Samsung Electronics Co., Ltd.

Sunwoo Park

Heegeun Jeong

Junho Yoon

Seunghun Shin

Juhyung Lee

Kyoungwhan Oh

Jaejune Jang

Minwoo Rhee

Chungho Song

Hyunjin Lee

Dukseo Park

Jungwoo Cho

Howoo Park

Seungdon Lee

Sujie Kang

Jungshin Lee

A 3D printing apparatus includes a substrate stage configured to support a substrate, a droplet ejector including at least one droplet nozzle configured to discharge a photo-curable droplet on the substrate, a first photo curing unit configured to irradiate light to a drop path along which the droplet discharged from the droplet nozzle falls to change a viscosity of the droplet, and a second photo curing unit configured to irradiate light onto the droplet that has landed on the substrate to cure the droplet.

3D printing apparatus and 3D printing method

A decoupling capacitor includes a first insulating layer extending in a horizontal direction, a storage plate arranged on the first insulating layer, a top plate facing the storage plate, a second insulating layer interposed between the storage plate and the top plate and having a plurality of through holes, a capacitor block including a plurality of capacitor structures in the plurality of through holes, a wiring structure covering the top plate, a first conductive pad arranged on the wiring structure and configured to be electrically connected to the storage plate through a first conductive path of the wiring structure, and a second conductive pad spaced apart from the first conductive pad in the horizontal direction in the same plane as the first conductive pad and configured to be electrically connected to the top plate through a second conductive path of the wiring structure.

Discrete decoupling capacitor and integrated circuit chip package including same

An image sensor includes a substrate, a shallow trench isolation layer, a first deep trench isolation layer, and a second deep trench isolation layer. The substrate includes a first surface, a second surface opposing the first surface, and a plurality of unit pixel regions. The shallow trench isolation layer is adjacent to the first surface. The first deep trench isolation layer is adjacent to the shallow trench isolation layer and extends toward the second surface in the substrate. The second deep trench isolation layer is adjacent to the second surface and vertically overlaps the first deep trench isolation layer. The first and second deep trench isolation layers isolate the unit pixel regions from each other.

Image sensor and method of fabricating the same

Growing community of inventors

Suwon-si, South Korea

Sunwoo Park