Infineon Technologies Ag

Sunoo Kim

Moosung Chae

Bum Ki Moon

Erdem Kaltalioglu

Danny Pak-Chum Shum

Jiang Yan

Henning Haffner

Richard Lindsay

Klaus Schruefer

Frank Huebinger

Muhammed Shafi Pallachalil

In one embodiment, a semiconductor device includes a first metal line disposed in a first metal level above a substrate. A second metal line is disposed in a second metal level disposed over the first metal level. A third metal line is disposed in a third metal level disposed over the second metal level. A through level via contacts the first metal line and the third metal line.

Through level vias and methods of formation thereof

A preferred embodiment includes a method of manufacturing a fuse element that includes forming a polysilicon layer over a semiconductor structure, doping the polysilicon layer with carbon or nitrogen, depositing a metal over the polysilicon layer; and annealing the metal and polysilicon layer to form a silicide in an upper portion of the polysilicon layer.

Silicided semiconductor structure and method of forming the same

An electro chemical deposition system is described for forming a feature on a semiconductor wafer. The electro chemical deposition is performed by powering electrodes that includes a cathode, an anode and a plurality of electrically independent auxiliary electrodes.

Electro chemical deposition systems and methods of manufacturing using the same

In one embodiment, a capacitor includes a first via level having first metal bars and first vias, such that the first metal bars are coupled to a first potential node. The first metal bars are longer than the first vias. Second metal bars and second vias are disposed in a second via level, the second metal bars are coupled to the first potential node. The second metal bars are longer than the second vias. The second via level is above the first via level and the first metal bars are parallel to the second metal bars. Each of the first metal bars has a first end, an opposite second end, and a middle portion between the first and the second ends. Each of the middle portions of the first metal bars and the second ends of the first metal bars do not contact any metal line.

Capacitors in integrated circuits and methods of fabrication thereof

Growing community of inventors

Hopewell Junction, NY, United States of America

Sunoo Kim