exhaust pump, at least one foreline connecting the first chamber and the second chamber to the processing chamber and the exhaust pump, a first plasma source connected to the first chamber and the second chamber, and a second plasma source connected to the first chamber and the second chamber, wherein the first plasma source generates a first treatment material, and the second plasma source generates a second treatment material, different from the first treatment material.

Exhaust gas processing apparatus having plasma source and substrate processing apparatus including the same

An exhaust gas processing system including a process chamber in which an exhaust gas is produced; an exhaust gas measurer receiving the exhaust gas and measuring a concentration of the exhaust gas; a solid producing gas processor receiving the exhaust gas and removing a solid producing gas contained in the exhaust gas; a gas supply supplying dilution and cooling gases to the solid producing gas processor; a processed gas measurer receiving, as a processed gas, the exhaust gas free of the solid producing gas and measuring a temperature of the processed gas and ingredients of the processed gas; and a controller receiving results of measurement of the concentration of the exhaust gas from the exhaust gas measurer and results of measurement of the temperature of the processed gas and the ingredients of the processed gas from the exhaust gas measurer and controlling the gas supply based on the measurement results.

Exhaust gas processing system including adsorbent for suppressing powder-like byproduct

An apparatus and method for treating a semiconductor process gas comprises a gas inlet allowing a treatment target gas (or gas to be treated) to flow therethrough; a catalytic reaction portion including a catalyst and configured to allow the treatment target gas to be brought into contact with the catalyst; a space velocity controller between the gas inlet and the catalytic reaction portion, the space velocity controller extending from the gas inlet in a diagonal direction in relation to the gas inlet; a differential pressure buffer portion between the space velocity controller and the catalytic reaction portion and including a filter; and a gas outlet configured to externally discharge a product formed as the treatment target gas comes into contact with the catalyst.

Apparatus for treating semiconductor process gas and method of treating semiconductor process gas

Growing community of inventors

Seoul, South Korea

Sunwoo Yook